Datasheet HMC337 Datasheet (Hittite)

MICROWAVE CORPORATION

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

5

Typical Applications

18 and 23 GHz Microwave Radios
Up and Down Converter for

Point to Point Radios
Satellite Communication Systems

Functional Diagram

PUMPED MIXER 17 - 25 GHz

Features

Integrated LO Amplifier: -5 dBm Input
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: > 25 dB
Small Size: 0.97mm x 1.32mm

General Description

The HMC337 chip is a sub-harmonically pumped
(x2) MMIC mixer with an integrated LO amplifier
which can be used as an upconverter or down­converter. The chip utilizes a GaAs PHEMT tech­nology that results in a small overall chip area of

1.28mm2. The 2LO to RF isolation is excellent
eliminating the need for additional filtering. The
LO amplifier is a single bias (+3V to +4V) two
stage design with only -5 dBm nominal drive
requirement. All data is measured with the chip
in a 50 ohm test fixture connected via 0.076 mm
(3 mil) ribbon bonds of minimal length <0.31 mm
(<12 mils).

MIXERS - CHIP

Guaranteed Performance, As a Function of Vdd, 25 Deg °C

FRotOL2sInoitalo0103-520103-52Bd

otOL2FIsInoitalo7205-040305-04Bd

PI)tupnI(330129mBd

* Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.

5 - 26

FIzHG1=

retemaraP

.niM.pyT.xaM.niM.pyT.xaM

FR,egnaRycneuqerF52-7142-81zHG

OLegnaRycneuqerF5.21-5.821-9zHG

,egnaRycneuqerFFI3-CD3-CDzHG

ssoLnoisrevnoC931931Bd

)BSS(erugiFesioN931931Bd

(noisserpmoCBd1nI)tup5-0 6-1-mBd

)ddV(egatloVylppuS0.40.3cdV

(tnerruCylppuSdI)d8252Am

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

V4+=ddV&mBd5-=OL

FIzHG1=

V3+=ddV&mBd5-=OL

stinUretemaraP

stinU

MICROWAVE CORPORATION

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

PUMPED MIXER 17 - 25 GHz

Conversion Gain vs.

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Temperature @ LO = -5 dBm, Vdd= +4V

0

-4

-8

-12

+ 25 C

CONVERSION GAIN (dB)

-16

-20
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

+ 85 C

- 55 C

Conversion Gain
vs. LO Drive @ Vdd = +4V

0

-4

-8

Conversion Gain vs.
Temperature @ LO = -5 dBm, Vdd= +3V

0

-4

-8

-12

+ 25 C

CONVERSION GAIN (dB)

-16

-20
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

+ 85 C

- 55 C

Conversion Gain
vs. LO Drive @ Vdd = +3V

0

-4

-8

5

-12

- 7 dBm

CONVERSION GAIN (dB)

-16

-20
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

- 5 dBm

- 3 dBm

-12

-7 dBm

CONVERSION GAIN (dB)

-16

-20
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

-5 dBm

-3 dBm

Isolation @ LO = -5 dBm, Vdd = +4V Isolation @ LO = -5 dBm, Vdd = +3V

0

-10

-20

-30

-40

CONVERSION LOSS (dB)

-50

-60
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF

0

-10

-20

-30

-40

CONVERSION LOSS (dB)

-50

-60
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF

MIXERS - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

5 - 27

MICROWAVE CORPORATION

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

5

PUMPED MIXER 17 - 25 GHz

Input IP3 vs. LO Drive @ Vdd = +4V * Input IP3 vs. LO Drive @ Vdd = +3V *

20

16

12

8

4

THIRD ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

Input IP3 vs. Temperature
@ LO = -5 dBm, Vdd = +4V *

20

16

-7 dBm

-5 dBm

-3 dBm

+ 25 C
+ 85 C

- 55 C

20

16

12

8

4

THIRD ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

Input IP3 vs. Temperature
@ LO = -5 dBm, Vdd = +3V *

20

16

-7 dBm

-5 dBm

-3 dBm

+ 25 C
+ 85 C

- 55 C

12

8

4

MIXERS - CHIP

THIRD ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

Input IP2 vs. LO Drive @ Vdd = +4V * Input IP2 vs. LO Drive @ Vdd = +3V *

60

50

40

30

20

10

SECOND ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

-7 dBm

-5 dBm

-3 dBm

12

8

4

THIRD ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

60

50

40

30

20

10

SECOND ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

-7 dBm

-5 dBm

-3 dBm

5 - 28

* Two-tone input power = -10 dBm each tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

MICROWAVE CORPORATION

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

Input IP2 vs. Temperature
@ LO = -5 dBm, Vdd = +4V *

60

50

40

30

20

10

SECOND ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

Input P1dB vs. Temperature
@ LO = -5 dBm, Vdd = +4V

10

8
6
4
2
0

-2

P1dB (dBm)

-4

-6

-8

-10
19 20 21 22 23 24 25

+ 25 C
+ 85 C

- 55 C

FREQUENCY (GHz)

+ 25 C
+ 85 C

- 55 C

PUMPED MIXER 17 - 25 GHz

Input IP2 vs. Temperature
@ LO = -5 dBm, Vdd = +3V *

60

50

40

30

20

10

SECOND ORDER INTERCEPT (dBm)

0

19 20 21 22 23 24 25

FREQUENCY (GHz)

