Datasheet HRB0103A Datasheet (HIT)

Page 1
HRB0103A
Silicon Schottky Barrier Diode
for Low Voltage High Speed Switching , Rectifying
ADE-208-490(Z)
Features
• Low forward voltage drop and suitable for high effifiency forward current.
Ordering Information
Type No. Laser Mark Package Code
HRB0103A E1 CMPAK
Rev 0
Apr. 1997
Outline
3
2
(Top View)
1
1 NC 2 Anode 3 Cathode
Page 2
HRB0103A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
I
*1
o
FSM
*2
Average rectified current I Non-Repetitive peak
forward surge current Junction temperature Tj 125 °C Storage temperature Tstg -55 to +150 °C
Note: 1. See Fig.5 Note: 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V Reverse current I
F
R
— — 0.44 V IF = 100 mA ——50µAVR = 30V
30 V
100 mA 3A
2
Page 3
Main Characteristic
HRB0103A
10
10
10
F
10
10
Forward current I (A)
10
10
10
(W)
d
Forward power dissipation P
Fig3. F
orward power dissipation Vs. Average rectified current
-2
Pulse test
-3
-4
-5
-6
-7
-8
-9
0.1 0.2
0
Forward voltage V (V)
0.3
0.4
F
Fig.1 Forward current Vs. Forward voltage
0.08
0.07
0.06
0.05
0.04
3.0
20hx15wx0.8t
1.5
Unit: mm
D=1/6
0.8
sin wave
2.0
D=1/3
D=1/2
DC
0.03
0.02
0.01 0
0
0
40
Average rectified current
Io
0
tp
tp
D=
T
T
100
@@
I
120
o
@(mA)
8020 60
0.5
-2
10
Pulse test
-3
10
R
-4
10
-5
10
Reverse current I (A)
-6
10
-7
10
01020
Reverse voltage V (V)
30 40
R
Fig.2 Reverse current Vs. Reverse voltage
(W)
d
0.08
0.07
0.06
0.05
0.04
0.03
3.0
0
VR
20hx15wx0.8t
1.5
Unit: mm
tp
D=
T
0.8
2.0
tp T
0.02
0.01
Reverse power dissipation P
0
0
0
Peak reverse voltage
Fig4.
Reverse power dissipation Vs. Peak reverse voltage
10
20515
@@
V
25
RM
50
DC
D=5/6
D=2/3
D=1/2 sin wave
30
@(V)
3
Page 4
HRB0103A
Main Characteristic
120
(mA)
100
@Io
80
DC
D=1/6
60
40
20
Average rectified current
D=1/3
20hx15wx0.8t
0.8
3.0
1.5
0
0
2.0
Unit: mm
50
10025 75
125
sin wave
D=1/2
150
VR=30V
Ambient temperature Ta ( °C)
Fig.5 Average rectified current Vs. Ambient temperature
0
Io
tp
tp
D=
T
T
4
Page 5
Package Dimensions
Laser Mark
+ 0.1
0.3
– 0.05
0.65
2.0 ± 0.2
3
E 1
2
1.3 ± 0.2
HRB0103A
Unit : mm
+ 0.1
0.3
– 0.05
1
0.3
+ 0.1 – 0.05
0.65
0.425
1.25 ± 0.1
0.425
2.1 ± 0.3
0.16
0 - 0.1
+ 0.1 – 0.06
1 NC 2 Anode 3 Cathode
0.2
0.9 ± 0.1
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
CMPAK
—
SC-70
0.006
5
Page 6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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