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HSK83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-169C(Z)
Features
• High reverse voltage. (VR=250V)
• LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No. Cathode band 2nd band Package Code
HSK83 White Verdure LLD
Rev 3
Dec. 1998
Outline
Cathode band
12
2nd. band
Cathode band
12
2nd. band
1. Cathode
2. Anode
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HSK83
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak
RM
R
FM
*1
I
FSM
forward surge current
Average rectified current I
O
Junction temperature Tj 175 °C
Storage temperature Tstg -65 to +175 °C
Note 1. Value at duration of 1s.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R1
I
R2
Capacitance C — 1.5 — pF VR = 0V, f = 1 MHz
Reverse recovery
t
rr
time
— — 1.0 V IF = 100 mA
— — 0.1 µAVR = 250V
— — 100 VR = 300V
— — 100 ns IF = IR =30 mA, Irr = 3mA, RL = 100Ω
300 V
250 V
625 mA
1A
150 mA
2
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Main Characteristic
HSK83
-1
10
-2
10
F
-3
10
Forward current I (A)
-4
10
0 0.2 0.8
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.6
Forward voltage V (V)
F
Fig.1 Forward current Vs. Forward voltage
f=1MHz
-5
10
Ta=75°C
-6
10
R
-7
10
Reverse current I (A)
-8
10
-9
10
1.2
1.00.4
0 50 200
Ta=50°C
Ta=25°C
150
Reverse voltage V (V)
R
250100
Fig.2 Reverse current Vs. Reverse voltage
10
1.0
Capacitance C (pF)
-1
10
1.0 10
Reverse voltage V (V)
Fig.3 Capacitance Vs. Reverse voltage
2
10
R
3
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HSK83
Package Dimensions
Unit : mm
+0.1
3.5
–0.2
12
1.35 ± 0.1
φ
φ
(0.35typ)
2nd. band (Verdure)
Cathode band (White)
( ) : Reference only
+0.1
3.5
–0.2
12
1.35 ± 0.1
(0.35typ)
2nd. band (Verdure)
1. Cathode
2. Anode
Cathode band (White)
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
LLD
\
\
0.027
4
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HSK83
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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