HI-SINCERITY
MICROELECTRONICS CORP.
HLB123D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123D is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 1/4
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 8 V
IC Collector Current (DC) .................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 8 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=600V, IE=0
IEBO - - 10 uA VBE=9V, IC=0
*VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA
*VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA
*VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA
*VBE(sat)2 - - 1.8 V IC=0.3A, IB=30Ma
*hFE1 10 - 50 IC=0.3A, VCE=5V
*hFE2 10 - - IC=0.5A, VCE=5V
*hFE3 6 - - IC=1A, VCE=5V
Ton - 0.4 1.1 uS VCC=100V, IC=1A, IB1=IB2=0.2A
Tstg - 2.4 4 uS VCC=100V, IC=1A, IB1=IB2=0.2A
Toff - 0.3 0.7 uS VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B1 B2 B3 B4 B5 B6 B7 B8
Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50
HLB123D HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 2/4
100
125oC
25oC
75oC
10
hFE
hFE @ VCE=5V
1
1 10 100 1000 10000
Collector Current IC (mA)
Sat urati on Voltage & Collector Curren t
10000
Current Gain & Collector Current
10000
1000
100
Satur ation Voltage ( m V)
25oC
10
1 10 100 1000 10000
125oC
V
Collect o r Current IC (mA)
CE(sat)
On Voltage & Collector C urrent
1000
BE(on)
V
@ VCE=5V
Sat urati on Voltage & Collector Curren t
75oC
@ IC=10I
B
75oC
1000
Saturat ion Voltag e ( m V)
100
1 10 100 1000 10000
25oC
125oC
Collect o r Current IC (mA)
BE(sat)
V
Capacitance & Rev erse-Biased Volatge
100
10
Capacitance (pF)
Cob
@ IC=10I
On Voltage ( m V)
B
100
1 10 100 1000
10.0
1.0
Switc hin g Time (us
Swi tching Time & Collect or Current
VCC=100V, IC=5IB1=-5I
Collector Current (mA)
B2
Tstg
Tf
Ton
1
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
0.1
0.1 1.0
Collector Current (A)
HLB123D HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 3/4
10000
1000
100
Collector Current (m A
10
1 10 100 1000
Safe Operating Area
Forwar d Voltage (V)
PT=1ms
PT=100ms
PT=1s
HLB123D HSMC Product Specification
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
D
C
N
M L K
E
F
3
2
1
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 4/4
Marking:
HB
L
B
O
H
I
G
J
Date Code
Rank would show on label
Style: Pin 1.Emitter 2.Collector 3.Base
213
D
B
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB123D HSMC Product Specification
Loading...