The Hitachi HM62V16256C Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16256C
Series has realized higher density, higher performance and low power consumption by employing CMOS
process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 2 µW (typ) (VCC = 2.5 V)
: 2.4 µW (typ) (VCC = 3.0 V)
• Completely static memory.
No clock or timing strobe required
Write cycle timet
Address valid to end of writet
Chip selection to end of writet
Write pulse widtht
LB, UB valid to end of writet
Address setup timet
Write recovery timet
Data to write time overlapt
Data hold from write timet
Output active from end of writet
Output disable to output in High-Zt
Write to output in high-Zt
Notes: 1. t
CHZ
, t
, t
OHZ
WHZ
and t
are defined as the time at which the outputs achieve the open circuit
BHZ
conditions and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
and from device to device.
4. A write occures during the overlap of a low CS1, a high CS2, a low WE and a low LB or a low UB .
A write begins at the latest transition among CS1 going low, CS2 going high, WE going low and LB
going low or UB going low. A write ends at the earliest transition among CS1 going high, CS2
going low, WE going high and LB going high or UB going high. t
of write to the end of write.
5. t
is measured from the later of CS1 going low or CS2 going high to the end of write.
CW
6. t
is measured from the address valid to the beginning of write.
AS
7. t
is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
Low VCC Data Retention Characteristics (Ta = –20 to +70°C)
HM62V16256C Series
ParameterSymbolMinTyp*4MaxUnitTest conditions*
VCC for data retentionV
DR
2.0—3.6VVin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ V
CS1≥ V
– 0.2 V
CC
– 0.2 V or
CC
(3) LB = UB≥ V
CS2 ≥ V
– 0.2 V,
CC
CS1≤ 0.2 V
Data retention currentI
CCDR
1
*
—0.820µAV
= 3.0 V, Vin ≥ 0V
CC
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ V
CS1≥ V
– 0.2 V,
CC
– 0.2 V or
CC
(3) LB = UB≥ V
CS2 ≥ V
– 0.2 V,
CC
CS1≤ 0.2 V
2
I
Chip deselect to data
t
CCDR
CDR
*
—0.810µA
0——nsSee retention waveform
retention time
Operation recovery timet
R
tRC*
5
——ns
Notes: 1. This characteristic is guaranteed only for L-version, 10 µA max. at Ta = –20 to +40°C.
2. This characteristic is guaranteed only for L-SL version, 5 µA max. at Ta = –20 to +40°C.
3. CS2 controls address buffer, WE buffer, CS1 buffer, OE buffer, LB, UB buffer and Din buffer. If
CS2 controls data retention mode, Vin levels (address, WE, OE, CS1, LB, UB, I/O) can be in the
high impedance state. If CS1 controls data retention mode, CS2 must be CS2 ≥ V
– 0.2 V or 0 V
CC
≤ CS2 ≤ 0.2 V. The other input levels (address, WE, OE, LB, UB, I/O) can be in the high
impedance state.
4. Typical values are at V
5. t
= read cycle time.
RC
= 3.0 V, Ta = +25˚C and not guaranteed.
CC
3
– 0.2 V,
CC
– 0.2 V,
CC
15
Page 16
HM62V16256C Series
Low VCC Data Retention Timing Waveform (1) (CS1 Controlled)
t
CDR
V
CC
Data retention mode
2.2 V
V
DR
2.0 V
CS1
0 V
≥
CS1 V – 0.2 V
CC
Low VCC Data Retention Timing Waveform (2) (CS2 Controlled)
Data retention modet
<<
0 V CS2 0.2 V
V
CC
2.2 V
CS2
V
DR
0.4 V
0 V
CDR
t
R
t
R
Low VCC Data Retention Timing Waveform (3) (LB, UB Controlled)
Data retention mode
LB, UB V – 0.2 V
≥
CC
LB, UB
16
V
CC
2.2 V
V
DR
2.0 V
0 V
t
CDR
t
R
Page 17
Package Dimensions
HM62V16256CLTT Series (TTP-44DB)
18.41
18.81 Max
4423
HM62V16256C Series
Unit: mm
10.16
122
*0.30 ± 0.10
0.25 ± 0.05
1.005 Max
1.20 Max
*Dimension including the plating thickness
Base material dimension
0.80
0.13
0.10
M
*0.17 ± 0.05
0.125 ± 0.04
11.76 ± 0.20
0.13 ± 0.05
Hitachi Code
JEDEC
EIAJ
Mass
0° – 5°
(reference value)
0.80
0.50 ± 0.10
TTP-44DB
—
—
0.43 g
17
Page 18
HM62V16256C Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual
property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage
due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Europe: http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
18
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk