Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and
amplifier applicati ons.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
Features
• Low Collector Saturation Voltage
• High speed switching Transistor
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 15 - - V IC=10mA, IB=0
BVCES 40 - - V IC=10uA, VBE= 0
BVEBO 4.5 - - V IE=10uA, IC=0
ICBO - - 400 nA VCB=20V, IE=0
ICES - - 300 nA VCE=25V, VBE=0
IEBO - - 100 nA VEB=2V, IC=0
*VCE(sat)1 - - 250 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 300 mV IC=10mA, IB=0.3mA
*VCE(sat)3 - - 600 mV IC=100mA, IB=10mA
*VBE(sat)1 700 - 850 mV IC=10mA, IB=1mA
*VBE(sat)2 - - 1.5 V IC=100mA, IB=1mA
*hFE1 40 80 120 IC=10mA, VCE=1V
*hFE2 20 - - IC=100mA, VCE=2V
fT 500 - - MHz IC=10mA, VCE=10V, f=100MHZ
Cob - - 4 pF VCB=5V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HPH2369 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 2/4
100
Current Gain & Collector Current
125oC
25oC
75oC
10
hFE
hFE @ VCE=1V
1
1 10 100 1000
100000
10000
Collector Current-IC (mA)
Sat urati on Voltage & Collector Curren t
100
125oC
25oC
75oC
10
hFE
hFE @ VCE=2V
1
0.1 1 10 100 1000
Collector Current- IC (mA)
Sat urati on Voltage & Coll ector Cu rrent
10000
1000
Current Gai n & Collector Cu rrent
1000
Saturat ion Volta ge ( m V)
100
10
0.1 1 10 100 1000
125oC
25oC
Collector Current-IC (mA)
75oC
CE(sat)
V
Sat urati on Voltage & Coll ector Cu rrent
10000
75oC
1000
Saturation Voltage (mV)
25oC
125oC
BE(sat)
V
@ IC=10I
@ IC=33I
75oC
100
Saturation Voltage (mV)
B
10
0.1 1 10 100 1000
1
On Voltage ( m V)
B
125oC
25oC
Collector Current-IC (mA)
CE(sat)
V
On Voltage & Collector Current
BE(on)
V
@ VCE=1V
@ IC=10I
B
100
0.1 1 10 100 1000
Collector Current-IC (mA)
0.1
0.1 1 10 100
Collector Current (mA)
HPH2369 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 3/4
10
Capacitance (pF)
1
10000
1000
(mA)
C
Capacitance & Reverse-Biased Voltage
Cob
0.1 1 10 100
Reverse-Biased Vol tage (V)
Safe Operating Area
PT=1ms
PT=100ms
100
PT=1s
10000
1000
(GHz)
100
10
Cutoff Frequency
1
0.1
1 10 100
Collect o r Current- IC (mA)
fT @ VCE=10V
PD-Ta
700
600
500
400
300
Cutoff Frequency & Collector Current
10
Collector Current-I
1
1 10 100
Forwar d Voltage-VCE (V)
200
Power Dissipation-PD (mW)
100
0
0 50 100 150 200
Ambient Temper a t ure-Ta (oC)
HPH2369 HSMC Product Specification
Page 4
HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 4/4
A
α2
B
31
2
Marking:
HH
P
326
9
Date Code Control Code
α3
C
D
H
I
α1
G
Style: Pin 1.Collector 2.Base 3.Emitter
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HPH2369 HSMC Product Specification
Loading...