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HI-SINCERITY
MICROELECTRONICS CORP.
HLB122I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122I is a medium power transistor designed for use in switching
applications.
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/4
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
TO-251
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse) ...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse).............................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - - V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=600V
ICEO - - 10 uA VCE=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=100mA, IB=20mA
*VCE(sat)2 - - 800 mV IC=300mA, IB=60mA
*VBE(sat) - - 1 V IC=100mA, IB=20mA
*hFE1 10 - 40 VCE=10V, IC=0.1A
*hFE2 10 - - VCE=10V, IC=0.5A
tf - - 0.6 uS VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank B1 B2 B3 B4 B5 B6
Range 10-17 13-22 18-27 23-32 28-37 33-40
HLB122I HSMC Product Specification
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HI-SINCERITY
V
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 2/4
100
Cur rent Ga in & C o llector Current
75oC125oC
25oC
10
hFE
hFE @ VCE=10
1
1 10 100 1000
10000
1000
Sat urati on Voltage & Collector Current
25oC
Collector Current-IC (mA)
BE(sat)
V
@ IC=5I
B
75oC
10000
1000
100
Saturation Voltage (mV)
10
1
1 10 100 1000
125oC
V
Collector Current-IC (mA)
CE(sat)
ON Vol tage & Collector Current
1000
BE(on)
V
@ VCE=10V
(mV)
BE(on)
Sat urati on Voltage & Collector Current
75oC
@ IC=5I
25oC
B
Saturation Voltage (mV)
100
1 10 100 1000
100
10
Capacitance-Cob ( pF)
1
Capacitan ce & Reverse- B iased Voltage
0.1 1 10 100
125oC
Collector Current-IC (mA)
Reverse- Biased Vol tage (V)
ON Voltage-V
100
1 10 100 1000
10000
1000
100
Collector Cu rren t (mA
10
1
1 10 100 1000
Collector Curren t (mA)
Safe Operati ng Area
PT=1ms
PT=100ms
PT=1s
Forwar d- Biased Vol tage (V)
HLB122I HSMC Product Specification
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HI-SINCERITY
f
MICROELECTRONICS CORP.
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 3/4
10
1
Switching Time (us)...
0.1
100 1000
Switch ing Time & Collector Current
VCC=45V, IC=5IB1=-5I
Tstg
Ton
B2
T
Collector Current (mA)
HLB122I HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-251 Dimension
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 4/4
A
C
B
L
HB
I
D
Date Code
212
Control Code
F G
Marking:
Style: Pin 1.Base 2.Collector 3.Emitter
3
I
E
K
2
H
1
J
3-Lead TO-251 Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code: I
DIM
*: Typical
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20
Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB122I HSMC Product Specification
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