Datasheet HM62G18512BP-4, HM62G18512BP-5 Datasheet (HIT)

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Page 1

HM62G18512 Series

8M Synchronous Fast Static RAM

(512k-word × 18-bit)

ADE-203-1185 (Z)

Preliminary

Rev. 0.0

Jun. 12, 2000

Description

The HM62G18512 is a synchronous fast static RAM organized as 512-kword × 18-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119bump BGA.

Note: All power supply and ground pins must be connected for proper operation of the device.

Features

• Power supply: 3.3 V +10%, –5%

• Clock frequency: 200 MHz to 250 MHz

• Internal self-timed late write

• Byte write control (2 byte write selects, one for each 9-bit)

• Optional ×36 configuration

• HSTL compatible I/O

• Programmable impedance output drivers

• User selective input trip-point

• Differential, HSTL clock inputs

• Asynchronous G output control

• Asynchronous sleep mode

• Limited set of boundary scan JTAG IEEE 1149.1 compatible

• Protocol: Single clock register-register mode

Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specifications.

Page 2

HM62G18512 Series

Ordering Information

Type No. Access time Cycle time Package

HM62G18512BP-4 HM62G18512BP-5

Pin Arrangement

2.1 ns

2.5 ns

4.0 ns

5.0 ns

119-bumps BGA

1234567

VDDQ SA0 SA6 NC SA4 SA2 VDDQ

NC NC SA7 NC SA8 SA18 NC

NC SA13 SA3 VDD SA5 SA1 NC

DQb0 NC VSS ZQ VSS DQa4 NC

NC DQb1 VSS SS VSS NC DQa5

VDDQ NC VSS G VSS DQa6 VDDQ

NC DQb2 SWEb NC NC DQa7

DQb3 NC VSS NC VSS DQa8 NC

VDDQ VDD VREF VDD VREF VDD VDDQ

NC DQb8 VSS K VSS NC DQa3

DQb7 NC K SWEa DQa2 NC

VDDQ DQb6 VSS SWE VSS NC VDDQ

DQb5 NC VSS SA16 VSS DQa1 NC

NC DQb4 VSS SA14 VSS NC DQa0

NC SA9 M1 VDD M2 SA10 NC

NC SA17 SA11 NC SA12 SA15 ZZ

VDDQ TMS TDI TCK TDO NC VDDQ

VSS

119-bump 1. 27 mm 14 mm × 22 mm BGA (BP-119A)

(Top view)

Page 3

HM62G18512 Series

Pin Description

Name I/O type Descriptions Notes

DDQ

REF

K Input Clock input. Active high.

K Input Clock input. Active low. SS Input Synchronous chip select SWE Input Synchronous write enable

SAn Input Synchronous address input n = 0, 1, 2...18

SWEx Input Synchronous byte write enables x = a, b G Input Asynchronous output enable

ZZ Input Power down mode select ZQ Input Output impedance control 1 DQxn I/O Synchronous data input/output x = a, b

M1, M2 Input Output protocol mode select TMS Input Boundary scan test mode select TCK Input Boundary scan test clock TDI Input Boundary scan test data input TDO Output Boundary scan test data output NC — No connection

Supply Core power supply Supply Ground Supply Output power supply Supply Input reference: provides input reference voltage

n = 0, 1, 2...8

M1 M2 Protocol Notes

Synchronous register to register operation 2

Notes: 1. ZQ is to be connected to VSS via a resistance RQ where 150 Ω ≤ RQ ≤ 300 Ω, if ZQ = V

open, output buffer impedance will be maximum. A case of minimum impedance, it needs to connect over 120 Ω between ZQ and V

2. There is 1 protocol with mode pin. Mode control pins (M1, M2) are to be tied either V

respectively. The state of the Mode control inputs must be set before power-up and must not change during device operation. Mode control inputs are not standard inputs and may not meet V

or VIL specification. This SRAM is tested only in the synchronous register to register

operation.

