Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HJ122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ122 is designed for use in general purposes and low speed
switching applications.
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 1/4
Features
• High DC current gain
• Built-in a damper diode at E-C
TO-252
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
BVEBO 5 - - V IE=1mA
ICBO - - 10 uA VCB=100V
ICEO - - 10 uA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=4A, IB=16mA
*VCE(sat)2 - - 4 V IC=8A, IB=80mA
*VBE(sat) - - 4.5 V IC=8A, IB=80mA
*VBE(on) - - 2.8 V VCE=4V, IC=4A
*hFE1 1 - 12 K VCE=4V, IC=4A
*hFE2 100 - - VCE=4V, IC=8A
Cob - - 200 pF VCB=10V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HJ122 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 2/4
10000
1000
hFE @ VCE=4V
100
hFE
10
1
1 10 100 1000 10000
Collect o r Current ( mA)
On Voltage & C ollector Current
10000
Cur rent Gain & Col l ect or Current
10000
BE(sat)
V
1000
Saturation Voltage (mV)
100
100 1000 10000
@ IC=100I
CE(sat)
V
@ IC=100I
Collector Current ( m A )
B
B
Swi tchi ng Time & Col lector Current
Sat urati on Voltage & Collector Cu rrent
10
VCC=30V, IC=250IB1=-250I
B2
Tstg
1000
On Voltage (mV)
100
1 10 100 1000 10000
BE(on)
V
@ VCE=4V
Collector Current ( m A )
Capacitance & Rev erse-Biased Voltage
1000
100
Capacitan ce (pF)
Cob
1
Tf
Switchin g T imes ( us)
0.1
110
Ton
Collector Current ( A)
Safe Operating Area
100000
PT=1ms
10000
(mA)
C
1000
100
Collector Current- I
PT=100ms
PT=1s
10
10
0.1 1 10 100
Reverse-Biased Vol t a ge ( V)
1
1 10 100
Forward-VCE (V)
HJ122 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 3/4
25
20
15
10
PD(W ) , Power Dis s ip ation
5
0
0 50 100 150 200
PD - Tc
Temperatu re-Tc (oC)
HJ122 HSMC Product Specification
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 4/4
A
B
L
F
G
C
D
Marking:
Date Code
HJ
212
Control Code
Style: Pin 1.Base 2.Collector 3.Emitter
3
H
E
K
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code: J
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.0866 0.1102 2.20 2.80
B 0.0650 0.0768 1.65 1.95 H - *0.0906 - *2.30
C 0.0354 0.0591 0.90 1.50 I - 0.0354 - 0.90
D 0.0177 0.0236 0.45 0.60 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2125 0.2283 5.40 5.80 L 0.0551 0.0630 1.40 1.60
Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HJ122 HSMC Product Specification
Loading...