Datasheet hip6602 Datasheets

S

®

D

N

E

M

M

O

N

B

I

S

S

O

P

0

6

6

L

S

I

(

C

E

R

T

O

B

U

S

E

L

1

6

L

S

I

,

4

R

O

F

D

E

T

U

T

I

T

S

Data Sheet August 2000

,

A

4

1

6

W

E

N

O

R

P

E

S

I

d

n

a

S

T

C

U

D

L

)

B

4

1

6

6

N

G

I

S

E

D

HIP6602

FN4838.1

Dual Channel Synchronous-Rectified
Buck MOSFET Driver

The HIP6602 is a high frequency, two power channel
MOSFET driver specifically designed to drive four power
N-Channel MOSFETs in a synchronous-rectified buck
converter topology. These drivers combined with a HIP63xx
series of Multi-Phase Buck PWM controller and Intersil’s
UltraFETs® form a complete core voltage regulator solution
for advanced microprocessors.

The HIP6602 drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage flexibility provides the
advantage of optimizing applications involving trade-offs
between switching losses and conduction losses.

The output drivers in the HIP6602 have the capacity to
efficiently switch power MOSFETs at high frequencies. Each
driver is capable of driving a 3000pF load with a 30ns
propagation delay and 50ns transition time. This device
implements bootstrapping on the upper gates with only a
single external capacitor required for each power channel.
This reduces implementation complexity and allows the use
of higher performance, cost effective, N-Channel MOSFETs.
Adaptive shoot-through protection is integrated to prevent
both MOSFETs from conducting simultaneously.

Ordering Information

Features

• Drives Four N-channel MOSFETs

• Adaptive Shoot-Through Protection

• Internal Bootstrap Devices

• Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

• Small 14-Lead SOIC Package

• 5V to 12V Gate-Drive Voltages for Optimal Efficiency

• Three-State Input for Bridge Shutdown

• Supply Under-Voltage Protection

Applications

• Core Voltage Supplies for Intel Pentium® III and AMD®
AthlonTM Microprocessors.

• High Frequency Low Profile DC/DC Converters

• High Current Low Voltage DC/DC Converters

Pinout

HIP6602CB

(SOIC)

TOP VIEW

PART NUMBER

HIP6602CB 0 to 85 14 Ld SOIC M14.15
HIP6602CB-T 14 Ld SOIC Tape and Reel

TEMP. RANGE

(°C) PACKAGE PKG. NO.

PWM1
PWM2

GND

LGATE1

PVCC

PGND

LGATE2

1

1
2

2
3

4

5
6

14
13
12
11
10

9
87

VCC

PHASE1
UGATE1
BOOT1
BOOT2
UGATE2
PHASE2

1

Pentium

® is a registered trademark of Intel Corporation.; AMD® is a registered trademark of Advanced Micro Devices, Inc.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

UltraFET® is a registered trademark of Intersil Corporation. Athlon™ is a trademark of Advanced Micro Devices, Inc.

1-888-INTERSIL or 1-888-468-3774

| Copyright © Intersil Corporation 2000, 2005

Block Diagram

HIP6602

PVCC

VCC

PWM1

PWM2

GND

+5V

10K

10K

+5V

10K

10K

HIP6602

CONTROL

LOGIC

SHOOT-

THROUGH

PROTECTION

PGND

PVCC

SHOOT-

THROUGH

PROTECTION

PGND

BOOT1

UGATE1

PHASE1

PVCC

LGATE1

PGND

BOOT2

UGATE2

PHASE2

PVCC

LGATE2

Typical Application - 2 Channel Converter Using a HIP6302 and a HIP6602 Gate Driver

+5V

BOOT1

UGATE1

PHASE1

LGATE1

PVCC

BOOT2

UGATE2

PHASE2

LGATE2

PGND

+12V

+V

+5V/12V

+12V

PGOOD

VID

FB

VSEN

FS/DIS

COMP

MAIN

CONTROL

HIP6302

GND

V

CC

ISEN1

PWM1

PWM2

ISEN2

+12V

VCC

PWM1

DUAL
DRIVER
HIP6602

PWM2

GND

CORE

2

HIP6602

Typical Application - 4 Channel Converter Using a HIP6303 and HIP6602 Gate Driver