DDQ

or V

Page 4

HM62G18512 Series

Block Diagram

A0 to A18

SWE

SWEx

REF

JTAG register

R-Add register

SS register

SWE register

SWEx register

CLK

control

W-Add register

Impedance contorol logic

MUX

WRC

Match

DOC

D-in register

Memory

cell array

(512k × 18)

Row decoder

Column decoder

Multiplex

D-out register

DQa0-8 DQb0-8

TDI

TCK

TMS

JTAG tap controller

TDO

Page 5

HM62G18512 Series

Operation Table

ZZ SS G SWE SWEa SWEb K K Operation DQ (n) DQ (n + 1)

H ЧЧЧЧЧЧЧsleep mode High-Z High-Z LH××××L-H H-L Dead

(not selected)

L × H ЧЧЧЧЧDead

(Dummy read)

LLLH××L-H H-L Read × Dout

LL× L L L L-H H-L Write a, b byte High-Z Din (a,b)0-8 LL× L L H L-H H-L Write a byte High-Z Din (a)0-8 LL× L H L L-H H-L Write b byte High-Z Din (b)0-8

Notes: 1. × means don’t care for synchronous inputs, and H or L for asynchronous inputs.

2. SWE, SS, SWEa to SWEb , SA are sampled at the rising edge of K clock.

3. Although differential clock operation is implied, this SRAM will operate properly with one clock phase (either K or K) tied to V specified within this document will be met.

. Under such single-ended clock operation, all parameters

REF

× High-Z

High-Z High-Z

(a,b)0-8

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HM62G18512 Series

Absolute Maximum Ratings

Parameter Symbol Value Unit Notes

Input voltage on any pin V Core supply voltage V Output supply voltage V Operating temperature T Storage temperature T

DDQ

OPR

STG

–0.5 to V –0.5 to 3.9 V 1 –0.5 to 2.2 V 1, 4 0 to 70 °C

–55 to 125 °C Junction temperature Tj 110 °C Output short–circuit current I Latch up current I

OUT

25 mA

200 mA Package junction to case thermal resistance θJC 2 °C/W 5, 7 Package junction to ball thermal resistance θJB 5 °C/W 6, 7

Notes: 1. All voltage is referred to VSS.

2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted the Operation Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown in the tables after thermal equilibrium has been established.

4. The supply voltage application sequence need to be powered up in the following manner: V V

, V

DDQ

then VIN. Remember, according to the Absolute Maximum Ratings table, V

REF

not to exceed 3.9 V, whatever the instantaneous value of V

5. θJC is measured at the center of mold surface in fluorocarbon (See Figure “Definition of Measurement”).

6. θJB is measured on the center ball pad after removing the ball in fluorocarbon (See Figure “Definition of Measurement”).

7. These thermal resistance values have error of ± 5°C/W.

+ 0.5 V 1, 4

DDQ

θJC

θJB

T.C.

Fluorocarbon

T.C.

Fluorocarbon

Definition of Measurement

Page 7

HM62G18512 Series

Note: The following the DC and AC specifications shown in the Tables, this device is tested under the

minimum transverse air flow exceeding 500 linear feet per minute.

DC Operating Conditions (Ta = 0 to 70°C [Tj max = 110°C])

Parameter Symbol Min Typ Max Unit Notes

Supply voltage (Core) V Supply voltage (I/O) V Supply voltage V Input reference voltage (I/O) V Input high voltage V Input low voltage V Clock differential voltage V Clock common mode voltage V

DDQ

REF

DIF

Notes: 1. Peak to peak AC component superimposed on V

2. Minimum differential input voltage required for differential input clock operation.

3. See following figure.

4. V

= 0.75 V (typ).

REF

3.135 3.30 3.63 V

1.4 1.5 1.6 V 000 V

0.65 0.75 0.90 V 1 V

+ 0.1 — V

REF

–0.5 — V

0.1 — V

+ 0.3 V 4

DDQ

– 0.1 V 4

REF

+ 0.3 V 2, 3

DDQ

0.55 — 0.90 V 3 may not exceed 5% of V

REF

DDQ

DIF

Differential Voltage/Common Mode Voltage

Page 8

HM62G18512 Series

DC Characteristics (Ta = 0 to 70°C, [Tj max = 110°C], VDD = 3.3 V +10%, –5%)

Parameter Symbol Min Typ Max Unit Notes

Input leakage current I Output leakage current I Standby current I VDD operating current,

