Datasheet HPMX-3002, HPMX-3002-T10 Datasheet (HP)

6-76

Silicon Bipolar RFIC 900 MHz Driver Amplifier

Technical Data

HPMX-3002

Features

• RFIC Medium Power Amplifier

• 150-960 MHz Operating Range

• +22 dBm Typ. P

ldB

, +23 dBm

Typ. P

sat

@ 900 MHz

• 50 dB Typ. Power Control Range

• 6 V, 160 mA Operation

• S0-8 Surface Mount Package with Improved Heatsinking

Applications

• Driver Amplifier for GSM Cellular Handsets

• Driver or Output Stage for 900 MHz ISM Band Transmitters

• Driver or Output Stage for Transmitters Operating in the 150-960 MHz Range

Plastic S0-8 Package

Pin Configuration

Description

Hewlett-Packard’s HPMX-3002 is a silicon microwave monolithic integrated circuit driver amplifier housed in a S0-8 surface mount plastic package. It operates over the 150 - 960 MHz frequency range, and at 900 MHz it produces +23 dBm of saturated output power, has 30 dB of small signal gain and a 50 dB power control range. The amplifier has a wellmatched input, and an open collector output which provides good linearity and efficiency and is easy to externally match to 50

Ω for optimal power output.

This device is well suited as a driver amplifier for European GSM (Global System for Mobile communications) portable and mobile telephone systems, or as the output stage for other low cost applications such as 900 MHz ISM band spread-spectrum.

The HPMX-3002 is fabricated with Hewlett-Packard’s 15 GHz f

t

ISOSAT-II process, which combines stepper lithography, ion implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability .

Functional Block Diagram

1

2

3

4

8

7

6

5

GROUND AND THERMAL CONTACT

V

CC1

GROUND

RF

IN

GROUND AND THERMAL CONTACT

RF

OUT

AND V

CC2

POWER CONTROL

(4)

RF

IN

(1, 3, 7, 8) GROUND

(5) POWER CONTROL

(6) RF

OUT

AND V

CC2

(3RD STAGE BIAS, OPEN COLLECTOR)

(2) V

CC1

(1ST AND 2ND STAGES)

5965-9661E

6-77

HPMX-3002 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

[1]

P

diss

Power Dissipation

[2,3]

mW 1400

P

in

Input Power dBm +5

V

CC

[1]

Supply Voltage V 8

V

CC

[2]

Supply Voltage, 3rd Stage V 12

V

cont

Control Voltage V 5

T

j

Junction Temperature °C 150

T

STG

Storage Temperatuere °C -65 to 150

Thermal Resistance

[2]

:

Θjc = 66° C/W

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. T

c

= 25 °C (T

c

is defined to be the temperature at the ends of pin 7 where it contacts the circuit board).

3. Derate at 15.2 mW/°C for TC > 58°C.

HPMX-3002 Guaranteed Electrical Parameters, T

C

= 37° C, ZO = 50 Ω

V

CC1

= 4.5 V, V

CC2

= 6 V, PIN = - 6 dBm @ 900 MHz, output matched for maximum power

I

CC1

= 65 mA nom., I

CC2

= 95 mA nom. set by V

cont

(pin 5) = 2.2 V (unless otherwise noted).

Symbol Parameters and Test Conditions Units Min. Typ. Max.

P

out

Output Power PIN = -6 dBm, f = 900 MHz dBm 22 23

PCR Power Control Range f = 900 MHz, dBm 40 50

V

cont

= 0 to 2.2 V

I

CC 1

Driver Stages Current V

CC 1

= 4.5 V mA 65 75

I

CC 2

Output Stage Current V

CC 2

= 6 V mA 95 120

HPMX-3002 Summary Characterization Information, T

C

= 37° C, ZO = 50 Ω

V

CC1

= 4.5 V, V

CC2

= 6 V, Pin = -6 dBm @ 900 MHz, output matched for maximum power

I

CC1

= 65 mA nom., I

CC2

= 95 mA nom. set by V

cont

(pin 5) = 2.2 V (unless otherwise noted).

Symbol Parameters and Test Conditions Units Typ.

