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HSM88WK
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-0489F (Z)
Features
• Proof against high voltage.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM88WK C4 MPAK
Rev 6
Jul 1998
Outline
3
2
(Top View)
1
1 Anode
2 Anode
3 Cathode
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HSM88WK
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
*1
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Notes 1.Per one device
10 V
15 mA
Electrical Characteristics (Ta = 25°C)
*1
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
350 — 420 mV IF = 1 mA
500 — 580 IF = 10 mA
— — 0.2 µAVR = 2V
——10 VR = 10V
Capacitance C — — 0.85 pF VR = 0V, f = 1 MHz
Capacitance deviation ∆C — — 0.10 pF VR = 0V, f = 1 MHz
Forward voltage deviation ∆V
ESD-Capability
*2
— 30 — — V C=200pF , Both forward and reverse
——10mVIF = 10 mA
F
direction 1 pulse.
Notes 1. Per one device
Notes 2. Failure criterion ; IR ≥ 400nA at VR =2 V
2
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Main Characteristic
HSM88WK
-2
10
-3
10
-4
10
F
-5
10
-6
10
-7
Forward current I (A)
10
-8
10
-9
10
0
0.2
0.4
Forward voltage V (V)
0.6 0.8 1.0
F
Fig.1 Forward current Vs. Forward voltage
f=1MHz
-5
10
-6
10
(A)
R
-7
10
-8
Reverse current I
10
-9
10
0
5
10
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
15
10
1.0
Capacitance C (pF)
-1
10
-1
10 1.0
Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
10
3
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HSM88WK
Package Dimensions
Laser Mark
3
0.4
+ 0.10
– 0.05
+ 0.1
0.65
– 0.3
0.16
+ 0.10
– 0.06
Unit : mm
C 4
21
0.95
0.95
1.9
+ 0.3
2.8
– 0.1
+ 0.1
0.65
0.3
1.5
– 0.3
+ 0.2
2.8
+ 0.2
1.1
– 0.6
– 0.1
0 – 0.10
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
1 Anode
2 Anode
3 Cathode
MPAK(1)
—
SC-59A
0.011
4
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Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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