excluding output drivers 4 ns cycle

VDD operating current, excluding output drivers 5 ns cycle

Quiescent active power supply current

Output low voltage V Output high voltage V ZQ pin connect

resistance Output low current I Output high current I

Notes: 1. 0 ≤ Vin ≤ V

2. 0 ≤ Vout ≤ V

DDQ

3. All inputs (except clock) are held at either V guaranteed at 75°C junction temperature.

4. Iout = 0 mA, read 50%/write 50%, V

. Iout = 0 mA, read 50%/write 50%, V

6. Minimum impedance push pull output buffer mode, I

7. Measured at V

8. Measured at V

9. Output buffer impedance can be programmed by terminating the ZQ pin to V precision resister (RQ). The value of RQ is five times the output impedance desired. The allowable range of RQ to guarantee impedance matching with a tolerance of 15% is between 150 Ω and 300 Ω. If the status of ZQ pin is open, output impedance is maximum. Maximum impedance occurs with ZQ connected to V occurs when the SRAM is in High-Z. Write and Deselect operations will synchronously switch the SRAM into and out of High-Z, therefore triggering an update. The user may choose to invoke asynchronous G updates by providing a G setup and hold about the K clock to guarantee the proper update. At power-up, the output impedance defaults to minimum impedance. It will take 2048 cycles for the impedance to be completely updated if the programmed impedance is much higher than minimum impedance.

SBZZ

DD4

DD5

DD2

RQ 150 250 300 Ω

for all input pins (except V

, DQ in High-Z.

——2 µA1 ——5 µA2 — — 100 mA 3 — — 700 mA 4

— — 600 mA 4

— — 200 mA 5

= 1/2 V

– 0.4 — V

DDQ

/2)/[(RQ/5)–15%] — (V

DDQ

/2)/[(RQ/5–4)+15%] — (V

DDQ

REF

= VDD max, VIN = VIH or VIL, Frequency = minimum cycle.

= VDD max, VIN = VIH or VIL, Frequency = 3 MHz.

DDQ

—VSS + 0.4 V 6

DDQ

/2)/[(RQ/5)+15%] mA 7, 9

DDQ

/2)/[(RQ/5–4)–15%] mA 8, 9

DDQ

, ZQ, M1, M2 pin).

or VIL, ZZ is held at VIH, Iout = 0 mA, Spec is

= –6 mA, IOL = 6 mA.

. The impedance update of the output driver

DDQ

through a

Page 9

HM62G18512 Series

Capacitance (Ta = 25°C, f = 1 MHz)

Parameter Symbol Min Max Unit Note

Input capacitance (SAn, SS, SWE, SWEx)C Input capacitance (K, K, G)C Input/Output capacitance (DQxn) C

Note: 1. This parameter is sampled and not 100% tested.

CLK

AC Characteristics (Ta = 0 to 70°C, [Tj max = 110°C], VDD = 3.3 V +10%, –5%)

Test Conditions

— 4 pF 1 — 7 pF 1 — 5 pF 1

• Input pulse levels (K, K): V

= 0.75 V, VCM = 0.75 V

DIF

• Input timing reference level (K, K): Differential cross point

• Input pulse levels (except K, K): VIL = 0.25 V, VIH = 1.25 V

• Input and output timing reference levels (except K, K): V

= 0.75 V

REF

• Input rise and fall time: 0.5 ns (10% to 90%)

• Measurement condition: the minimum impedance push pull output buffer mode, IOH = –6 mA, IOL = 6

• Output driver supply voltage: V

DDQ

= 1.5 V

• Output load: See figure

50 Ω

0.75 V

50 Ω

0.75 V

16.7 Ω

16.7 Ω 50 Ω

50 Ω

5 pF

0.75 V

Page 10

HM62G18512 Series

Single Differential Clock Register-Register Mode (M1 = VSS, M2 = VDD)

HM62G18512

-4 -5

Parameter Symbol Min Max Min Max Unit Notes

CK clock cycle time t CK clock high width t CK clock low width t Address setup time t Data setup time t Address hold time t Data hold time t Clock high to output valid t Clock high to output hold t Clock high to output valid

(SS control) Clock high to output High-Z t Output enable low to output Low-Z t Output enable low to output valid t Output enable low to output High-Z t Sleep mode recovery time t Sleep mode enable time t

Notes: 1. Guaranteed by design.

