Page 1
HRF502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-245C(Z)
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HRF502A 502A DO-214
Rev 3
Sep. 1997
Outline
Cathode mark
Mark
502A
12
Lot No.
1. Cathode
2. Anode
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HRF502A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
*1
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
*1
o
*2
I
FSM
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -40 to +125 °C
Note: 1. See from Fig.4 to Fig.7
Note: 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
ESD-Capability — 250 — — V C=200pF , R=0Ω , Both forward and reverse
Thermal resistance Rth(j-a) — 90 — °C/W Glass epoxy board
Rth(j-c) — 42 — Tc=25°C
Note: 1. Glass epoxy board
— — 0.40 V IF = 5A
— — 1.0 mA VR = 20V
20 V
5A
100 A
direction 1 pulse.
*1
6.8
Land size
2.0
3.5
Unit: mm
2
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Main Characteristic
HRF502A
2
10
Pulse test
10
F
1.0
-1
10
Ta=75°C
Ta=25°C
Forward current I (A)
-2
10
-3
10
0 0.2
Forward voltage V (V)
0.4
F
Fig.1 Forward current Vs. Forward voltage
3
10
f=1MHz
Pulse test
-2
10
Pulse test
Ta=75°C
-3
10
R
10
-4
Ta=25°C
Reverse current I (A)
-5
10
-6
0.60.1 0.50.3
10
10
5
0
Reverse voltage V (V)
15
20
R
25
Fig.2 Reverse current Vs. Reverse voltage
2
10
Capacitance C (pF)
10
1.0
Reverse voltage V (V)
Fig.3 Capacitance
R
Vs. Reverse voltage
4010
3
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HRF502A
Main Characteristic
5
0A
(W)
d
t
4
Tj =25°C
3
t
\
D=
T
T
D=1/6
Sin
D=1/3
D=1/2
2
1
Forward power dissipation P
0
0
2
1
Forward current I
3
F
(A)
DC
6
54
Fig.4 Forward p ower dissipation Vs. Forward current
6
VR=V
RRM
Tj =125°C
/2
5
DC
(A)
O
4
Sin
D=1/2
3
D=1/3
12
0V
D=5/6
D=2/3
D=1/2
(W)
d
10
8
6
T
Tj =125°C
t
t
\
D=
T
Sin
4
Reverse power dissipation P
2
0
0
Reverse voltage V
5
1510
(V)
R
20
Fig.5 Reverse power dissipation Vs. Reverse voltage
6
(A)
VR=V
Tj =125°C
5
O
DC
4
Glass epoxy PCB
RRM
/2
3
2
Average forward current I
D=1/6
1
0
-25
25 500
Case temperature
75
Tc (°C)
100
Fig.6 Average forward current Vs. Case temperature
4
125
2
Average forward current I
1
Sin
D=1/2
0
-25
25 500
Ambient temperature
Fig.7 Average forward current Vs. Ambient temperature
75
Ta (°C)
100
125
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Package Dimensions
HRF502A
Unit : mm
Cathode Mark
502A
7.0 ± 0.2
8.0 ± 0.3
1.2 ± 0.3
21
3.0 ± 0.2
4.0 ± 0.2
Lot No.
0.25
2.1 ± 0.2
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
1 Cathode
2 Anode
DO-214
DO-214
—
0.16
5
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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