PGOOD

EN

VID

FB

VSEN

FS/DIS

COMP

MAIN

CONTROL

HIP6303

GND

V

CC

ISEN1

PWM1

PWM2

ISEN2

ISEN3
PWM3
PWM4

ISEN4

+5V

+12V

VCC

PWM1

PWM2

+12V

VCC

DUAL
DRIVER
HIP6602

BOOT1

UGATE1

PHASE1

LGATE1

PVCC

BOOT2

UGATE2

PHASE2

LGATE2

PGNDGND

BOOT3

UGATE3

PHASE3

+5V/12V

+12V

+12V

+12V

+V

CORE

LGATE3

DUAL

DRIVER

PVCC

+5V/12V

HIP6602

PWM3

PWM4

BOOT4

UGATE4

PHASE4

LGATE4

PGNDGND

+12V

3

HIP6602

Absolute Maximum Ratings Thermal Information

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V

Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V

BOOT Voltage (V

BOOT

- V

) . . . . . . . . . . . . . . . . . . . . . . .15V

PHASE

Input Voltage (VPWM). . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V

UGATE. . . . . . . . . . . . . . . . . . . . . .V

LGATE. . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to V

PHASE

- 0.3V to V

BOOT
PVCC

+ 0.3V
+ 0.3V

ESD Rating

Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . .3kV

Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V

Operating Conditions

Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . . 0°C to 85°C

Maximum Operating Junction Temperature. . . . . . . . . . . . . . .125°C

Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%

Supply Voltage Range PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

1. θ

JA

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VCC SUPPLY CURRENT

Bias Supply Current I
Power Supply Current I

VCC

PVCC

POWER-ON RESET

VCC Rising Threshold 9.7 9.95 10.4 V
VCC Falling Threshold 9.0 9.2 9.5 V

PWM INPUT

Input Current I

PWM

PWM Rising Threshold V
PWM Falling Threshold V
UGATE Rise Time TR
LGATE Rise Time TR
UGATE Fall Time TF
LGATE Fall Time TF
UGATE Turn-Off Propagation Delay TPDL
LGATE Turn-Off Propagation Delay TPDL

UGATEVPVCC

LGATEVPVCC

UGATEVPVCC

LGATEVPVCC

UGATEVPVCC
LGATEVPVCC

Shutdown Window 1.4 - 3.6 V
Shutdown Holdoff Time - 230 - ns

OUTPUT

Upper Drive Source Impedance R

Upper Drive Sink Impedance R

Lower Drive Source Current I

Lower Drive Sink Impedance R

UGATEVVCC

UGATEVVCC

LGATE

LGATE

f

= 500kHz, V

PWM

f

= 500kHz, V

PWM

V

= 0 or 5V (See Block Diagram) - 500 - µA

PWM

= 12V 3.45 3.6 - V

PVCC

= 12V - 1.45 1.55 V

PVCC

= V
= V
= V
= V

= V
= V

= 12V, V

V

= V

VCC

= 12V, V
= V

V

VCC

V

= 12V, V

VCC

V

= V

VCC

V

= 12V, V

VCC

Thermal Resistance (Note 1) θ

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

Maximum Junction Temperature (Plastic Package) . . . . . . . .150°C

Maximum Storage Temperature Range . . . . . . . . . .-65°C to 150°C

Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300°C

(SOIC - Lead Tips Only)

= 12V - 3.7 5.0 mA

PVCC

= 12V - 2.0 4.0 mA

PVCC

= 12V, 3nF Load - 20 - ns

VCC

= 12V, 3nF Load - 50 - ns

VCC

= 12V, 3nF Load - 20 - ns

VCC

= 12V, 3nF Load - 20 - ns

VCC

= 12V, 3nF Load - 30 - ns

VCC

= 12V, 3nF Load - 20 - ns

VCC

= 5V - 1.7 3.0 Ω

PVCC

= 12V - 3.0 5.0 Ω

PVCC

= 5V - 2.3 4.0 Ω

PVCC

= 12V - 1.1 2.0 Ω

PVCC

= 5V 400 580 - mA

PVCC

= 12V 500 730 - mA

PVCC

= 5V or 12V - 1.6 4.0 Ω

PVCC

(°C/W)

JA

4

HIP6602

Functional Pin Descriptions

PWM1 (Pin 1) and PWM2 (Pin 2)

The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.

GND (Pin 3)

Bias and reference ground. All signals are referenced to this
node.

