Datasheet HIRF630 Datasheet (HSMC)

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5

HIRF630

N - Channel MOSFETs

Description

Dynamic dv / dt Rating

Repetitive Avalanche Rated

•

Fast Switching

•

Ease of Paralleling

•

Simple Drive Requirements

•

This N - Channel MOSFETs provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Maximum Temperatures

•

(Ta=25°C)

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature..................................................................................... 150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Tc=25°C) .................................................................................... 74 W

Maximum Voltages and Currents (Tc=25°C)

•

Drain To Source Breakdown Voltage................................................................................ 200 V

Gate To Source Voltage................................................................................................... ± 20 V

Continuous Source Current.................................................................................................. 9 A

Pulsed Drain Current.......................................................................................................... 36 A

Characteristics

(Ta=25°C)

Symbol Parameter Max. Units

ID Tc=25°C

Continuous Drain Current, VGS at 10V 9 A

EAS Single Pulse Aval anche Ener g y (1) 250 mJ

IAR Avalanche Current (2) 9 A

EAR Repetitive Avalanche Energy (2) 7.4 mJ

dv / dt Peak Diode Recovery dv / dt (3) 5 V / ns

Note : VDD=50V, starting TJ=25°C, L=4.6mH, RQ=25Ω, IAS=9A
Repetitive rating; width limited by max. Junction temperature. I

≤

9A, di/dt≤120A / us, V

SD

DD

≤

V

(BR)DSS

, T

≤

150°C

J

Thermal Resistance

Symbol Parameter Min. Typ. Max. Units

RθJC

RθCS

RθJA

Junction to Case - - 1.7
Case to Sink, Flat, Greased Surface - 0.5 ­Junction to Ambient - - 62

HSMC Product Specification

C/W

°

HI-SINCERITY

MICROELECTRONICS CORP.

(Ta=25°C)

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

V(BR)DSS 200 - - V ID=100uA

VGS(th) 2 - 4 V VDS=4V, ID=250uA

IDSS - - 25 uA VDS=200V
IGSS - - 100 nA VGS=20V
IGSS - - -100 nA VGS=-20V

Qg - - 40 nC ID=10A
Qgs - - 8 nC VDS=200V
Qgd - - 10 nC VGS=10V

ton - 200 - nS VDD=100V

td(off) - 90 - nS ID=5A

tf - 6 0 - nS VGS=10V

VDS(on) - - 2 V ID=5.0A, VG = 10V

ID(on) 9 - - A VDS=10V, VGS=10V

RDS(on) - - 0.4

Ciss - 800 - pF VGS=0V

Coss - 240 - pF VDS=25V

Crss - 90 - pF f=1MHz

Ω

VGS=10V, ID = 5.4A

Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 2/5

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 3/5

14

12

10

VGS=10

8

6

4

Drain-Source Cur rent (A)

2

0

0246810

On-Region C ha racteri stic

8V

7V

6V

5V

4V

Drain-Source Voltage (V)

Drain Current Variation with Gate Voltage &

10

8

6

4

Drain-Source Cur rent (A)

2

0

02468

Temperature

TJ=125°C

TJ=25°C

Gate -Source Voltage (V)

On Resistance Variation with Temperature

2.5
ID= 3.5 A

2.3

GS

= 10 V

V

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

Norm alize d Drain-Source O n-Resistance

0.5

25 50 75 100 125 150

3000

2500

2000

1500

1000

Capac itance (pF)

500

0

0 1020304050

Junction Temperature (ºC)

Capacitance Characteristics

Crss

Drain-Source Voltage (V)

Ciss

Coss

Transconductance Variation with Drain Current

7

6

5

4

3

2

gFS,Transconductance (S)

1

0

0246810

& Temperature

Drain Curre nt (A)

TJ= 25°C

J

=125°C

T

Body Di ode Forward Voltage Variati on with

10

8

6

4

Reverse Drain Current (A)

2

0

0.2 0.4 0.6 0.8 1 1.2

Curren t & Temper ature

TJ= 25°C

Body Diode Forward Vol t ag e ( V)

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 4/5

Brea kdown Voltage Varia tion w ith Temperature

1.16

1.14

1.12

1.10

1.08

1.06

Voltage

1.04

1.02

Norm alize d Drain-Source Brea kdown

1.00

0.98
25 50 75 100 125 150

Junction Temperature (°C)

1.00

0.5

0.2

ID=250 uA

100

VGS=10 V
Single Pulse

C

=25°C

T

10

1

Drain-Source Current (A)

0

0.1 1 10 100 1000

Transient Thermal Response Curve

Max i mum Sa fe Operating Area

DS(on)

R

Line

Drain-Source Voltage (V)

100us

1ms

10ms

100ms

DC

0.10

Resistance

r(t) Normalized Effective Transient Thermal

0.01

0.1

0.05

0.02

0.01

Single Pulse

0.01 0.1 1 10 100 1000

Time (ms)

RθJC(t) = r(t) * RθJC(t)
RθJC =1.7 °C / W

P(pk)

t1

t2

TJ-TC=P* RθJC(t)
Duty Cycle,D=t1/t2

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

TO-220AB Dimension

A B

D

H

I

G

Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 5/5

Marking :

E

M

C

K

HSMC Logo

Part Number

Date Code

Style : Pin 1.Gate 2.Drain 3.Source

Product Series

Rank

3
2

N

4

1

O

DIM

Min. Max. Min. Max.

DIM

P

3-Lead TO-220AB Plastic Package

HSMC Package Code : E

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25

Notes :

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.

*:Typical

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

•

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.

Head Office And Factory :

•

Head Office

Tel : [phone] Fax : [phone]

•

Factory 1 :

Tel : [phone]~5 Fax : [phone]

•

Factory 2 :

Tel : [phone] Fax : [phone]

(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

HSMC Product Specification