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HRF32
Silicon Schottky Barrier Diode for Rectifying
ADE-208-164D(Z)
Features
• Good for high-frequency rectify.
• LRP structure ensures higher reliability.
Ordering Information
Type No. Laser Mark Package Code
HRF32 32 LRP
Rev 4
Jul. 1997
Outline
Cathode mark
Mark
12
3 2
1. Cathode
2. Anode
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HRF32
t
t
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
*1
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
*1
o
*2
I
FSM
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -40 to +125 °C
Note: 1. See from Fig.4 to Fig.7
Note: 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
ESD-Capability — 150 — — V C=200pF , R=0Ω, Both forward and reverse
Thermal resistance Rth(j-a) — — 108 °C/W Alumina board
Note: 1. Alumina board
— — 0.8 V IF = 1.0A
— — 1.0 mA VR = 90V
— — 157 Print board
90 V
1.0 A
20 A
direction 1 pulse.
*1
*2
(25mm ~25mm ~0.64
2.0mm
4.2mm
2.0mm
Note: 2. Print board
(25mm ~25mm ~1.64
2.0mm
4.2mm
2.0mm
2
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Main Characteristic
1.0
10
HRF32
–4
Pulse test
–1
10
–2
10
F
–3
10
–4
10
–5
10
Forward current I (A)
–6
10
–7
10
0
0.2 0.4
Forward voltage V (V)
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
f=1MHz
Pulse test
3
10
1.0
Pulse test
–5
10
R
–6
10
Reverse current I (A)
–7
10
–8
10
0
40 6020
Reverse voltage V (V)
R
Fig.2 Reverse current Vs. Reverse voltage
80
100
2
10
Capacitance C (pF)
10
1.0 10
Reverse voltage V (V)
Fig.3 Capacitance Vs. Reverse voltage
2
10
R
3
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HRF32
Main Characteristic
1.2
1.0
(W)
d
0.8
0.6
0A
t
T
D=
D=1/6
t
\
T
D=1/3
D=1/2
Sin
DC
0.4
Forward power dissipation P
0.2
0
0
0.4
Forward current I
1.20.8
F
1.6
(A)
Fig.4 Forward p ower dissipation Vs. Forward current
(A)
1.6
DC
1.4
1.2
D=1/2
O
1.0
D=1/3
VR=V
RRM
Tj=125°C
Alumina Board
0.8
D=1/6
0.6
Average forward current I
0.4
Sin
0.2
0.10
0V
t
t
\
0.08
(W)
d
0.06
D=
T
T
D=5/6
D=2/3
D=1/2
0.04
Sin
0.02
Reverse power dissipation P
0
20
0
Reverse voltage V
80
6040
R
100
(V)
@
Fig.5 Reverse power dissipation Vs. Reverse voltage
(A)
1.6
1.4
1.2
O
DC
VR=V
RRM
Tj=125°C
Print Board
1.0
0.8
D=1/3
0.6
D=1/6
Average forward current I
0.4
Sin
D=1/2
0.2
0
25 500
Ambient temperature
75
100
Ta (°C)
125
Fig.6 Average forward current Vs. Ambient temperature
4
0
25 500
Ambient temperature
Fig.7 Average forward current Vs. Ambient temperature
75
100
Ta (°C)
125
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Package Dimensions
Cathode Mark
HRF32
Unit : mm
3 2
21
4.5 ± 0.2
5.0 ± 0.3
1.2 ± 0.3 1.2 ± 0.3
2.5 ± 0.3
1.5 ± 0.2
0.2
2.0 ± 0.3
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
1 Cathode
2 Anode
LRP
—
—
0.058
5
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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