LGATE1 (Pin 4) and LGATE2 (Pin 7)

Lower gate drive outputs. Connect to gates of the low-side
power N-Channel MOSFETs.

PVCC (Pin 5)

This pin supplies the upper and lower gate drivers bias.
Connect this pin from +12V down to +5V.

PGND (Pin 6)

This pin is the power ground return for the lower gate
drivers.

PHASE2 (Pin 8) and PHASE1 (Pin 13)

Connect these pins to the source of the upper MOSFETs
and the drain of the lower MOSFETs. The PHASE voltage is
monitored for adaptive shoot-through protection. These pins
also provide a return path for the upper gate drive.

UGATE2 (Pin 9) and UGATE1 (Pin 12)

Upper gate drive outputs. Connect to gate of high-side
power N-Channel MOSFETs.

BOOT 2 (Pin 10) and BOOT 1 (Pin 11)

Floating bootstrap supply pins for the upper gate drivers.
Connect the bootstrap capacitor between these pins and the

PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFETs. See the Internal Bootstrap
Device section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.

VCC (Pin 14)

Connect this pin to a +12V bias supply. Place a high quality
bypass capacitor from this pin to GND. To prevent forward
biasing an internal diode, this pin should be more positive
then PVCC during converter start-up.

Description

Operation

Designed for versatility and speed, the HIP6602 two channel,
dual MOSFET driver controls both high-side and low-side
N-Channel FETs from two externally provided PWM signals.

The upper and lower gates are held low until the driver is
initialized. Once the VCC voltage surpasses the VCC Rising
Threshold (See Electrical Specifications), the PWM signal
takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see Timing
Diagram). After a short propagation delay [TPDL
lower gate begins to fall. Typical fall times [TF

LGATE

provided in the Electrical Specifications section. Adaptive
shoot-through circuitry monitors the LGATE voltage and
determines the upper gate delay time [TPDH

UGATE

on how quickly the LGATE voltage drops below 1.0V. This
prevents both the lower and upper MOSFETs from
conducting simultaneously or shoot-through. Once this delay
period is complete the upper gate drive begins to rise
[TR

] and the upper MOSFET turns on.

UGATE

LGATE

] are

] based

], the

Timing Diagram

PWM

UGATE

LGATE

TPDL

LGATE

TPDH

UGATE

TF

LGATE

5

TR

UGATE

TPDL

UGATE

TPDH

TF

UGATE

LGATE

TR

LGATE

HIP6602

A falling transition on PWM indicates the turn-off of the
upper MOSFET and the turn-on of the lower MOSFET. A
short propagation delay [TPDL
before the upper gate begins to fall [TF

] is encountered

UGATE

UGATE

]. Again, the
adaptive shoot-through circuitry determines the lower gate
delay time, TPDH

. The PHASE voltage is monitored

LGATE

and the lower gate is allowed to rise after PHASE drops
below 0.5V. The lower gate then rises [TR

LGATE

], turning

on the lower MOSFET.

Three-State PWM Input

A unique feature of the HIP6602 drivers is the addition of a
shutdown window to the PWM input. If the PWM signal
enters and remains within the shutdown window for a set
holdoff time, the output drivers are disabled and both
MOSFET gates are pulled and held low. The shutdown state
is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.

Adaptive Shoot-Through Protection

The drivers incorporate adaptive shoot-through protection to
prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to rise.

During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1.0V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the PHASE voltage during UGATE turn-off. Once
PHASE has dropped below a threshold of 0.5V, the LGATE
is allowed to rise. If the PHASE does not drop below 0.5V
within 250ns, LGATE is allowed to rise. This is done to
generate the bootstrap refresh signal. PHASE continues to
be monitored during the lower gate rise time. If the PHASE
voltage exceeds the 0.5V threshold during this period and
remains high for longer than 2µs, the LGATE transitions low.
This is done to make the lower MOSFET emulate a diode.
Both upper and lower gates are then held low until the next
rising edge of the PWM signal.

Power-On Reset (POR) Function

During initial start-up, the VCC voltage rise is monitored and
gate drives are held low until a typical VCC rising threshold
of 9.95V is reached. Once the rising VCC threshold is
exceeded, the PWM input signal takes control of the gate
drives. If VCC drops below a typical VCC falling threshold of

9.2V during operation, then both gate drives are again held
low. This condition persists until the VCC voltage exceeds
the VCC rising threshold.