Input P1dB vs. Temperature
@ LO = -5 dBm, Vdd = +3V

10

8
6
4
2
0

-2

P1dB (dBm)

-4

-6

-8

-10
19 20 21 22 23 24 25

FREQUENCY (GHz)

+25 C
+ 85 C

- 55 C

+ 25 C
+ 85 C

- 55 C

5

MIXERS - CHIP

RF & LO Return Loss
@ LO = -5 dBm, Vdd = +4V

0

-5

-10

RETURN LOSS (dB)

-15

-20
0 5 10 15 20 25 30 35 40

FREQUENCY (GHz)

* Two-tone input power = -10 dBm each tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

LO
RF

IF Return Loss
@ LO = -5 dBm, Vdd = +4V

0

-5

-10

-15

-20

-25

RETURN LOSS (dB)

-30

-35

-40
0 0.5 1 1.5 2 2.5 3 3.5 4

FREQUENCY (GHz)

IF

5 - 29

MICROWAVE CORPORATION

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

5

IF Bandwidth @ LO = -5 dBm

0

-4

-8

-12

CONVERSION GAIN (dB)

-16

-20
0 0.5 1 1.5 2 2.5 3 3.5 4

FREQUENCY (GHz)

Absolute Maximum Ratings

Vdd=3V
Vdd=4V

)V5+=ddV(tupnIFI/FRmBd31+

)V5+=ddV(evirDOLmBd31+

PUMPED MIXER 17 - 25 GHz

Upconverter Performance
Conversion Gain, LO = -5 dBm Vdd = +4V

0

-4

-8

-12

CONVERSION GAIN (dB)

-16

-20
16 17 18 19 20 21 22 23 24 25 26

FREQUENCY (GHz)

Vdd=3V
Vdd=4V

MIXERS - CHIP

MXN Spurious @ IF Port
Outputs @ LO = -5 dBm Vdd = +4V

FRm5±4±3±2±1±0
3­2-16
1-951325

032435-

1X7491
294846706
3881759

mBd01-@zHG22=FR

mBd5-@zHG5.01=OL

ddVV5.5

)C°58=aT(ssidPsuonitnoC

)C°58evobaC°/Wm46.2etared(

erutarepmeTegarotSCged051+ot56-

erutarepmeTgnitarepOCged58+ot55-

Wm832

MXN Spurious @ RF Port
Outputs @ LO = -5 dBm Vdd = +4V

OLn

FIm5±4±3±2±1±0
3-656884201
2-56529535

1-33x84

001-619-

173x3471

203050416
377750866

mBd01-@zHG1=FI

.levelrewopFIwolebcBdniseulavllA

.retrevnocnwodsaderusaeM

mBd5-@zHG5.01=OL

.retrevnocpusaderusaeM

OLn

.levelrewopFRwolebcBdniseulavllA

5 - 30

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

MICROWAVE CORPORATION

v00.0301

GaAs MMIC SUB-HARMONICALLY

Pad Locations & Outline Drawing

HMC337

PUMPED MIXER 17 - 25 GHz

ALL DIMENSIONS IN INCHES (MILLIMETERS)
ALL TOLERANCES ARE ±0.001 (0.025)
DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
BOND PADS ARE 0.004 (0.100) SQUARE
BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
BACKSIDE METALLIZATION: GOLD
BOND PAD METALLIZATION: GOLD

5

Pad Description

rebmuNdaPnoitcnuFnoitpircseDcitamehcSecafretnI

1ddVssapybFRlanretxenA.reifilpmAOLehtrofylppusrewoP

2troPFR morfmho05otdehctamdnadelpuocCAsidapsihT.troPFR

3troPFI dekcolbCDebdluohsdnadelpuocCDsidapsihT.troPFI

4troPOL morfmho05otdehctamdnadelpuocCAsidapsihT.troPOL

MIXERS - CHIP

siroticapacredrobMIMA.deriuqersiFp033-001foroticapac

saebdluohsroticapacehtothtgneldnobehT.dednemmocer

ebdluohsroticapacehtfoedisdnuorgehT.elbissopsatrohs

.dnuorggnisuohehtotdetcennoc

.zHG03-51

neebsaheulavesohwroticapacseiresagnisuyllanretxe

deilppaynA.egnarycneuqerfFIyrassecenehtssapotnesohc

dnanoitcnuf-noneidnitluserlliwnipsihtotegatlovCD

.eruliafeidelbissop

zHG21-8

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

5 - 31

MICROWAVE CORPORATION

3 mil Ribbon Bond

3 mil Ribbon Bond

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

5

PUMPED MIXER 17 - 25 GHz

Assembly Diagrams

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han­dling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring­ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thic k molybden um heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).

MIXERS - CHIP

Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical
die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.

3 mil Ribbon Bond

3 mil Ribbon Bond

5 - 32

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

MICROWAVE CORPORATION

v00.0301

HMC337

GaAs MMIC SUB-HARMONICALLY

PUMPED MIXER 17 - 25 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness:

Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity:

Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).

Transients:

Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.

General Handling:

Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweez ers, or fingers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.

5

Eutectic Die Attach:

A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temper ature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.

Epoxy Die Attach:

Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.

Wire Bonding

RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with
a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball
bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 gr ams. All bonds should be made with a
nominal stage temperature of 150 deg. C . A minim um amount of ultrasonic energy should be applied to achie ve reliab le
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

MIXERS - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

5 - 33