HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 1/4
HPN2369A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2369A is designed for general purpose switching and amplifier
applications.
Features
• Low Collector Saturation Voltage
• High Speed Switching Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................................... 40 V
VCES Collector to Emitter Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage.................................................................................................... 15 V
VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V
IC Collector Current ..................................................................................................................... 200 mA
ICM Peak Collector Current ......................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=10uA, IE=0
BVCES 40 - - V IC=10uA, VBE=0
BVEBO 4.5 - - V IE=10uA, IC=0
IEBO - - 100 nA VEB=4V, IC=0
ICBO - - 400 nA VCB=20V, IE=0
ICES - - 400 nA VCE=40V, VBE=0
*VCE(sat)1 - - 200 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 250 mV IC=30mA, IB=3mA
*VCE(sat)3 - - 300 mV IC=10mA, IB=10mA
*VCE(sat)4 - - 500 mV IC=100mA, IB=10mA
*VBE(sat) 700 - 850 mV IC=10mA, IB=1mA
*hFE1 40 - 120 IC=10mA, VCE=0.35V
*hFE2 30 - - IC=30mA, VCE=0.4V
*hFE3 20 - - IC=100mA, VCE=1V
fT 500 - - MHz IC=10mA, VCE=10V, f=100MHz
Cob - - 4 pF VCB=5V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HPN2369A HSMC Product Specification
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 2/4
100
10
hFE
1
0.1 1 10 100 1000
1
Current Gain & Col l ect or Current
VCE=1V
Collector Curren t (m A)
On Voltage & Collector Current
BE(on)
V
@ VCE=1V
1
0.1
Satur ation Vol t age ( V)
0.01
Sat uration Voltage & Collector Cur rent
BE(sat)
V
CE(sat)
V
0.1 1 10 100
Collector Curren t (m A)
@ IC=10I
@ IC=10I
B
B
Capacitance & Rev erse-Biased Voltage
10
On Volt age (m V)
0.1
0.1 1 10 100
Collector Curren t (m A)
Cut off Frequency & Coll ect or Current
10000
1000
(GHz)
100
10
Cutoff Frequency
1
0.1
1 10 100
Col lect o r Current-IC (mA)
fT @ VCE=10
Capac itan c e ( p F )
1
0.1 1 10 100
Cob
Rever se- Biased Voltage (V)
Safe Oper ati ng Area
10000
1000
(mA)
C
100
Collector Curren t-I
10
1
1 10 100
Forward Volt age- VCE (V)
PT=1ms
PT=100ms
PT=1s
HPN2369A HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 3/4
700
600
500
400
300
200
Power Dissipat ion -PD(mW)
100
0
0 20 40 60 80 100 120 140 160
Ambient T em perat ure-T a(oC)
PD-Ta
HPN2369A HSMC Product Specification
HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 4/4
C
α2
A
B
31
2
α3
D
H
I
α1
G
Marking:
HSMC Logo
Part Number
Date Code
HSMC Logo
Part Number
Style: Pin 1.Emitter 2.Base 3.Collector
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
F
DIM
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code :
DIM
α1
α2
α3
*: Typical
Min. Max. Min. Max.
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Fac tory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HPN2369A HSMC Product Specification
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