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HI-SINCERITY
MICROELECTRONICS CORP.
HLB125E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125E is designed for lighting applications and low switch-mode
power supplies. And it is high voltage capability and high switching speeds.
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
Absolute Maximum Ratings
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 40 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... 600 V
VCEO Collector to Emitter Voltage ................................................................................................ 400 V
VEBO Emitter to Base Voltage.......................................................................................................... 9 V
IC Collector Current (DC)................................................................................................................... 5 A
IC Collector Current (Pulse)............................................................................................................... 8 A
IB Base Current (DC)......................................................................................................................... 2 A
IB Base Current (Pulse)..................................................................................................................... 4 A
TO-220
C
B
E
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 9 - - V IE=10mA, IC=0
ICES - - 100 UA VCE=700V
ICEO - - 100 uA VCE=400V
*VCE(sat)1 - - 0.5 V IC=1A, IB=0.2A
*VCE(sat)2 - - 0.7 V IC=2A, IB=0.4A
*VCE(sat)3 - - 1.1 V IC=3A, IB=0.75A
*VBE(sat)1 - - 1.1 V IC=1A, IB=0.2A
*VBE(sat)2 - - 1.2 V IC=2A, IB=0.4A
*hFE1 8 - 35 IC=2A, VCE=5V
*hFE2 10 - - IC=10mA, VCE=5V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B1 B2 B3 B4 B5
hFE1 8-17 15-21 19-25 23-31 29-35
HLB125E HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 2/4
100
Current Gai n & Collector Current
125oC
25oC
10
hFE
hFE @ VCE=5V
1
0.1 1 10 100 1000 10000
100000
10000
Collector Current-IC (mA)
Saturation Voltage & Coll cet or Cur rent
CE(sat)
V
@ IC=5I
B
75oC
125oC
10000
CE(sat)
V
1000
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
B
@ IC=4I
125oC
Collector Current- IC (mA)
75oC
Sat ura tion Voltage & C olltct or Cur rent
10000
Sat urati on Voltage & Collector Cu rren t
@ IC=5I
B
BE(sat)
V
25oC
1000
Saturat ion Volta ge ( m V)
100
10
1 10 100 1000 10000
10000
1000
On Voltage ( m V)
ON Voltage & Collector Current
25oC
Collector Current-IC (mA)
BE(ON)
V
@ VCE=5V
75oC
1000
Saturation Voltage (mV)
100
1 10 100 1000 10000
1000
100
Capacitance (Pf )
25oC
125oC
Collector Current-IC (mA)
Ca pacitance & Reverse-Biased Voltage
75oC
Cob
100
1 10 100 1000 10000
Collector Current (mA)
10
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
HLB125E HSMC Product Specification
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HI-SINCERITY
)
MICROELECTRONICS CORP.
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 3/4
100000
10000
1000
100
Collect or Cur rent (mA
10
1
1 10 100 1000 10000
Sa fe Op erating Area
PT=1 ms
PT=100 ms
PT=1 s
Forwar d Voltage (V)
HLB125E HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
B
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 4/4
Marking:
E
C
H
1
LB
25E
Date Code
Control Code
H
Style: Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB125E HSMC Product Specification
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