The HSMP-382x series is optimized for switching applications where ultra-low resistance is required. The
HSMP-482x diode is ideal for limiting and low inductance switching applications up to 1.5 GHz.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic, carrier
lifetime.
Package Lead Code Identication, SOT-23 (Top View)
Features
• Diodes Optimized for:
Low Current Switching
Low Distortion Attenuating
• Power Limiting/Circuit Protection
• Surface Mount SOT-23 and SOT-323 Packages
Single and Dual Versions
Tape and Reel Options Available
• Low Failure in Time (FIT) Rate
[1]
• Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability
Data Sheet.
Package Lead Code Identication, SOT-323 (Top View)
Page 2
Absolute Maximum Ratings
[1]
TC = +25°C
Symbol Parameter Unit SOT-23 SOT-323
If Forward Current (1 µs Pulse) Amp 1 1
PIV Peak Inverse Voltage V 50
50
Tj Junction Temperature °C 150 150
T
Storage Temperature °C -65 to 150 -65 to 150
stg
θjc Thermal Resistance
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is dened to be the temperature at the package pins where contact is
made to the circuit board.
[2]
°C/W 500 150
Electrical Specications TC = 25°C
Package Minimum Maximum Maximum
Part Number Marking Lead Breakdown Series Resistance Total Capacitance
HSMP- Code Code Conguration Voltage VBR (V) RS (Ω) CT (pF)
3820 F0 0 Single 50 0.6 0.8
3822 F2 2 Series
3823 F3 3 Common Anode
3824 F4 4 Common Cathode
Test Conditions VR = V
BR
Measure IF = 10 mA VR = 20 V
IR ≤ 10 µA
f = 100 MHz f = 1 MHz
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Minimum Maximum Typical Maximum Typical
Part Package Breakdown Series Total Total Total
Number Marking Lead Voltage Resistance Capacitance Capacitance Inductance
HSMP- Code Code Conguration VBR (V) RS (Ω) CT (pF) CT (pF) LT (nH)
4820 FA A Dual Anode 50 0.6 0.75 1.0 1.0
482B FA A Dual Anode
Test Conditions VR = VBR IF = 10 mA f = 1 MHz f = 1 MHz f = 500 MHz–
Measure VR = 20 V VR = 0 V 3 GHz
IR ≤ 10 µA
Typical Parameters at TC = 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- RS (Ω) τ (ns) Trr (ns) CT (pF)
382x 1.5 70 7 0.60 @ 20 V
Test Conditions f = 100 MHz IF = 10 mA VR = 10 V
IF = 10 mA IF = 20 mA
90% Recovery
2
Page 3
Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
100
10
1
0.1
RF RESISTANCE (OHMS)
IF – FORWARD BIAS CURRENT (mA)
0.010.1110100
1.4
1.2
1.0
0.8
0.6
01020304050
VR – REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Figure 4. Capacitance vs. Reverse Voltage.
120
115
110
105
100
95
90
85
11030
IF – FORWARD BIAS CURRENT (mA)
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current.
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
FORWARD CURRENT (mA)
Figure 2. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltages.
T
rr
– REVERSE RECOVERY TIME (ns)
1
10
100
102030
VR = 2V
VR = 5V
VR = 10V
100
10
1
0.1
0.01
00.20.40.60.81.0 1.2
I
F
– FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (mA)
Figure 1. Forward Current vs. Forward Voltage.
125C
25C
–50C
CW POWER IN (dBm)
Figure 6. Large Signal Transfer Curve of the
HSMP-482x Limiter.
CW POWER OUT (dBm)
0
30
25
20
15
10
5
0
4010
5
20 25 30 3515
Measured with external
bias return
1.0 GHz
1.5 GHz
RF COMMON
RF 1
BIAS 1
RF 2
BIAS 2
RF COMMON
BIASBIAS
RF 2
RF 1
Typical Applications for Multiple Diode Products
Figure 7. Simple SPDT Switch, Using Only Positive Current.
3
Figure 8. High Isolation SPDT Switch, Dual Bias.
Page 4
Typical Applications for Multiple Diode Products, continued
BIAS
RF COMMON
RF 1RF 2
BIAS
RF COMMON
RF 2
RF 1
BIAS
Figure 9. Switch Using Both Positive and Negative Bias Current.
