Datasheet HI-539 Datasheet (Intersil Corporation)

HI-539
Data Sheet July 1999
Precision, 4-Channel, Low-Level, Differential Multiplexer
The Intersil HI-539 is a monolithic, 4-Channel, differential multiplexer. Two digital inputs are provided for channel selection, plus an Enable input to disconnect all channels.
Performance is guaranteed for each channel over the voltage range ±10V, but is optimized for low level differential signals. Leakage current, for example, which varies slightly with input voltage, has its distribution centered at zero input volts.
In most monolithic multiplexers, the net differential offset due to thermal effects becomes significant for low level signals. This problem is minimized in the HI-539 by symmetrical placement of critical circuitry with respect to the few heat producing devices.
Supply voltages are ±15V and power consumption is only
2.5mW.
Ordering Information
TEMP.
PART NUMBER
RANGE (oC) PACKAGE
HI1-0539-5 0 to 75 16 Ld CERDIP F16.3 HI1-0539-8 -55 to 125 16 Ld CERDIP F16.3 HI3-0539-5 0 to 75 16 Ld PDIP E16.3 HI4P0539-5 0 to 75 20 Ld PLCC N20.35
PKG.
NO.
File Number
3149.2
Features
• Differential Performance, Typical:
-Low∆r
-Low∆I
, 125oC . . . . . . . . . . . . . . . . . . . . . . . . . .5.5
ON
, 125oC. . . . . . . . . . . . . . . . . . . . . . . 0.6nA
D(ON)
-Low∆ Charge Injection . . . . . . . . . . . . . . . . . . . . 0.1pC
- Low Crosstalk . . . . . . . . . . . . . . . . . . . . . . . . . . . -124dB
• Settling Time, ±0.01% . . . . . . . . . . . . . . . . . . . . . . .900ns
• Wide Supply Range . . . . . . . . . . . . . . . . . . . ±5V to ±18V
• Break-Before-Make Switching
• No Latch-Up
Applications
• Low Level Data Acquisition
• Precision Instrumentation
• Test Systems
TRUTH TABLE
ON CHANNEL TO
EN A
1
L X X None None HLL1A1B HLH2A2B HHL3A3B H H H 4A 4B
A
0
OUT A OUT B
Pinouts
A
EN
IN 1A IN 2A IN 3A IN 4A
OUT A
(CERDIP, PDIP)
TOP VIEW
1
0
2 3
V-
4 5 6 7 8
HI-539
1
16 15 14 13 12 11 10
9
A
1
GND V+ IN 1B IN 2B IN 3B IN 4B OUT B
HI-539
(PLCC)
TOP VIEW
0
A
EN
4
V-
IN 1A
5 6
NC
IN 2A
7
IN 3A
8
9
10 11 12 13
IN 4A
OUT ANCOUT B
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
1
A
NC
GND
193 2 201
18
V+
17
IN 1B
16
NC
15
IN 2B IN 3B
14
IN 4B
| Copyright © Intersil Corporation 1999
HI-539
Absolute Maximum Ratings Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
V+ or V- to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Analog Signal (VIN, V
). . . . . . . . . . . . . . . . . . . . . . . . . . V- to V+
OUT
Digital Input Voltage (VEN, VA) . . . . . . . . . . . . . . . . . . . . . . V- to V+
Analog Current (IN or OUT). . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range
HI-539-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
HI-539-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W)
CERDIP Package. . . . . . . . . . . . . . . . . 85 32
