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HI-SINCERITY
MICROELECTRONICS CORP.
HSB1109
PNP EPITAXIAL PLANAR TRANSISTOR
Features
• Low frequency high voltage amplifier
• Complementary pair with HSD1609
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current....................................................................................................... -100 mA
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -160 - - V IC=-10uA
BVCEO -160 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -10 uA VCB=-140V
*VCE(sat) - - -2 V IC=-30mA, IB=-3mA
VBE(on) - - -1.5 V IC=-10mA, VCE=-5V
*hFE1 60 - 320 IC=-10mA, VCE=-5V
*hFE2 30 - - IC=-1mA, VCE=-5V
fT - 140 - MHz IC=-10mA, VCE=-5V
Cob - 5.5 - pF VCB=-10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B C D
Range 60-120 100-200 160-320
HSB1109 HSMC Product Specification
Page 2
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 2/3
1000
125oC
100
hFE
10
1 10 100
25oC
75oC
hFE @ VCE=5V
Collector Current -IC (mA)
ON Voltage & Collector Cur rent
1000
25oC
Current Gain & Collector Current
1000
Sat urati on Voltage & Collector Current
75oC
100
Saturation Voltage (mV)
10
0.1 1 10 100
100
Capacitance & Reverse- Biased Voltage
125oC
25oC
Collector Current - IC (mA)
CE(sat)
V
@ IC=10I
B
75oC
ON Voltage ( m V)
100
0.1 1 10 100
1000
100
Cutoff Fr eque ncy ( M Hz)...
125oC
BE(ON)
V
@ VCE=5V
Collector Current - IC (mA)
Cutoff Frequency & Collector Current
fT @ VCE=5V
10
Capacitance (Pf )
Cob
1
0.1 1 10 100
Reverse Biased Vol t ag e ( V)
Safe Operating Area
1
0.1
PT=1 ms
PT=100 ms
Collector Current (A
0.01
PT=1 s
10
1 10 100 1000
Collector Current (mA)
0.001
1 10 100 1000
Forwar d Voltage ( V)
HSB1109 HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
D
C
N
M L K
E
F
3
2
1
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 3/3
Marking:
HB
S
B
O
H
I
G
J
Date Code
Style: Pin 1.Emitter 2.Collector 3.Base
110
9
Rank
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1109 HSMC Product Specification
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