Internal Bootstrap Device

Both drivers feature an internal bootstrap device. Simply
adding an external capacitor across the BOOT and PHASE
pins completes the bootstrap circuit.

The bootstrap capacitor must have a maximum voltage
rating above PVCC + 5V. The bootstrap capacitor can be
chosen from the following equation:

Q

C

BOOT

Where Q
charge the gate of the upper MOSFET. The ∆V

GATE

------------------------≥

∆V

BOOT

is the amount of gate charge required to fully

GATE

BOOT

term is

defined as the allowable droop in the rail of the upper drive.
As an example, suppose a HUF76139 is chosen as the

upper MOSFET. The gate charge, Q

, from the data

GATE

sheet is 65nC for a 10V upper gate drive. We will assume a
200mV droop in drive voltage over the PWM cycle. We find
that a bootstrap capacitance of at least 0.325µF is required.
The next larger standard value capacitance is 0.33µF.

Gate Drive Voltage Versatility

The HIP6602 provides the user flexibility in choosing the
gate drive voltage. Simply applying a voltage from 5V up to
12V on PVCC will set both driver rail voltages.

Power Dissipation

Package power dissipation is mainly a function of the switching
frequency and total gate charge of the selected MOSFETs.
Calculating the power dissipation in the driver for a desired
application is critical to ensuring safe operation. Exceeding the
maximum allowable power dissipation level will push the IC
beyond the maximum recommended operating junction
temperature of 125°C. The maximum allowable IC power
dissipation for the 14 lead SOIC package is approximately
1000mW. Improvements in thermal transfer may be gained by
increasing the PC board copper area around the HIP6602.
Adding a ground pad under the IC to help transfer heat to the
outer peripheral of the board will help. Also keeping the leads to
the IC as wide as possible and widening this these leads as
soon as possible to further enhance heat transfer will also help.

When designing the driver into an application, it is
recommended that the following calculation be performed to
ensure safe operation at the desired frequency for the
selected MOSFETs. The total chip power dissipation is
approximated as:

3

P = 1.05 x fSW x V

where f
and Q

is the switching frequency of the PWM signal. QU

sw

is the upper and lower gate charge determined by

L

MOSFET selection and any external capacitance added to
the gate pins. The I
of the driver and is typically 40mW.

The 1.05 term is a correction factor derived from the
following characterization. The base circuit for characterizing
the drivers for different loading profiles and frequencies is
provided. C

and CL are the upper and lower gate load

U

capacitors. Decoupling capacitors [0.15µF] are added to the

_

[ (QU1 + QU2) + (QL1 + QL2)] + I

PVCC

2

VCC product is the quiescent power

DDQ

DDQ

x VCC

6

HIP6602

PVCC and VCC pins. The bootstrap capacitor value in the
test circuit is 0.01µF.

The power dissipation approximation is a result of power
transferred to and from the upper and lower gates. But, the
internal bootstrap device also dissipates power on-chip
during the refresh cycle. Expressing this power in terms of
the upper MOSFET total gate charge is explained below.

The bootstrap device conducts when the lower MOSFET or
its body diode conducts and pulls the PHASE node toward
GND. While the bootstrap device conducts, a current path is
formed that refreshes the bootstrap capacitor. Since the
upper gate is driving a MOSFET, the charge removed from
the bootstrap capacitor is equivalent to the total gate charge
of the MOSFET. Therefore, the refresh power required by
the bootstrap capacitor is equivalent to the power used to
charge the gate capacitance of the upper MOSFETs.

P

REFRESHfSW

where Q

LOSS

Q

LOSS

V

PVCC

==

fSWQUV

PVCC

is the total charge removed from the bootstrap

capacitors and provided to the upper gate loads.
In Figure 1, C

and CL values are the same and frequency

U

is varied from 10kHz to 2MHz. PVCC and VCC are tied
together to a +12V supply.

tied together and to a +12V supply. Figures 5 through 7
show the same characterization for PVCC tied to +5V
instead of +12V. The gate supply voltage, PVCC, within the
HIP6602 sets both upper and lower gate driver supplies at
the same 5V level for the last three curves.

