
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 1/3
HLB123T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123T is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
•
(Ta=25°C)
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -50 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C) ............................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C)................................................................................................. 30 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage ................................................................................................ 600 V
BVCEO Collector to Emitter Voltage ............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC).................................................................................................................. 1 A
IC Collector Current (Pulse).............................................................................................................. 2 A
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 8 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=600V, IE=0
IEBO - - 10 uA VBE=9V, IC=0
*VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA
*VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA
*VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA
*VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA
*hFE1 10 - 50 IC=0.3A, VCE=5V
*hFE2 10 - - IC=0.5A, VCE=5V
*hFE3 6 - - IC=1A, VCE=5V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B1 B2 B3 B4 B5 B6 B7 B8
Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50
HLB123T HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 2/3
100
Current Gain & Collector Current
hFE
10
1 10 100 1000
1000
Collector Curren t ( mA)
On Vol t age & Coll ect or Cur ren t
hFE @ VCE=5V
BE(on)
V
@ VCE=5V
1000
100
10
Satu r ation Voltage ( m V)
1
Saturation Voltage & C ollect or Current
BE(sat)
V
CE(sat)
V
1 10 100 1000
Collector Curren t ( mA)
@ IC=10I
@ IC=10I
B
B
Capa citan ce & Rev er se- Biased Vol t age
100
On Voltage (mV)
100
1 10 100 1000
Collector Curren t ( mA)
Switching Time & Collector Current
10.0
VCC=100V, IC=5IB1=-5I
1.0
Switching Time ( us)
B2
Tstg
Tf
Ton
10
Capac itance (pF)
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Cob
Safe Operating Area
10000
1000
PT=1ms
100
Collector Curren t ( mA)
PT=100ms
PT=1s
0.1
0.1 1.0
Collector Curren t ( A)
10
1 10 100 1000
Forwar d Vol tage (V)
HLB123T HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
TO-126 Dimension
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 3/3
I
KJ
M
α
3
α
4
L
3-Lead TO-126 Plastic Package
HSMC Packa
°
°
°
°
-
-
-
-
e Code : T
*3
°
*3
°
*3
°
*3
°
Marking :
DIM
HSMC Logo
Part Number
Date Code
Style : Pin 1.Emitter 2.Collector 3.Base
Min. Max. Min. Max.
Product Series
Rank
Ink Marking
F 0.0280 0.0319 0.71 0.81
G 0.0480 0.0520 1.22 1.32
H 0.1709 0.1890 4.34 4.80
I 0.0950 0.1050 2.41 2.66
DIM
1
α
2
α
3
α
4
α
D
E
A
B
2
1
3
G
C
F
H
α
1
α
2
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
-
-
-
-
*3
*3
*3
*3
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
HLB123T HSMC Product Specification
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C