Page 1
MICROWAVE CORPORATION
GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz
FEBRUARY 2001
HMC216MS8
4
MIXERS
SMT
Features
IP3 (INPUT): +25 dBm @ +11 dBm LO
LO RANGE = +3 to +11 dBm
CONVERSION LOSS: 8.5 dB
LO/RF ISOLATION: 35 dB
General Description
The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface
mount package (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel
planar transformer baluns on the chip. In addition to an LO drive of +3 to +13 dBm, a gate
voltage of Vgg= -0.9 to –1.6 Vdc is required. The
device can be used as an up, or downconverter
for 1900 or 2400 MHz applications. It is especially suited for miniature basestations, WLAN,
PCMCIA, and portable wireless applications.
The consistent MMIC performance will improve
system operation and assure regulatory compliance. The MSOP8 package is the smallest
footprint available for a complete double-balanced mixer, 0.118” x 0.190” (3.0mm x 4.9mm).
At a height of 0.040” (1.0mm) this is the thinnest
SMT FET mixer available today.
Guaranteed Perf ormance,
As a Function of LO Drive, IF = 175 MHz, Vgg = -1.2 Vdc, - 40 to + 85 deg. C
Parameter
Frequency Range, RF & LO 1.3 - 2.5 1.6 - 2.3 1.7 - 2.0 GHz
Frequency Range, IF DC - 0.65 DC - 0.5 DC - 0.4 GHz
Conversion Loss 9 10.5 8.5 10 9 10.5 dB
Noise Figure (SSB) 9 10.5 8.5 10 9 10.5 dB
LO to RF Isolation 27 30 27 32 27 32 dB
LO to IF Isolation 17 20 17 20 17 20 dB
IP3 (Input) Vgg = -1.5 Vdc 21 25 14 18 8 12 dBm
1 dB Gain Compression (Input) 8 11 5 10 3 8 dBm
Local Oscillator Drive Level 0 11 15 0 7 15 0 3 15 dBm
Gate Voltage (Vgg) -0.8 -1.8 -0.8 -1.8 -0.8 -1.8 Vdc
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 78
LO = +11 dBm LO = +7 dBm LO = +3 dBm
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Units
Page 2
MICROWAVE CORPORATION
GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz
Conversion Loss vs.
Temperature @ LO = +7 dBm
-6
-40 C
-8
-10
-12
-14
-16
-18
CONVERSION LOSS (dB)
-20
-22
1 1.5 2 2.5 3
FREQUENCY (GHz)
+85 C
+25 C
HMC216MS8
Isolation @ LO = +7 dBm
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
RF/IF
LO/IF
1 1.5 2 2.5 3
FREQUENCY (GHz)
LO/RF
FEBRUARY 2001
4
Conversion Loss vs. LO Drive
0
-5
+11 dBm
-10
+5 dBm
-15
CONVERSION LOSS (dB)
-20
1 1.5 2 2.5 3
+3 dBm
FREQUENCY (GHz)
IF Bandwidth @ LO = +7 dBm
0
-5
-10
-15
CONVERSION LOSS (dB)
-20
+9 dBm
+7 dBm
Return Loss @ LO = +7 dBm
0
-5
-10
-15
RETURN LOSS (dB)
-20
-25
0 0.5 1 1.5 2 2.5 3
RF
IF
FREQUENCY (GHz)
P1dB vs. Temperature for
LO = +7 dBm, Vgg = -1.2 Vdc
14
12
10
8
P1dB (dBm)
6
4
-40 C
+85 C
LO
MIXERS
SMT
+25 C
-25
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IF FREQUENCY (GHz)
2
1.2 1.4 1.6 1.8 2 2.2 2.4
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 79
Page 3
4
MIXERS
SMT
MICROWAVE CORPORATION
GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz
FEBRUARY 2001
Input IP3 vs. LO Drive and Vgg
30
25
+11 dBm
+9 dBm
20
+7 dBm
15
+5 dBm
THIRD ORDER INTERCEPT (dBm)
10
-1.6 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8
GATE VOLTAGE (V)
Input IP2 vs. Temperature
and Vgg for @ LO = +7 dBm
60
55
50
45
40
35
30
25
SECOND ORDER INTERCEPT(dBm)
20
-1.6 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8
+85C
GATE VOLTAGE (V)
HMC216MS8
Input IP3 vs. Temperature
and Vgg for @ LO = +7 dBm
23
22
21
20
19
18
+25C
17
16
THIRD ORDER INTERCEPT (dBm)
15
-1.6 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8
-40C
+85C
GATE VOLTAGE (V)
-40C
+25C
MXN Spurious Outputs
OLn
FRm 0 1 2 3 4
0xx1-414204
1410821264
25454955505
33876269577
4501>501>501>5869
mBd01-@zHG579.1=FR
V2.1-=ggV,mBd7+@zHG8.1=OL
FIehtotevitalercBdniseulavllA
Harmonics of LO
5.114741687
7.183742717
9.143149627
1.213732797
3.292834747
5.223545647
trop
)zHG(ycneuqerFOL
1 2 3 4
V2.1-=ggV,mBd7+=OL
troPFRtarupSOLn
FRehttaderusaemlevelOLtupniwolebcBdniseulaV
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 80
Page 4
MICROWAVE CORPORATION
GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz
HMC216MS8
FEBRUARY 2001
Schematic
RF
(PIN 8)
IF
(PIN 5)
Outline Drawing
0.116/ 0.120
(2.95/ 3.05)
PIN 1
RF IF
HMC
216
LO
Vgg
LO
(PIN 1)
Vgg
(PIN 3)
0.116/ 0.120
(2.95/ 3.05)
0.188/ 0.196
(4.78/ 4.98)
Absolute Maximum Ratings
RF/ IF Input +13 dBm
LO Drive +27 dBm
Storage T emperature -65 to +150 deg C
Operating Temperature -55 to +85 deg C
4
MIXERS
LOT NUMBER
XXXX
YYWW
SMT
DATE CODE
YY= YEAR
WW= WEEK
PIN 1 (REF)
0.032/ 0.036
(0.81/ 0.91)
0.038/ 0.042
(0.96/ 1.07)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
0.0256 TYP
(0.65)
1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED.
B) LEADFRAME MATERIAL: COPPER ALLOY
2 . PLATING: LEAD-TIN SOLDER PLATE
3 . DIMENSIONS ARE IN INCHES (MILLIMETERS),
UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005 (±0.13)
4. ALL UNLABELED LEADS ARE GROUND
0.012 TYP
(0.30)
0 to 5 deg
0.021 MIN TYP
(0.53)
0.005/ 0.007
(0.13/ 0.18)
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