Figure 11. High Isolation SPST Switch (Repeat Cells as Required.
Figure 10. Very High Isolation SPDT Switch, Dual Bias.
Figure 12. Power Limiter Using HSMP-3822 Diode Pair.
See Application Note 1050 for details.
4
Page 5
Typical Applications for HSMP-482x Low Inductance
50 OHM MICROSTRIP LINES
PAD CONNECTED TO
GROUND BY TWO
VIA HOLES
12
3
HSMP-482x
0.3 nH
0.3 nH
0.8 pF
1.5 nH1.5 nH
Co-Planar Waveguide
Groundplane
Center Conductor
Groundplane
0.8 pF
0.75 nH
Series
Microstrip Series Connection for HSMP-482x Series
In order to take full advantage of the low inductance
of the HSMP-482x series when using them in series
applications, both lead 1 and lead 2 should be connected
together, as shown in Figure 14.
Figure 13. Internal Connections.
Figure 14. Circuit Layout.
Microstrip Shunt Connections for HSMP-482x Series
Figure 16. Equivalent Circuit.
Co-Planar Waveguide Shunt Connection for HSMP-482x Series
Co-Planar waveguide, with ground on the top side of
the printed circuit board, is shown in Figure 17. Since
it eliminates the need for via holes to ground, it oers
lower shunt parasitic inductance and higher maximum
attenuation when compared to a microstrip circuit. See
AN1050 for details.
In Figure 15, the center conductor of the microstrip line
is interrupted and leads 1 and 2 of the HSMP-482x diode
are placed across the resulting gap. This forces the 0.5
nH lead inductance of leads 1 and 2 to appear as part of
a low pass lter, reducing the shunt parasitic inductance
and increasing the maximum available attenuation.
The 0.3 nH of shunt inductance external to the diode
is created by the via holes, and is a good estimate for
0.032" thick material.
Figure 15. Circuit Layout, HSMP-482x Limiter.
Figure 17. Circuit Layout.
Figure 18. Equivalent Circuit.
5
Page 6
Assembly Information
0.026
0.039
0.079
0.022
Dimensions in inches
0.039
1
0.039
1
0.079
2.0
0.031
0.8
Dimensions in
inches
mm
0.035
0.9
SOT-323 PCB Footprint
A recommended PCB pad layout for the miniature SOT323 (SC-70) package is shown in Figure 19 (dimensions
are in inches). This layout provides ample allowance for
package placement by automated assembly equipment
without adding parasitics that could impair the
performance.
Figure 19. Recommended PCB Pad Layout
for Avago’s SC70 3L/SOT-323 Products.
SOT-23 PCB Footprint
Figure 20. Recommended PCB Pad Layout
for Avago’s SOT-23 Products.
6
Page 7
SMT Assembly
25
Time
Temperature
Tp
T
L
tp
t
L
t 25° C to Peak
Ramp-up
ts
Ts
min
Ramp-down
Preheat
Critical Zone
T
L
to Tp
Ts
max
Reliable assembly of surface mount components is a
complex process that involves many material, process,
and equipment factors, including: method of heating
(e.g., IR or vapor phase reow, wave soldering, etc.) circuit
board material, conductor thickness and pattern, type of
solder alloy, and the thermal conductivity and thermal
mass of components. Components with a low mass, such
as the SOT-323/-23 package, will reach solder reow
temperatures faster than those with a greater mass.
Avago’s diodes have been qualied to the timetemperature prole shown in Figure 21. This prole is
representative of an IR reow type of surface mount
assembly process.
After ramping up from room temperature, the circuit
board with components attached to it (held in place with
solder paste) passes through one or more preheat zones.
The preheat zones increase the temperature of the
board and components to prevent thermal shock and
begin evaporating solvents from the solder paste. The
reow zone briey elevates the temperature suciently
to produce a reow of the solder.
The rates of change of temperature for the ramp-up and
cool-down zones are chosen to be low enough to not
cause deformation of the board or damage to components
due to thermal shock. The maximum temperature in the
reow zone (T
) should not exceed 260°C.
MAX
These parameters are typical for a surface mount
assembly process for Avago diodes. As a general
guideline, the circuit board and components should be
exposed only to the minimum temperatures and times
necessary to achieve a uniform reow of solder.