Datasheet HSB1109S Datasheet (HSMC)

HI-SINCERITY

MICROELECTRONICS CORP.

HSB1109S

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSB1109S is designed for low frequency and high voltage
amplifier applications complementary pair with HSD1609S.

Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/4

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 900 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage...................................................................................... -160 V

VCEO Collector to Emitter Voltage................................................................................... -160 V

VEBO Emitter to Base Voltage............................................................................................. -5 V

IC Collector Current ...................................................................................................... -100 mA

TO-92

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO -160 - - V IC=-10uA, IE=0
BVCEO -160 - - V IC=-1mA. IB=0
BVEBO -5 - - V IE=-10uA, IC=0

ICBO - - -10 uA VCB=-140V, IE=0

*VCE(sat) - - -2 V IC=-30mA, IB=-3mA

VBE(on) - - -1.5 V VCE=-5V, IC=-10mA

*hFE1 60 - 320 VCE=-5V, IC=-10mA
*hFE2 30 - - VCE=-5V, IC=-1mA

fT - 140 - MHz VCE=-5V, IC=-10mA, f=100MHz

Cob - 5.5 - pF VCB=-10V, IE=0, f=1MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank B C D

Range 60-120 100-200 160-320

HSB1109S HSMC Product Specification

HI-SINCERITY

)

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 2/4

1000

125oC

100

hFE

10

1 10 100

25oC

75oC

hFE @ VCE=5V

Collector Current -IC (mA)

ON Voltage & Collector Cur rent

1000

25oC

Current Gain & Collector Current

1000

75oC

100

Saturation Voltage (mV)

10

0.1 1 10 100

125oC

25oC

Collector Current - IC (mA)

CE(sat)

V

@ IC=10I

Output Capacitance &

Rever se-Blased Voltage

20

15

Sat urati on Voltage & Collector Current

B

75oC

ON Voltage ( m V)

100

0.1 1 10 100

1000

100

Cutoff Fr equen cy ( M Hz

10

Cutoff Frequency & Collector Current

125oC

Collector Current - IC (mA)

BE(ON)

V

@ VCE=5V

10

5

Output Capactt ance-Cob (pF)

0

0.1 1 10 100 1000

Reverse-Biased-V

CB

(V)

Safe Operating Area

1000

100

10

Collector Current (m A)

1

0.1 1 10 100 1000

Collector Current -IC (mA)

1

1 10 100 1000

Forwar d Biase d Vol t age ( V)

HSB1109S HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 3/4

1000

Power Derating

900
800
700
600
500
400
300

Power Dis s ip ation-PD (mW)

200
100

0

0 20 40 60 80 100 120 140 160

Ambient Temper atu re-Ta (oC)

HSB1109S HSMC Product Specification

HI-SINCERITY

g

A

MICROELECTRONICS CORP.

TO-92 Dimension

Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 4/4

A

α2

B

31

2

Marking:

HB

S

110

9S

Date Code Control Code

Rank

α3

C

D

H

I

α1

G

Style: Pin 1.Emitter 2.Collector 3.Base

E

DIM

F

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

3-Lead TO-92 Plastic Package

HSMC Packa

e Code:

DIM

*: Typical

Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76

Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.

2.Controlling dimension: millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.

Material:

• Lead: 42 Alloy; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

α1
α2
α3

-

-

-

*5°
*2°
*2°

-

-

-

*5°
*2°
*2°

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: [phone] Fax: [phone]

• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: [phone]~5 Fax: [phone]

HSB1109S HSMC Product Specification