Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121J is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
•
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - 650 V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=550V
ICEO - - 10 uA VCB=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=50mA, IB=10mA
*VCE(sat)2 - - 750 mV IC=100mA, IB=20mA
*VBE(sat) - - 1 V IC=50mA, IB=10mA
*hFE1 8 - - VCE=10V, IC=10mA
*hFE2 10 - 36 VCE=10V, IC=50mA
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HLB121J HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 2/3
100
hFE @ VCE=10V
10
hFE
1
1 10 100 1000
Collector Curren t (m A )
On Vol t age & Collector Cur r ent
10000
Dc Current Gai n & Collector Current
100000
Saturation Volt age & Coll ector Cu rrent
10000
1000
BE(sat)
V
Satu r ation Voltage (mV)
100
CE(sat)
V
10
1 10 100 1000
1000
100
Capa cita n ce Reverse-Bi ased Volta ge
Collector Curren t (m A )
@ IC=5I
@ IC=5I
B
B
Cib
1000
Bton @ VCE=10V
On Voltage-Bton
100
0 100 200 300 400 500 600
Collector Curren t (m A )
Switching Time & Collector Current
10
VCC=100V, IC=5IB1=-5I
1
Switch ing Time (us )
B2
Tstg
Tf
Ton
10
Collector Curren t (m A )
Cob
1
0.1 1 10 100
Reverse Biased Volt age ( V)
Safe Operating Area
10000
1000
100
Collector Curren t (m A )
PT=1ms
PT=100ms
PT=1s
0.1
0 100 200 300 400 500 600
Collector Curren t (m A )
10
0 50 100 150 200 250
Forwar d Biased Vol tage (V)
HLB121J HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 3/3
A
B
L
F
G
C
D
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Mark
Style : Pin 1.Base 2.Collector 3.Emitter
3
H
E
K
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code : J
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.0866 0.1102 2.20 2.80
B 0.0650 0.0768 1.65 1.95 H - *0.0906 - *2.30
C 0.0354 0.0591 0.90 1.50 I - 0.0354 - 0.90
D 0.0177 0.0236 0.45 0.60 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2125 0.2283 5.40 5.80 L 0.0551 0.0630 1.40 1.60
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sales office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HLB121J HSMC Product Specification
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Loading...