Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121A
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121A is a medium power transistor designed for use in switching
applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings
Spec. No. : HA200112
Issued Date : 2001.04.01
Revised Date : 2005.02.05
Page No. : 1/4
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction T e mperature.................................................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (T
Total Power Dissipation (T
=25°C)...................................................................................................................... 1 W
A
=25°C).................................................................................................................... 10 W
C
• Maximum Voltages and Currents
BV
Collector to Base Voltage....................................................................................................................... 600 V
CBO
BV
Collector to Emitter Voltage.................................................................................................................... 400 V
CEO
Emitter to Base Voltage.............................................................................................................................. 6 V
BV
EBO
I
Collector Current (DC) ............................................................................................................................... 300 mA
C
I
Collector Current (Pulse)............................................................................................................................ 600 mA
C
I
Base Current (DC)........................................................................................................................................ 40 mA
B
I
Base Current (Pulse).................................................................................................................................. 100 mA
B
Electrical Characteristics (T
=25°C)
A
Symbol Min. Typ. Max. Unit Test Conditions
BV
BV
BV
*V
*V
*V
CBO
CEO
EBO
I
CBO
I
CEO
I
EBO
CE(sat)1
CE(sat)2
BE(sat)
*h
FE1
*h
FE2
600 - - V IC=100uA
400 - - V IC=10mA
6--VI
=10uA
E
- - 10 uA VCB=550V
- - 10 uA VCB=400V
- - 10 uA VEB=6V
- - 400 mV IC=50mA, IB=10mA
- - 750 mV IC=100mA, IB=20mA
--1VI
8-- V
=50mA, IB=10mA
C
=10V, IC=10mA
CE
10 - 36 VCE=10V, IC=50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB121A HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200112
Issued Date : 2001.04.01
Revised Date : 2005.02.05
Page No. : 2/4
100
75oC
125oC
25oC
10
hFE
hFE @ VCE=10V
1
0.1 1 10 10 0 1000
Collector Current-IC (mA)
Sat urati on Voltage & Col lector C urrent
1000
25oC
Current Gain & Collector Current
100000
Sat urati on Voltage & Collector Current
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
1200
1000
800
B
@ IC=5I
125oC
Collector Current-IC (mA)
Power Derating
75oC
25oC
75oC125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
Collector Current-IC (mA)
BE(sat)
V
@ IC=5I
Safe Operating Area
1
(A)
C
0.1
Collect or Curren t-I
PT=1mS
PT=100mS
PT=1S
600
400
B
PD(mW),Power Dissipation
200
0
0 20 40 60 80 100 120 140 160
Ta(oC), Ambtient Temperatuer
0.01
1 10 100 1000
Forwar d Vol t a ge- VCE (V)
HLB121A HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HA200112
Issued Date : 2001.04.01
Revised Date : 2005.02.05
Page No. : 3/4
A
α2
B
31
2
α3
C
D
H
I
α1
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
H2H2
L
L1
T2
T
T1
P1
G
H2AH2A
F1F2
P
Marking:
Pb Free Mark
Pb-Free: " . "
Normal: None
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
(Note)
Date Code
HB
121LA
D2
A
H1
D1
D
P2
Control Code
H3
H
H4
W1
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70 D 0.36 0.56
E-*1.27
F 3.36 3.76
G 0.36 0.56
H-*2.54
I-*1.27
α1
α2
α3
DIM Min. Max.
A 4.33 4.83
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
F1,F2 2.40 2.90
H 15.50 16.50
H1 8.50 9.50
H2 - 1
H2A - 1
H3 - 27
H4 - 21
L-11
L1 2.50 -
W
P 12.50 12.90
P1 5.95 6.75
P2 50.30 51.30
T - 0.55
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
-
*5°
-
*2°
-
*2°
*: Typical, Unit: mm
Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB121A HSMC Product Specification
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
T
P
Ramp-up
T
L
Ts
max
Ts
min
t
Temperature
S
Preheat
Ramp-down
Spec. No. : HA200112
Issued Date : 2001.04.01
Revised Date : 2005.02.05
Page No. : 4/4
P
t
L
Critical Zone
L
to T
P
T
25
t 25oC to Peak
Time
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
o
C/sec <3oC/sec
Preheat
- Temperature Min (Ts
- Temperature Max (Ts
- Time (min to max) (ts)
Tsmax to T
L
min
max
)
)
100
150
o
C
o
C
60~120 sec
o
C
150
o
200
C
60~180 sec
- Ramp-up Rate <3oC/sec <3oC/sec
Time mai n tained abov e :
- T e mperature (T
- Time (t
)
L
)
L
o
C
183
60~150 sec
217oC
60~150 sec
Peak T e mperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (t
)
P
10~30 sec 20~40 sec
Ramp-down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices.
Pb-Free devices. 260oC +0/-5oC
HLB121A HSMC Product Specification
o
245
C ±5oC 5sec ±1sec
5sec ±1sec
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