P

1dB

Output Power at 1 dB Gain PIN set for P

out

= P 1 dB, dBm 22

Compression f = 900 MHz

G

ss

Small Signal Gain f = 900 MHz, P

in

= -18 dBm dB 32

IP

3

Third Order Intercept Point f1 = 900 MHz, f2 = 901 MHz dBm 29

P

out

per tone = 12 dBm

IP

5

Fifth Order Intercept Point f1 = 900 MHz, f2 = 901 MHz dBm 24

P

out

per tone = 12 dBm

NF Noise Figure dB 9.5

VSWR

in

Input Voltage Standing Wave Ratio - 1.5:1

I

cont

Control Current V

cont

= 0 to 2.2V mA 2.5

6-78

HPMX-3002 Pin Description

Ground (pins 1,3,7,8): This RFIC is ground sensitive. A short path to ground with minimal parasitics must be provided on all ground leads to prevent stability problems. The PC board should be 0.032" or less in thickness. Multiple vias should be placed near the ground leads. Failure to properly ground this device can lead to positive return gain and possible stability problems. We suggest performing a stability analysis using the device s parameters and a description of the inductance of your ground path. A recommended board layout is shown on the final page of this data sheet. Pins 7 and 8 also provide the primary thermal path for heatsinking the device.

V

CC1

(pin 2): This pin provides the DC bias for the amplifier driver stages, and

has an operating range of 4.5 to 6 V (5 V nominal). It should be bypassed close to RFIC body using a 1000 pF capacitor.

RF

in

(pin 4):

The impedance of this RFIC is

well matched to 50 Ω from 100

MHz to 1100 MHz. Normally, no additional impedance matching is required. S-parameters are provided should the designer need to “fine tune” the input match. Pin 4 must be AC coupled to generator (1000 pF typ. blocking capacitor). The nominal drive level is -6 dBm, and under normal operating conditions should not exceed 0 dBm.

Control (pin 5): Applying a DC voltage to this pin adjusts the gain of the last 2 stages of the RFIC over a 50 dB range. Pin 5 has an operational

range of 0 to 2.5 V. The power control function is designed for operation in the 800 - 1000 MHz frequency range, and decreases in adjustment capability at lower frequencies – refer to the performance graphs (figure 3).

RF

out

and V

CC2

(Pin 6): Pin 6 connects to the open collector of the output stage. A power match is required at this pin. The typical match for operation between 800 and 1000 MHz consists of a shunt L (8 nH typ.) and a series C (27 pF typ.), with the series C also serving as the blocking capacitor. The s parameter data should be used to generate matches for other frequency bands.

Figure 1. HPMX-3002 Typical 900 MHz Amplifier Use.

27 pF

TRANSMISSION LINES ARE 50 Ω

PIN:

1827364

5

1000 pF

RFIN (50 Ω)

1000 pF

V

CC1

(4 TO 6 V,

65 mA NOM.)

V

CC2

(4 TO 8 V, 95 mA NOM.)

1000 pF

8 nH

RF

OUT

(50 Ω)

OUTPUT POWER CONTROL VOLTAGE (2.2 V, 2.5 mA TYP.)

6-79

HPMX-3002 Typical Performance, T

C

= 37° C, ZO = 50 Ω

Pin = -6 dBm @ 900 MHz, V

CC1

= 4.5 V, V

CC2

= 6 V, V

control

= 2.2 V, I

CC1

= 66 mA, I

CC2

= 95 mA nom.

Output matched for max. P

out

@ 900 MHz (unless otherwise noted)

Figure 8. HPMX-3002 one dB Compressed Power and Small Signal Gain vs. Frequency and Temperature.

Figure 9. HPMX-3002 Intermodulation Distortion vs. Output Power and Temperature with V

control

= 2.0 V.

Figure 10. HPMX-3002 Intermodulation Distortion vs. Control Voltage and V

CC1

for P

out

per tone = 12 dBm.

GAIN (dB)

840

25

FREQUENCY (MHz)

880 920

40

35

30

960

S

21

-40 +37

P

1dB

(dBm)

21

24

23

22

P

1dB

+85

+37

-40

INTERMODULAITON (dBc)

4

-80

P

OUT

PER TONE (dBm)

812

-40

-50

-60

-70

14

-30

+85

+37

-40

IM3

610

+85

+37

-40

IM5

INTERMODULAITON (dBc)

1.8 V

CONTROL

(V)

2

-40

-50

-60

2.2

-30

5.5 V

IM3

1.9 2.1

IM5

5.0 V

4.5 V

5.5 V

5.0 V

4.5 V

Figure 2. HPMX-3002 Output Power and Current vs. Frequency and Temperature.