2. Refer to the Test Conditions.

3. Transitions are measured at start point of output high impedance from output low impedance.

4. Output driver impedance updates during High-Z.

5. Transitions are measured ±50 mV from steady state voltage.

6. When ZZ is switching, clock input K must be at same logic levels for reliable operation.

KHKH

KHKL

KLKH

AVKH

DVKH

KHAX

KHDX

KHQV

KHQX

KHQX2

KHQZ

GLQX

GLQV

GHQZ

ZZR

ZZE

4.0 — 5.0 — ns

1.5 — 1.5 — ns

0.5 — 0.5 — ns

0.75 — 1.0 — ns 1

0.75 — 1.0 — ns 1 — 2.1 — 2.5 ns 2

0.5 — 0.5 — ns 2 — 2.1 — 2.5 ns 2, 5

— 2.5 — 3.0 ns 2, 3

0.5 — 0.5 — ns 2, 5 — 2.5 — 2.5 ns 2, 3 — 2.5 — 2.5 ns 2, 3

10.0 — 10.0 — ns 6 — 10.0 — 10.0 ns 2, 3, 6

Page 11

Timing Waveforms

Read Cycle-1

HM62G18512 Series

A1 A2 A3 A4

SWE

SWEx

Note: G, ZZ = V

KHKH

AVKH

KHKLtKLKH

KHAX

KHQX

Do 1Do 0 Do 2

KHQV

Page 12

HM62G18512 Series

Read Cycle-2 (SS Controlled)

A1 A3 A4

SWE

SWEx

Note: G, ZZ = V

AVKH

KHAX

AVKH

KLKH

KHQZ

KHAX

KHKH

AVKH

KHKL

Do 0 Do 1 Do 3

KHQX2

Page 13

Read Cycle-3 (G Controlled)

HM62G18512 Series

KHKH

KHKL

KLKH

AVKH

A1 A2 A3 A4

AVKH

KHAX

AVKH

KHAX

SWE

SWEx

GHQZ t

GLQV

DQ Do 1Do 0 Do 3

Note: ZZ = V

GLQX

Page 14

HM62G18512 Series

Write Cycle

SWE

SWEx

Note: ZZ = V

KHAX

KLKH

KHKH

AVKH

KHKL

A1 A2 A3 A4

AVKH

DVKH

KHAX

KHDX

Di 0 Di 1 Di 2 Di 3

Page 15

Read-Write Cycle

HM62G18512 Series

SWE

SWEx

Note: ZZ = V

ZZ Control

READ WRITEREAD

(G control)

KHKH

KHKL

KLKH

READ DEAD

(SS control)

WRITE

AVKH

KHAX

A7A6A4A3A1

AVKH

KHAX

AVKH

GHQZ

KHAX

DVKHtKHDX

GLQV

Do 0 Do 1 Do 4Di 3 Di 6

KHQX

KHQV

GLQX

KHQZ

SWE

SWEx

Sleep active

Note: G = V

KHKH

AVKH

ZZR

KHKL

KHAX

KLKH

Sleep off

Do 1

Sleep active

ZZE

Page 16

HM62G18512 Series

Boundary Scan Test Access Port Operations

In order to perform the interconnect testing of the modules that include this SRAM, the serial boundary scan test access port (TAP) is designed to operate in a manner consistent with IEEE Standard 1149.1 -

1990. But does not implement all of the functions required for 1149.1 compliance The HM62Gxx series contains a TAP controller. Instruction register, Boundary scans register, Bypass register and ID register.

Test Access Port Pins

Symbol I/O Name

TCK Test clock TMS Test mode select TDI Test data in TDO Test data out

Note: This Device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1.

To disable the TAP, TCK must be connected to V To test Boundary scan, ZZ pin need to be kept below V

TAP DC Operating Conditions (Ta = 0 to 70°C, [Tj max = 110°C])

. TDO should be left unconnected.

– 0.4 V.

REF

Parameter Symbol Min Max Unit Notes

Boundary scan input high voltage V Boundary scan input low voltage V Boundary scan input leakage current I Boundary scan output low voltage V Boundary scan output high voltage V

2.0 VDD + 0.3 V –0.5 0.8 V –2 2 µA1 — 0.4 V 2

2.4 — V 3

Notes: 1. 0 ≤ Vin ≤ VDD for all logic input pin.

2. I

= 8 mA.

3. I

= –8 mA.

Page 17

HM62G18512 Series

TAP AC Characteristics (Ta = 0 to 70°C, [Tj max = 110°C])

Parameter Symbol Min Max Unit Note

Test clock cycle time t Test clock high pulse width t Test clock low pulse width t Test mode select setup t Test mode select hold t Capture setup t Capture hold t TDI valid to TCK high t TCK high to TDI don’t care t TCK low to TDO unknown t TCK low to TDO valid t

THTH

THTL

TLTH

MVTH

THMX

DVTH

THDX

TLQX

TLQV

Note: 1. tCS + tCH defines the minimum pause in RAM I/O pad transitions to assure pad data capture.

