
HRP22
Silicon Schottky Barrier Diode for Rectifying
ADE-208-303A(Z)
Features
• Good for high-frequency rectify.
• High reliability with glass seal.
Ordering Information
Type No. Cathode Band Package Code
HRP22 White DO-41
Rev 1
Jul 1997
Outline
1
Cathode band
1. Cathode
2. Anode
2

HRP22
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Non-Repetitive peak
*1
V
RSM
reverse voltage
Average rectified current I
*2
o
Junction temperature Tj 125 °C
Storage temperature Tstg -40 to +125 °C
Note: 1. See from Fig.1 to Fig.6
Note: 2. 20msec sine wave
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
— — 0.55 V IF = 1.0A
— — 2.0 mA VR = 50V
50 V
50 V
1.0 A
2

Main Characteristic
HRP22
10
Tj=25 °C
F
1.0
Forward current I (A)
–1
10
0
0.2 0.4
0.6
0.8
Forward voltage V (V)
1.0
1.2
1.4
F
Fig.1 Forward current Vs. Forward voltage
1.2
1.0
(A)
O
0.8
0.6
0.4
Average forward current I
0.2
0
-25
VR=50V
VR=40V
VR=20V
25 500
Ambient temperature
5mm
2 mm
2 mm
Ceramic Board
Rth=100°C/W
θ=180°,Sine wave
Tj=125°C
75
100
Ta (°C)
125
150
Fig.3 Average forward current Vs. Ambient temperature
Tj=125 °C
–2
10
(A)
R
Reverse current I
–3
10
0
3010
20 40
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
1.2
1.0
(A)
O
0.8
0.6
0.4
0.2
VR=50V
VR=40V
VR=20V
0
-25
25 500
Average forward current I
5mm
Print Board
Rth=153°C/W
θ=180°,Sine wave
Tj=125°C
75
Ambient temperature
Fig.4 Average forward current Vs. Ambient temperature
50
2 mm
2 mm
125
100
Ta (°C)
60
150
3

HRP22
Main Characteristic
2.5
θ=180°,Sine wave
Tj=25°C
2.0
(W)
d
1.5
1.0
0.5
Forward power dissipation P
0
0
Fig.5 Forward power dissipation Vs. Forward current
3
10
0.5
Forward current I
1.51.0
F
f=1MHz
Pulse test
2.0
(A)
0.5
θ=180°,Sine wave
Tj=125°C
0.4
(W)
d
0.3
0.2
0.1
Reverse power dissipation P
0
10
0
Reverse voltage V
Fig.6 Reverse power dissipation Vs. Reverse voltage
3020
(V)
R
40
50
2
10
Capacitance C (pF)
10
1.0
Fig.7 Capacitance Vs. Reverse voltage
4
4010
Reverse voltage V R (V)

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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