PDIP Package . . . . . . . . . . . . . . . . . . . 90 N/A
PLCC Package. . . . . . . . . . . . . . . . . . . 80 N/A
Maximum Junction Temperature
Ceramic Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175oC
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(PLCC - Lead Tips Only)
Electrical Specifications Supplies = ±15V, V
= 4V, VAH (Logic Level High) = 4V, VAL (Logic Level Low) = 0.8V,
EN
Unless Otherwise Specified
-8 -5 UNITSMIN TYP MAX MIN TYP MAX
PARAMETER
TEST
CONDITIONS
TEMP
(oC)
DYNAMIC CHARACTERISTICS
Access Time, t
A
25 - 250 750 - 250 750 ns
Full - - 1,000 - - 1,000 ns
Break-Before-Make Delay, t
OPEN
25 30 85 - 30 85 - ns
Full 30 - - 30 - - ns
Enable Delay (ON), t
ON(EN)
25 - 250 750 - 250 750 ns
Full - - 1,000 - - 1,000 ns
Enable Delay (OFF), t
OFF(EN)
25 - 160 650 - 160 650 ns
Full - - 900 - - 900 ns Settling Time To 0.01% 25 - 0.9 - - 0.9 - µs Charge Injection (Output) Full - 3 - - 3 - pC ∆ Charge Injection (Output) Full - 0.1 - - 0.1 - pC Charge Injection (Input) Full - 10 - - 10 - pC Differential Crosstalk Note 4 25 - -124 - - -124 - dB Single Ended Crosstalk Note 4 25 - -100 - - -100 - dB Channel Input Capacitance,
C
S(OFF)
Channel Output Capacitance, C
D(OFF)
Channel On Output Capacitance, C
D(ON)
Input to Output Capacitance, C
DS(OFF)
Digital Input Capacitance, C
A
Note 5 Full - 0.08 - - 0.08 - pF
Full - 5 - - 5 - pF
Full - 7 - - 7 - pF
Full - 17 - - 17 - pF
Full - 3 - - 3 - pF
DIGITAL INPUT CHARACTERISTICS
Input Low Threshold, V Input High Threshold, V
AL
AH
Input Leakage Current (High), I Input Leakage Current (Low), I
AH
AL
Full - - 0.8 - - 0.8 V
Full 4.0 - - 4.0 - - V
Full - - 1 - - 1 µA
Full - - 1 - - 1 µA
2
HI-539
Electrical Specifications Supplies = ±15V, V
= 4V, VAH (Logic Level High) = 4V, VAL (Logic Level Low) = 0.8V,
EN
Unless Otherwise Specified (Continued)
-8 -5 UNITSMIN TYP MAX MIN TYP MAX
PARAMETER
TEST
CONDITIONS
TEMP
(oC)
ANALOG CHANNEL CHARACTERISTICS
Analog Signal Range, V On Resistance, r
ON
IN
VIN = 0V 25 - 650 850 - 650 850
Full -10 - +10 -10 - +10 V
Full - 950 1.3K - 800 1K
VlN = ±10V 25 - 700 900 - 700 900
Full - 1.1K 1.4K - 900 1.1K
r
(Side A-Side B) VIN = 0V 25 - 4.0 24 - 4.0 24
ON,
Full - 4.75 28 - 4.0 24
VlN = ±10V 25 - 4.5 27 - 4.5 27
Full - 5.5 33 - 4.5 27
Off Input Leakage Current, I
I
(Side A-Side B) Condition 0V 25 - 3 - - 3 - pA
S(OFF),
S(OFF)
Condition 0V (Note 2)
Condition ±10V (Note 2)
25 -30- -30-pA
Full - 2 10 - 0.2 1 nA
25 - 100 - - 100 - pA
Full - 5 25 - 0.5 2.5 nA
Full - 0.2 2 - 0.02 0.2 nA
Condition ±10V 25 - 10 - - 10 - pA
Full - 0.5 5 - 0.05 0.5 nA
Off Output Leakage Current, I
D(OFF)
I
(Side A-Side B) Condition 0V 25 - 3 - - 3 - pA
D(OFF),
Condition 0V (Note 2)
Condition ±10V (Note 2)
25 -30- -30-pA
Full - 2 10 - 0.2 1 nA
25 - 100 - - 100 - pA
Full - 5 25 - 0.5 2.5 nA
Full - 0.2 2 - 0.02 0.2 nA
Condition ±10V 25 - 10 - - 10 - pA
