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MICROWAVE CORPORATION
FEBRUARY 2001
HMC259
GaAs MMIC SUB-HARMONICALL Y PUMPED MIXER 28 - 40 GHz
Features
SUB-HARMONICALLY PUMPED (x2) LO
HIGH 2LO/RF ISOLATION: > 35dB
SMALL SIZE: 1.24mm x 1.55mm
IDEAL FOR 38 GHz RADIOS, E1 & T1
4
MIXERS
General Description
The HMC259 chip is a broadband sub-harmonically pumped (x2) balanced MMIC passive mixer
which can be used as an upconverter or
downconverter. The chip utilizes a GaAs MESFET
process resulting in a small overall chip area of
1.9mm
of DC-13 GHz. The 2LO to RF isolation is
excellent eliminating the need for additional filtering . This mixer chip is designed to be used in
38GHz point to point radios, Local Multi-Point
Distribution Systems (LMDS), and SATCOM applications. All data is with the chip in a 50 ohm test
fixture connected via 0.025 mm (1 mil) diameter
wire bonds of minimal length <0.31 mm (<12
mils). This device is a much smaller and more
reliable replacement to hybrid diode mixer designs.
2
. This chip has a very wide IF bandwidth
Guaranteed Performance*, LO Drive=+15dBm, - 55 to + 85 deg C
DIE
Parameter
IF = 1 GHz
IF = 1 GHz
Units
Min. Typ. Max. Min. Typ. Max.
Frequency Range, RF 28 - 40 36 - 40 GHz
Frequency Range LO 14 - 20 18 - 20 GHz
Frequency Range, IF DC - 12 DC - 4 GHz
Conversion Loss 14 17 12 15 dB
NoiseFigure(SSB) 14 17 12 15 dB
2 LO to RF Isolation 28 35 40 50 dB
2 LO to IF Isolation 58 65 63 68 dB
RF to IF Isolation 25 30 25 32 dB
LO to IF Isolation 10 15 12 17 dB
IP3 (Input) 2 5 2 6 dBm
1 dB C ompression (Input) -7 -4 -7 -1 dBm
Local Oscillator Drive Level +13 +15 +18 +13 +15 +18 dBm
* Configured as a downconverter
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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MICROWAVE CORPORATION
HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz
new!
HMC259
FEBRUARY 2001
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Conversion Gain vs. Temperature
@ LO = +15 dBm
0
-5
-10
-15
CONVERSION GAIN (dB)
-20
-25
24 26 28 30 32 34 36 38 40
-55 C
RF FREQUENCY(GHz)
+25 C
+85 C
Conversion Gain vs. LO Drive
0
-5
-10
-15
-20
CONVERSION GAIN (dB)
-25
-30
24 26 28 30 32 34 36 38 40
+16 dBm
RF FREQUENCY(GHz)
+15 dBm
+13 dBm
+14 dBm
Isolation @ LO = +15 dBm
0
RF/LO
-20
-40
ISOLATION (dB)
-60
-80
24 26 28 30 32 34 36 38 40
RF/IF
2LO/IF
RF FREQUENCY (GHz)
LO/IF
2LO/RF
Return Loss @ LO = +15 dBm
0
-5
-10
-15
-20
-25
RETURN LOSS(dB)
-30
-35
-40
0 5 10 15 20 25 30 35 40
IF
LO & RF
FREQUENCY (GHz)
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MIXERS
DIE
Upconverter Performance
IF Bandwidth @ LO =+15dBm
0
-5
-10
-15
-20
IF CONVERSION GAIN (dB)
-25
-30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IF FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
Conversion Gain @ LO = +15dBm
0
-5
-10
-15
-20
CONVERSION GAIN (dB)
-25
-30
24 26 28 30 32 34 36 38 40
RF FREQUENCY (GHz)
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MIXERS
MICROWAVE CORPORATION
HMC259 SUB-HARMONICALL Y PUMPED MIXER 28 - 40 GHz
FEBRUARY 2001
Input IP3 vs. LO Drive
20
16
12
8
4
THIRD ORDER INTERCEPT (dBm)
0
+14 dBm
24 26 28 30 32 34 36 38 40
Input IP2 vs. LO Drive
60
50
40
30
+16 dBm
+16 dBm
+15 dBm
RF FREQUENCY (GHz)
+14 dBm
HMC259
Input IP3 vs. Temperature
@ LO = 0 dBm
20
16
12
8
4
THIRD ORDER INTERCEPT (dBm)
0
24 26 28 30 32 34 36 38 40
Input IP2 vs. Temperature
@ LO = 0 dBm
60
50
40
30
+85 C
+25 C
-55 C
RF FREQUENCY (GHz)
-55 C
+25 C
20
DIE
+15 dBm
10
SECOND ORDER INTERCEPT (dBm)
0
24 26 28 30 32 34 36 38 40
MXN Spurious Outputs
@ LO Drive = 0 dBm
mRF
-2 -37
RF = 30 GHz @ -15 dBm
LO = 14 GHz @ +15 dBm
All values in dBc below IF power level
±5 ±4 ±3 ±2 ±1 0
-3
-1 -46 -48 -22
0-28+29
1X-24-29
2-40-44-81
3-76
RF FREQUENCY (GHz)
nLO
20
10
SECOND ORDER INTERCEPT (dBm)
0
+85 C
24 26 28 30 32 34 36 38 40
RF FREQUENCY (GHz)
P1dB vs. Temperature
@ LO =+15 dBm
5
4
3
2
1
0
-1
P1dB (dBm)
-2
-3
-4
-5
-55 C
24 26 28 30 32 34 36 38 40
+85 C
+25 C
RF FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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MICROWAVE CORPORATION
HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz
new!
HMC259
FEBRUARY 2001
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Schematic
Absolute Maximum Ratings
RF
RF / IF Input +13 dBm
LO Drive +23 dBm
IF
Storage Temperature -65 to +150 deg C
Operating Temperature -55 to +85 deg C
LO
Outline Drawing ( See Die Handling, Mounting, Bonding Note Page 4-116)
RF
1.55
(0.061)
BACKSIDE
IS GROUND
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MIXERS
DIE
1.35
(0.053)
0.76
(0.030)
Hittite
LO
0.10
(0.004)
0.10
(0.004)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
0.15
(0.006)
1.04
(0.041)
1.24
(0.049)
IF
ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BOND PAD SPACING, CTR-CTR: 0.150 (0.006)
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD
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HMC259
MICROWAVE CORPORATION
HMC259 SUB-HARMONICALL Y PUMPED MIXER 28 - 40 GHz
FEBRUARY 2001
MIC Assembly Techniques for HMC259
MIXERS
Mounting & Bonding Techniques for Millimeterwave GaAs
MMICs
The die should be attached directly to the ground plane eutectically
DIE
or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick
alumina thin film substrates are recommended for bringing RF to
and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin
film substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the
substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as
possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
LO
Figure 3: Typical HMC259 Assembly
RF
IF
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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Page 6
HMC259
MICROWAVE CORPORATION
HMC259 SUB-HARMONICALL Y PUMPED MIXER 28 - 40 GHz
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
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Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
MIXERS
DIE
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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