Datasheet HRW0702A Datasheet (HIT)

Page 1
HRW0702A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-109E(Z)
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• MPAK Package is suitable for high density surface mounting and high speed assembly.
Type No. Laser Mark Package Code
HRW0702A S15 MPAK
Rev 5
Oct. 1997
Outline
3
2
(Top View)
1
1 NC 2 Anode 3 Cathode
Page 2
HRW0702A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
*1
V
RRM
voltage Forward current IF* Non-Repetitive peak
1
I
FM
forward current Non-Repetitive peak
*2
I
FSM
forward surge current Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C
Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V Reverse current I
F
R
Capacitance C — 120 — pF VR = 0V, f = 1 MHz Thermal resistance R
th(j-a)
Notes 1. Polyimide board
— — 0.43 V IF = 700 mA — — 200 µAVR = 20V
— 340 — °C/W Polyimide board
20 V
700 mA
1.4 A
5A
*1
20hx15wx0.8t
0.8
1.5
3.0
1.5
1.5
Unit: mm
2
Page 3
Main Characteristic
HRW0702A
10
Pulse test
1.0 Ta=75°C
(A)
F
-1
10
Ta=25°C
10
-2
Forward current I
-3
10
-4
10
0 0.2 0.4
Forward voltage V
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
2
10
f=1MHz Pulse test
(V)
1.0
-1
10
Pulse test
-2
10
(A)
R
-3
10
-4
10
Reverse current I
-5
10
-6
10
Ta=75°C
Ta=25°C
0510
15 20
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
25
10
Capacitance C (pF)
1.0
1.0 Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
4010
3
Page 4
HRW0702A
Main Characteristic
0.6
0A
0.5
(W)
d
Tj =25°C
0.4
0.3
0.2
0.1
Forward power dissipation P
0
0
0.1 Forward current
Fig4. F
orward power dissipation Vs. Forward current
0.8
(A)
@Io
0.6
(W)
d
2.5
2.0
1.5
0V
Tj =125°C
t
t
T
D=
\
T
D=5/6
D=2/3
D=1/2
D=1/6
t
T
t
\
D=
T
D=1/3 Sin(˘=180°)
D=1/2 DC
1.0
˘=
180°)
Sin(
0.5
Reverse power dissipation P
0.2
0.6
0.5
0.40.3
@@
I
@(A)
F
VR=V Tj =125°C Rth(j-a)=340°C/W
RRM
/2
0.7
010
Reverse voltage
Fig5.
Reverse power dissipation Vs. Reverse voltage
@@
V
20515
@(V)
R
25
0
DC
0.4
0.2
Average rectified current
0
0
D=1/6
050
-25
Sin(˘=180°)
D=1/2
125
10025 75
Ambient temperature Ta ( °C)
Fig.6 Average rectified current Vs. Ambient temperature
4
D=1/3
Page 5
Package Dimensions
Laser Mark
+ 0.10
0.4
– 0.05
3
+ 0.1
– 0.3
0.65
0.16
+ 0.10 – 0.06
HRW0702A
Unit : mm
S15
21
0.95
0.95
1.9
+ 0.3
2.8
– 0.1
+ 0.1
0.65
0.3
1.5
– 0.3
+ 0.2
2.8
+ 0.2
1.1
– 0.6
– 0.1
0 – 0.10
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
1 NC 2 Anode 3 Cathode
MPAK(1)
—
SC-59A
0.011
5
Page 6
Cautions
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2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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