Test Circuit

+5V OR +12V

0.15µF

0.15µF

+5V OR +12V

PVCC

VCC

PWM1

PGND

GND

PWM2

0.01µF

BOOT1

HIP6602

UGATE1
PHASE1

LGATE1

0.01µF

BOOT2

UGATE2
PHASE2

2N7002

C

L

2N7002

2N7002

100kΩ

C

U

C

U

+12V

Figure 2 shows the dissipation in the driver with 1nF loading
on both gates and each individually. Figure 3 is the same as
Figure 2 except the capacitance is increased to 3nF.

The impact of loading on power dissipation is shown in
Figure 4. Frequency is held constant while the gate
capacitors are varied from 1nF to 5nF. VCC and PVCC are

Typical Performance Curves

1200

CU = C

L

= 5nF

CU = C

L

= 4nF

0

0 500 1000 1500

FREQUENCY (kHz)

C

= CL = 2nF

U

C

= CL = 1nF

U

C

= C

U

= 3nF

L

PVCC = 12V

VCC = 12V

POWER (mW)

1000

800

600

400

200

LGATE2

2N7002

C

L

1200

PVCC = VCC = 12V

POWER (mW)

1000

800

600

400

200

0

C

= CL = 1nF

U

CL = 1nF, CU = 0nF

CU = 1nF, CL = 0nF

0 500 1000 2000

FREQUENCY (kHz)

1500

100kΩ

FIGURE 1. POWER DISSIPATION vs FREQUENCY FIGURE 2. 1nF LOADING PROFILE

7

Typical Performance Curves (Continued)

HIP6602

1200

PVCC = VCC = 12V

1000

C

= CL = 3nF

U

800

600

POWER (mW)

400

200

0

0 500 1000

FREQUENCY (kHz)

FIGURE 3. 3nF LOADING PROFILE FIGURE 4. POWER DISSIPATION vs LOADING

800

700

600

500

400

300

POWER (mW)

200

100

PVCC = 5V, VCC = 12V

CU = CL = 3nF

CU = 3nF, CL = 0nF

CL = 3nF, CU = 0nF

CU = CL =1nF

CU = CL = 5nF

CU = CL = 4nF

CU = CL = 2nF

1500

1200

PVCC = VCC = 12V

1000

500kHz

800

600

POWER (mW)

400

200

0

12345

GATE CAPACITANCE (CU = CL), (nF)

350

300

250

200

150

POWER (mW)

100

50

PVCC = 5V, VCC = 12V

CL = 1nF, CU = 0nF

200kHz

100kHz

30kHz

CU = CL = 1nF

CU = 1nF, CL = 0nF

10kHz

0

0 500 1500 2000

1000

FREQUENCY (kHz)

0

0 500 1000 1500 2000

FREQUENCY (kHz)

FIGURE 5. POWER DISSIPATION vs FREQUENCY, PVCC = 5V FIGURE 6. POWER DISSIPATION vs FREQUENCY, PVCC = 5V

600

PVCC = 5V,

VCC = 12V

POWER (mW)

500

2MHz

400

300

200

100

0

1.5MHz

500kHz

GATE CAPACITANCE (C

1MHz

200kHz

= CL), (nF)

U

100kHz

30kHz

54321

FIGURE 7. POWER DISSIPATION vs LOADING, PVCC = 5V

8

Small Outline Plastic Packages (SOIC)

HIP6602

N

INDEX
AREA

123

-A-

E

-B-

SEATING PLANE

D

A

-C-

0.25(0.010) BM M

H

L

h x 45

o

α

e

B

0.25(0.010) C AM BS

M

NOTES:

1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.

4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.

5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of

0.61mm (0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.

A1

C

0.10(0.004)

M14.15 (JEDEC MS-012-AB ISSUE C)

14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE

INCHES MILLIMETERS

SYMBOL

A 0.0532 0.0688 1.35 1.75 -

A1 0.0040 0.0098 0.10 0.25 -

B 0.013 0.020 0.33 0.51 9
C 0.0075 0.0098 0.19 0.25 ­D 0.3367 0.3444 8.55 8.75 3

E 0.1497 0.1574 3.80 4.00 4

e 0.050 BSC 1.27 BSC ­H 0.2284 0.2440 5.80 6.20 -

h 0.0099 0.0196 0.25 0.50 5

L 0.016 0.050 0.40 1.27 6
N14 147

o

α

0

o

8

o

0

o

8

Rev. 0 12/93

NOTESMIN MAX MIN MAX

-

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold b y de scr ip tion on ly. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or othe rwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

9