Page 1
HRB0502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-609(Z)
Features
• Low forward voltage drop and suitable for high efficincy rectifying.
• CMPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HRB0502A E3 CMPAK
Rev 0
Mar. 1998
Outline
3
2
(Top View)
1
1 NC
2 Anode
3 Cathode
Page 2
HRB0502A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Average rectified current I
Non-Repetitive peak forward
*1
O
*2
I
FSM
surge current
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Notes 1. See from Fig.4 to Fig.6
Notes 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — 120 — pF VR = 0V, f = 1 MHz
Thermal resistance R
th(j-a)
Notes 1. Polyimide board
— — 0.4 V IF = 500 mA
— — 200 µAVR = 20V
— 450 — °C/W Polyimide board
20 V
500 mA
5A
*1
3.0
1.5
1.5
20hx15wx0.8t
0.8
2.0
Unit: mm
2
Page 3
Main Characteristic
HRB0502A
10
Pulse test
1.0
Ta=75°C
(A)
F
-1
10
Ta=25°C
10
-2
Forward current I
-3
10
-4
10
0 0.2 0.4
Forward voltage V
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
2
10
f=1MHz
Pulse test
(V)
1.0
-1
10
Pulse test
-2
10
(A)
R
-3
10
-4
10
Reverse current I
-5
10
-6
10
Ta=75°C
Ta=25°C
0510
15 20
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
25
10
Capacitance C (pF)
1.0
1.0
Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
4010
3
Page 4
HRB0502A
Main Characteristic
0.4
0
(W)
d
0.3
tp
T
Tj =25°C
0.2
0.1
Forward power dissipation P
0
0
0.1
Forward current
Fig4. F
orward power dissipation Vs. Forward current
VR=3V
0.6
Tj =125°C
(A)
Rth(j-a)=450°C/W
0.5
@Io
0.4
0.3
D=1/6
0.2
2.5
2.0
1.5
0
VR
Tj =125°C
tp
tp
D=
T
T
D=5/6
D=2/3
D=1/2
Io
tp
D=
T
D=1/6
D=1/3
(W)
d
Sin wave
D=1/2
DC
1.0
Sin wave
0.5
Reverse power dissipation P
0.2
@@
0.5
0.40.3
I
@(A)
F
Fig5.
010
Reverse voltage
@@
V
Reverse power dissipation Vs. Reverse voltage
20515
@(V)
R
25
0
DC
D=1/2
Sin wave
D=1/3
0.1
Average rectified current
0
0
050
-25
10025 75
Ambient temperature Ta ( °C)
Fig.6 Average rectified current Vs. Ambient temperature
4
125
0
Io
tp
tp
D=
T
T
Page 5
Package Dimensions
Laser Mark
+ 0.1
0.3
– 0.05
0.65
2.0 ± 0.2
3
E 3
2
1.3 ± 0.2
HRB0502A
Unit : mm
+ 0.1
0.3
– 0.05
1
0.3
+ 0.1
– 0.05
0.65
0.425
1.25 ± 0.1
0.425
2.1 ± 0.3
0.16
0 - 0.1
+ 0.1
– 0.06
1 NC
2 Anode
3 Cathode
0.2
0.9 ± 0.1
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
CMPAK
—
SC-70
0.006
5
Page 6
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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