Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6118
Issued Date : 1992.10.23
Revised Date : 2002.04.15
Page No. : 1/4
HPN2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2222A is designed for general purpose amplifier and high speed,
medium-power switching applications.
Features
• Low Collector Saturation Voltage
• High Speed Switching
• For Complementary Use with PNP Type HPN2907A
Absolute Maximum Ratings
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................. 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage..................................................................................................... 75 V
VCEO Collector to Emitter Voltage ................................................................................................. 40 V
VEBO Emitter to Base Voltage.......................................................................................................... 6 V
IC Collector Current ................................................................................................................... 600 mA
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 75 - - V IC=10uA, IE=0
BVCEO 40 - - V IC=10mA, IB=0
BVEBO 6 - - V I E= 10uA, IC=0
ICBO - - 10 nA VCB=60V, IE=0
ICEX - - 10 nA VCB=60V, VEB(OFF)=3V
IEBO - - 50 nA VEB=3V, IC=0
*VCE(sat)1 - - 300 mv IC=150 mA, IB=15mA
*VCE(sat)2 - - 1 V IC=500mA, IB=5 0mA
*VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA
*VBE(sat)2 - - 2 V IC=500mA, IB=50mA
*hFE1 35 - - VCE=10V, IC=100uA
*hFE2 50 - - VC E =1 0 V, IC=1mA
*hFE3 75 - - VCE=10V, IC=10mA
*hFE4 100 - 300 VCE=10V, IC=150mA
*hFE5 40 - - VCE=10V, IC=500mA
*hFE6 50 - - VCE=1V, IC=150mA
fT 300 - - MHz VCE=20V, IC=20mA, f =100MHz
Cob - - 8 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HPN2222A HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6118
Issued Date : 1992.10.23
Revised Date : 2002.04.15
Page No. : 2/4
1000
Cur rent Ga in & C ollector Current
75oC125oC
25oC
100
hFE
hFE @ VCE=1V
10
0.1 1 10 100 1000
1000
100
Saturat ion Volta ge ( m V)
Sat urati on Voltage & Col lector Current
CE(sat)
V
125oC
Collector Current-IC (mA)
B
@ IC=10I
75oC
25oC
1000
Current Gain & Collect or Cu rrent
75oC125oC
25oC
100
hFE
hFE @ VCE=10V
10
0.1 1 10 100 1000
10000
1000
100
Saturat ion Volta ge ( m V)
Sat urati on Voltage & Col lector C urrent
Collector Current-IC (mA)
CE(sat)
V
@ IC=38I
125oC
B
75oC
25oC
10
0.1 1 10 100 1000
Collector Current-IC (mA)
Sat urati on Voltage & Col lector Cur rent
10000
BE(sat)
V
1000
Satur ation Voltag e ( mV)
100
25oC
125oC
0.1 1 10 100 1000
B
@ IC=10I
75oC
Collector Current-IC (mA)
10
1 10 100 1000
100
10
Capacitance (pF)
1
Capacitance & R everse- Biased Volta ge
0.1 1 10 100 1000
Collector Current-IC (mA)
Cob
Reverse Biased Vol t ag e ( V)
HPN2222A HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6118
Issued Date : 1992.10.23
Revised Date : 2002.04.15
Page No. : 3/4
1000
100
10
Cutoff Frequency (MHz)...
1
Cut off Fr equency & Coll ector Curr ent
fT
1 10 100 1000
Collector Current (mA)
PD-Ta
700
600
500
10000
PT=1ms
PT=100ms
1000
(mA)
C
100
Collector Current-I
PT=1s
10
1
1 10 100
Safe Operati ng Area
Forwar d Biased Vol t age - VCE (V)
400
300
200
Power Dissipation-PD (mW)
100
0
0 50 100 150 200
Ambient Temper atur e-Ta (oC)
HPN2222A HSMC Product Specification
Page 4
HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6118
Issued Date : 1992.10.23
Revised Date : 2002.04.15
Page No. : 4/4
A
α2
B
31
2
Marking:
HN
P
222
2A
Date Code Control Code
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
DIM
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
α1
α2
α3
*: Typical
Min. Max. Min. Max.
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HPN2222A HSMC Product Specification
Loading...