
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1815 is designe d for use in driver stage of AF amplifier a nd
general purpose amplification.
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 150 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA
BVCEO 50 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=60V
IEBO - - 100 nA VEB=5V
*VCE(sat) - - 250 mV IC=100mA, IB=10mA
*VBE(sat) - - 1 V IC=100mA, IB=10mA
*hFE1 120 - 700 VCE=6V, IC=2mA
*hFE2 25 - - VCE=6V, IC=150mA
fT 80 - - MHz VCE=10V, IC=1mA, f=100MH z
Cob - - 3.5 pF VCB=10V, f=1MHz
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE1
Rank C4Y C4G C4B
Range 120-240 200-400 350-700
HMBT1815 HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
10000
Current Gain & Collector Current
1000
hFE
100
hFE @ VCE=6V
10
0.1 1 10 10 0 1000
10000
Sat urati on Voltage & Collector Current
BE(sat)
V
125oC
25oC
Collector Current -IC (mA)
@ IC=10I
75oC
B
1000
CE(sat)
V
100
Satur ation Voltag e ( mV)
10
0.1 1 10 100 1000
B
@ IC=10I
75oC
125oC
25oC
Collector Current-IC (mA)
Capacitan ce & Reverse-Bia s ed Voltage
10
Sat uration Volta ge & C o llector Current
1000
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
1000
(mA)
C
100
Collec tor Current-I
Cutoff Fr equen cy ( M Hz)...
1
0.1
Cutoff Frequency & Collector Current
25oC
125oC
Collector Current-IC (mA)
Safe Operating Area
PT=1s
75oC
PT=100ms
VCE=10V
PT=1ms
Cob
Capacitance (pF)
1
0.1 1 10 100
1
(mA)
C
0.1
Collector Curr ent - I
Reverse- Biased Vol t ag e ( V)
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1s
0.01
10
1 10 100
1 10 100
Collector Current (mA)
Forward Voltage-VCE (V)
0.01
1 10 100
Forwar d Voltage- VCE (V)
HMBT1815 HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
C 4
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT1815 HSMC Product Specification