TAP Test Conditions

67 — ns 30 — ns 30 — ns 10 — ns 10 — ns 10 — ns 1 10 — ns 1 10 — ns 10 — ns 0—ns —20ns

• Input pulse levels: 0 to 3.0 V

• Input and output timing reference levels: 1.5 V

• Input rise and fall time: 2 ns (10% to 90%) (typ)

• Output Load: See figure

DUT

TDO

VT = 1.5 V

50 Ω

= 50 Ω

Page 18

HM62G18512 Series

TAP Controller Timing Diagram

THTHtTHTLtTLTH

TCK

MVTH

THMX

TMS

DVTH

THDX

TDI

TLQV

TLQX

TDO

RAM

Address

Test Access Port Registers

Instruction register 3 bits IR [0;2] Bypass register 1 bit BP ID register 32 bits ID [0;31] Boundary scan register 51 bits BS [1;51]

Page 19

HM62G18512 Series

TAP Controller Instruction Set

IR2 IR1 IR0 Instruction Operation

0 0 0 SAMPLE-Z Tristate all data drivers and capture the pad value 0 0 1 IDCODE 0 1 0 SAMPLE-Z Tristate all data drivers and capture the pad value 0 1 1 BYPASS 1 0 0 SAMPLE 1 0 1 BYPASS 1 1 0 BYPASS 1 1 1 BYPASS

Note: This Device does not perform EXTEST, INTEST or the preload portion of the PRELOAD command

in IEEE 1149.1.

Page 20

HM62G18512 Series

Boundary Scan Order

Bit No. Bump ID Signal name Bit No. Bump ID Signal name

15RM2272BNC 2 6T SA15 28 3A SA6 3 4P SA14 29 3C SA3 4 6R SA10 30 2C SA13 5 5T SA12 31 2A SA0 6 7T ZZ 32 1D DQb0 7 7P DQa0 33 2E DQb1 8 6N DQa1 34 2G DQb2 9 6L DQa2 35 1H DQb3 10 7K DQa3 36 3G SWEb 11 5L SWEa 37 4D ZQ 12 4L K 38 4E SS 13 4K K 39 4G NC 14 4F G 40 4H NC 15 6H DQa8 41 4M SWE 16 7G DQa7 42 2K DQb8 17 6F DQa6 43 1L DQb7 18 7E DQa5 44 2M DQb6 19 6D DQa4 45 1N DQb5 20 6A SA2 46 2P DQb4 21 6C SA1 47 3T SA11 22 5C SA5 48 2R SA9 23 5A SA4 49 4N SA16 24 6B SA18 50 2T SA17 25 5B SA8 51 3R M1 26 3B SA7

Notes: 1. Bit number1 is the first scan bit to exit the chip.

2. The NC pads listed in this table are indeed no connects, but are represented in the boundary scan register by a “Place Holder”. Placeholder registers are internally connected to V

3. In Boundary scan mode, differential input K and K are referred to each other and must be at opposite logic levels for reliable operation.

4. ZZ must remain at V

5. In boundary scan mode, ZQ must be driven to V

6. M1 and M2 must be driven to V

during boundary scan.

or VSS supply rail to ensure consistent results.

DDQ

Page 21

ID register

Bit No.

31×30×29×28×2702602512412312202102001911811701601501401301201101009080706050403121110

Value

HM62G18512 Series

Vendor Revision No.

Depth Width Use in the future Vendor ID No. Fix

TAP Controller State Diagram

Test-Logic-

Reset

Run-Test/

Idle

Select-

DR-Scan

Capture-DR

Shift-DR

Exit1-DR

Pause-DR

Exit2-DR

IR-Scan

Capture-IR

Shift-IR

Exit1-IR

Pause-IR

Exit2-IR

Select-

Update-DR

Note: The value adjacent to each state transition in this figure represents the signal present

at TMS at the time of a rising edge at TCK. No matter what the original state of the controller, it will enter Test-Logic-Reset when TMS is held high for at least five rising edges of TCK.

Update-IR

Page 22

HM62G18512 Series

Package Dimensions

HM62G18512BP Series (BP-119A)

Unit: mm

0.204 ×

4 × C1.2

Pin 1 Index

22.00

0.60 ± 0.10

119 × 0.75 ± 0.15

0.30

0.15 C

CAB

14.00

13.0 ± 0.10

2.10 ± 0.25

0.35 C

0.15 C

21.0 ± 0.10

1.27

1234567

A B C D E F G H J K L M N P R T U

Details of the part Y

Hitachi Code JEDEC EIAJ

(reference value)

Mass

BP-119A Conforms —

1.2 g

Page 23

HM62G18512 Series

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http://semiconductor.hitachi.com/

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For further information write to:

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