Figure 3. HPMX-3002 Output Power vs. Frequency and Control Voltage.

Figure 4. HPMX-3002 Output Power and Current vs. Control Voltage and Temperature.

P

OUT

(dBm)

0

-40

FREQUENCY (MHz)

200 400 600 800

10

0

-10

-20

-30

1000

2.2 V

2.0 V

1.8 V

1.6 V

1.4 V

1.2 V

1.0 V

0.8 V

0.6 V

0.4 V

0.2 V

20

30

NOISE FIGURE (dB)

0

8

FREQUENCY (MHz)

200 400 600 800

18

16

14

12

10

1000

5.5 V

5.0 V

4.5 V

Figure 5. HPMX-3002 Output Power vs. Supply Voltage.

Figure 6. HPMX-3002 Current vs. Output Power and Temperature.

Figure 7. HPMX-3002 Noise Figure vs. Frequency and V

CC1

.

P

OUT

(dBm)

0

15

FREQUENCY (MHz)

200 400 600 800

25

23

21

19

17

1000

CURRENT

(mA)

50

150

130

110

90

70

P

OUT

I

CC2

I

CC1

+85 +37

-40

+85 +37

-40

+85 +37

-40

P

OUT

(dBm)

0

-40

CONTROL VOLTAGE (V)

0.5 1 1.5 2

10

0

-10

-20

-30

2.5

20

30

0

100

80

60

40

20

120

140

CURRENT (mA)

P

OUT

I

CC2

I

CC1

+85

+37

-40 +85

-40

+85

+37

P

OUT

(dBm)

4.5

20

V

CC1

(V)

4.7 4.9 5.1 5.3

24

23

22

21

5.5

25

6 V 5 V

7 V

8 V

V

CC2

CURRENT (mA)

-40

0

P

OUT

(dBm)

-30 -20 -10 0

80

60

40

20

30

100

-40

+37

+85

I

CC2

I

CC1

-40

+37

+85

10 20

6-80

Figure 14. HPMX-3002 Test Circuit Configuration.

RETURN LOSS (dB)

0

50

FREQUENCY (MHz)

400 800

10

20

30

40

1000

0

200 600

Figure 11. HPMX-3002 Input Return Loss vs. Frequency.

Figure 13. HPMX-3002 Stage Current vs. Supply Voltage with V

CC1

= 4.5 V.

Figure 12. HPMX-3002 Output Return Loss vs. Frequency.

1

2

3

4

8

7

6

5

1000 pF

ALL TRANSMISSION LINES

ARE 50 Ω

P

IN

= -6 dBm

1000 pF

V

CC1

= 4.5 V V

CC2

= 6 V

PIN: BIAS

TEE

1000 pF

1.8 pF

V

CONTROL

= 2.2 V

RF

OUT

(50 Ω)

3 nH

RETURN LOSS (dB)

0

40

FREQUENCY (MHz)

400 800

10

20

30

1000

0

200 600

CURRENT (mA)

0

V

CC2

(VOLTS)

400 800

120

90

30

1000

150

200 600

60

I

CC2

I

CC1

6-81

HPMX-3002 Typical Scattering Parameters, T

C

= 37° C, ZO = 50 Ω V

control

= 1.6 V

V

CC1

= 4.5 V, V

CC2

= 6 V

Freq S

11

S

21

S

12

S

22

k

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.10 0.33 151 42.89 139.44 -138 -60.00 0.001 143 0.91 -25 0.77

0.20 0.34 92 44.16 161.44 143 -53.98 0.002 152 0.75 -53 0.82

0.30 0.31 51 42.95 140.50 98 -53.98 0.002 146 0.65 -67 1.10

0.40 0.31 18 42.06 126.79 63 -47.96 0.004 148 0.65 -76 0.77

0.50 0.29 -14 41.91 124.61 29 -44.44 0.006 141 0.73 -89 0.65

0.60 0.23 -52 42.12 127.67 -10 -40.92 0.009 143 0.85 -107 0.62

0.70 0.09 -117 41.62 120.47 -60 -38.42 0.012 138 0.88 -136 0.73

0.80 0.06 66 38.19 81.23 -106 -37.08 0.014 135 0.65 -162 0.84

0.90 0.16 42 34.23 51.44 -144 -35.92 0.016 131 0.41 -179 0.94

1.00 0.19 11 29.87 31.15 -169 -33.98 0.020 130 0.31 -170 1.04

1.10 0.21 6 26.42 20.93 -165 -32.40 0.024 127 0.25 -164 1.14

HPMX-3002 Typical Scattering Parameters, T

C

= 37° C, ZO = 50 Ω V

control

= 2.0 V

V

CC1

= 4.5 V, V

CC2

= 6 V

Freq S

11

S

21

S

12

S

22

k

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.10 0.33 143 45.90 197.18 -158 -60.00 0.001 153 0.85 - 31 0.85

