Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1015 is designe d for use in driver stage of AF amplifier a nd
general purpose amplification.
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -50 - - V IC=-100uA
BVCEO -50 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -100 nA VCB=-50V
IEBO - - -100 nA VEB=-5V
*VCE(sat) - - -300 mV IC=-100mA, IB=-10mA
*VBE(sat) - - -1.1 V IC=-100mA, IB=-10mA
*hFE1 120 - 700 VCE=-6V, IC=-2mA
*hFE2 25 - - VCE=-6V, IC=-150mA
fT 80 - - MHz VCE=-10V, IC=-1mA, f=100MHz
Cob - - 7 pF VCB=-10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE1
Rank A4Y A4G A4B
Range 120-240 200-400 350-700
HMBT1015 HSMC Product Specification
Page 2
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
1000
Current Gain & Collector Current
125oC
25oC
100
hFE
hFE @ VCE=6V
10
0.1 1 10 100 1000
10000
Sat ur at ion Voltage & Collector Current
BE(sat)
V
Collector Current-IC (mA)
@ IC=10I
75oC
B
1000
CE(sat)
V
100
Satur ation Volta g e ( m V)
10
0.1 1 10 100 1000
B
@ IC=10I
125oC
Collec tor Current-IC (mA)
75oC
25oC
Capa citance & Reverse- Biased Vol t age
10.00
Sat urati on Voltage & Col lector Current
1000
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
75oC
25oC
125oC
Collector Current -IC (mA)
Cutoff Frequency & Collector Curren t
1000
CE
100
10
Cutoff Frequency (MHz)...
=10
Cob
Capacitance (p F)
1.00
0.1 1 10 100
Reverse- Biased Voltage ( V)
Safe Operatin g Ar ea
1
PT=1ms
(mA)
C
PT=1s
0.1
Collector Current-I
PT=100ms
1
1 10 100 1000
Collector Current (mA)
0.01
1 10 100
Forwar d- Biase d Vol t age - VCE (V)
HMBT1015 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
A 4
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F., No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT1015 HSMC Product Specification
Loading...