Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121I is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
•
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - - V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=550V
ICEO - - 10 uA VCB=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=50mA, IB=10mA
*VCE(sat)2 - - 750 mV IC=100mA, IB=20mA
*VBE(sat) - - 1 V IC=50mA, IB=10mA
*hFE1 8 - - VCE=10V, IC=10mA
*hFE2 10 - 36 VCE=10V, IC=50mA
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 2/3
100
Dc Current Gai n & Collector Current
hFE @ VCE=10V
10
hFE
1
1 10 100 1000
10000
Collector Curren t ( mA)
On Vol t age & Coll ect or Cur ren t
100000
10000
1000
BE(sat)
V
Satu r ation Voltage ( m V)
100
10
1 10 100 1000
CE(sat)
V
Collector Curren t ( mA)
@ IC=5I
@ IC=5I
B
B
Capacit ance Reverse Biased Voltage
1000
Saturation Voltage & C ollector Current
100
Cib
1000
Bton @ VCE=10V
On Voltage-Bton
100
0 100 200 300 400 500 600
Collector Curren t ( mA)
Switching Time & Collector Current
10
VCC=100V, IC=5IB1=-5I
Ton Tstg
1
Switching Time ( us)
Tf
B2
10
Collector Curren t ( mA)
Cob
1
0.1 1 10 100
10000
1000
100
Collector Curren t ( mA)
Reverse Biased Vol tage (V)
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
0.1
0 100 200 300 400 500 600
Collector Curren t ( mA)
10
0 50 100 150 200 250
Forwar d Biased Vol tage (V)
HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-251 Dimension
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 3/3
A
C
B
HSMC Logo
D
Part Number
Date Code
Product Series
Rank
Ink Mark
F G
Style : Pin 1.Base 2.Collector 3.Emitter
3
I
Marking :
E
K
2
H
1
J
3-Lead TO-251 Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code : I
DIM
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
Loading...