0.20 0.31 83 45.15 180.94 128 -60.00 0.001 99 0.63 - 56 1.78

0.30 0.28 43 43.46 148.88 88 -53.98 0.002 142 0.56 - 65 1.26

0.40 0.27 11 42.43 132.22 55 47.96 0.004 138 0.60 - 74 0.87

0.50 0.25 -21 42.15 128.14 22 -44.44 0.006 147 0.70 - 88 0.67

0.60 0.19 -63 42.13 127.82 -17 -41.94 0.008 143 0.80 -108 0.61

0.70 0.05 -144 41.26 115.62 -64 -39.17 0.011 135 0.81 -138 0.73

0.80 0.09 61 37.86 78.15 -107 -37.72 0.013 135 0.59 -161 0.86

0.90 0.17 38 34.07 50.54 -144 -35.92 0.016 131 0.39 -178 0.95

1.00 0.19 12 29.89 31.23 -168 -33.98 0.020 132 0.30 -169 1.04

1.10 0.21 6 26.54 21.22 166 -32.40 0.024 127 0.24 -164 1.14

6-82

HPMX-3002 Typical Scattering Parameters, T

C

= 37° C, ZO = 50 Ω V

control

= 2.2 V

V

CC1

= 4.5 V, V

CC2

= 6 V

Freq S

11

S

21

S

12

S

22

k

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.10 0.26 122 46.64 214.70 160 -60.00 0.001 111 0.58 -30 1.70

0.20 0.18 67 43.80 154.92 99 -60.00 0.001 133 0.49 -33 2.53

0.30 0.15 30 41.76 122.46 65 -53.98 0.002 139 0.52 -40 1.64

0.40 0.12 -1 40.36 104.17 38 -50.46 0.003 149 0.59 -52 1.22

0.50 0.08 -30 39.64 95.89 6 -44.44 0.006 148 0.66 -68 0.79

0.60 0.02 -112 39.17 90.91 -29 -41.94 0.008 142 0.71 -89 0.70

0.70 0.13 92 38.03 79.70 -71 -40.00 0.010 137 0.65 -114 0.75

0.80 0.19 51 35.15 57.23 -109 -37.72 0.013 135 0.50 -131 0.88

0.90 0.23 34 32.04 39.99 -142 -35.92 0.016 134 0.34 -143 0.99

1.00 0.24 11 28.44 26.42 -168 -34.43 0.019 132 0.29 -139 1.11

1.10 0.24 4 25.49 18.82 166 -32.77 0.023 129 0.34 -137 1.15

Package Dimensions

S0-8 Package

PIN:

0.20 (0.008)

0.10 (0.004)

0.45 (0.018)

0.35 (0.014)

1.27

(0.050)

TYP

5.20 (0.205)

4.60 (0.181)

0.254 (0.010)

0.15 (0.007)

0 DEG MIN

8 DEG MAX

1.75 (0.069)

1.35 (0.053)

4.00 (0.158)

3.80 (0.150)

6.20 (0.244)

5.80 (0.228)

5.00 (0.197)

4.80 (0.188)

NOTE: DIMENSIONS ARE IN MILLIMETERS (INCHES).

0.77 (0.030)

0.64 (0.025)

1234

8765

Part Number Ordering Information

Part Number Option No. of Devices Container

HPMX-3002 - 100 Tube

HPMX-3002 #T10 1000 Reel

6-83

HPMX-3002 Test Board Layout

Finished board size: 1.5" x 1.5" x 1/32" Material: 1/32" epoxy/fiberglass, 1 oz. copper, both sides, tin/lead coating, both sides. Note: “.” marks indicate drilling locations for plated-through via holes to the groundplane on the bottom side of the board. Board layed out for coil-craft #AO3T 8 nH spring-coil inductor.

OUT POWER

CONTROL

V

CC2

HPMX-3002

V

CC1

IN

H

1

OUT

POWER

CONTROL

V

CC2

HPMX-3002

C

IC

V

CC1

IN

1

H

C

L