Full - 0.5 5 - 0.05 0.5 nA
On Channel Leakage Current, I
I
(Side A-Side B) Condition 0V 25 - 10 - - 10 - pA
D(ON),
D(ON)
Condition 0V (Note 2)
Condition ±10V (Note 2)
25 -50- -50-pA
Full - 5 25 - 0.5 2.5 nA
25 - 150 - - 150 - pA
Full - 6 40 - 0.8 4.0 nA
Full - 0.5 5 - 0.05 0.5 nA
Condition ±10V 25 - 30 - - 30 - pA
Full - 0.6 6 - 0.08 0.8 nA
Differential Offset Voltage, V
OS
Note 3 25 - 0.02 - - 0.02 - µV
Full - 0.70 - - 0.08 - µV
POWER SUPPLY CHARACTERISTICS
Power Dissipation, P
D
25 - 2.3 - - 2.3 - mW
Full - - 45 - - 45 mW
Current, l+ 25 - 0.150 - - 0.150 - mA
Full - - 2.0 - - 2.0 mA
3
HI-539
Electrical Specifications Supplies = ±15V, V
= 4V, VAH (Logic Level High) = 4V, VAL (Logic Level Low) = 0.8V,
EN
Unless Otherwise Specified (Continued)
-8 -5 UNITSMIN TYP MAX MIN TYP MAX
PARAMETER
TEST
CONDITIONS
TEMP
(oC)
Current, l- 25 - 0.001 - - 0.001 - mA
Full - - 1.0 - - 1.0 mA
Supply Voltage Range Full ±5 ±15 ±18 ±5 ±15 ±18 V
NOTES:
2. See Figures 2B, 2C, 2D. The condition ±10V means: l
S(OFF)
and I
D(OFF)
: (VS = +10V, VD = -10V), then (VS = -10V, VD = +10V) I
: (+10V, then -10V)
D(ON)
3. VOS(Exclusive of thermocouple effects) = rON∆I
4. VlN = 1kHz, 15V
on all but the selected channel. See Figure 7.
P-P
D(ON)
+ I
D(ON)∆rON
. See Applications section for discussion of additional VOS error.
5. Calculated from typical Single-Ended Crosstalk performance.
T est Cir cuits and Waveforms
100µA
V
2
Unless Otherwise Specified TA = 25oC, V+ = +15V, V - = -15V, VAH = 4V and VAL = 0.8V
VIN = 0V
800
700
OUTIN
V
V
IN
HI-539
rON =
2
100µA
600
ON RESISTANCE ()
500
-25 0 25 50 75 100 125
-50 TEMPERATURE (
o
C)
FIGURE 1A. TEST CIRCUIT FIGURE 1B. ON RESISTANCE vs TEMPERATURE
900
125oC
800
700
600
ON RESISTANCE ()
500
400
-12
-10 -8 -6 -4 -2 0 2 4 8 10612
25oC
-55oC
ANALOG INPUT (V)
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
ON RESISTANCE (k)
0.9
0.8
0.7
0.6
0.5 5 7 9 11 13 15 17
SUPPLY VOLTAGE (±V)
VIN = 0V
FIGURE 1C. ON RESISTANCE vs ANALOG INPUT VOLTAGE FIGURE 1D. ON RESISTANCE vs SUPPLY VOLTAGE
FIGURE 1. ON RESISTANCE
4
HI-539
T est Cir cuits and Waveforms
10
I
D(ON)
1
LEAKAGE CURRENT (nA)
25
50 75 100 125
I
D(OFF)
TEMPERATURE (
Unless Otherwise Specified TA = 25oC, V+ = +15V, V - = -15V, VAH = 4V and VAL = 0.8V (Continued)
= I
S(OFF)
o
C)
±10V
FIGURE 2A. LEAKAGE CURRENT vs TEMPERATURE FIGURE 2B. I
HI-539
OUT A
I
A
S(OFF)
±10V
±
10V
A
0
A
1
EN
0.8V
±
10V
HI-539
EN
A
0
A
1
Similar Connection For Side “B”
TEST CIRCUIT (NOTE 6)
D(OFF)
HI-539
A
0
EN
A
1
OUT A
OUT A
4V
0.8V
I
A
D(OFF)
±
10V
A
I
D(ON)
±10V
Similar Connection For Side “B”
FIGURE 2C. I
TEST CIRCUIT (NOTE 6) FIGURE 2D. I
S(OFF)
Similar Connection For Side “B”
TEST CIRCUIT (NOTE 6)
D(ON)
NOTE:
6. Three measurements = ±10V, 10V, and 0V.
±
FIGURE 2. LEAKAGE CURRENT
+15V/+10V
14
12
10
8
6
4
I+ SUPPLY CURRENT (mA)
2
0
100Hz
1kHz 10kHz 100kHz 1MHz 3MHz 10MHz
FUNCTIONAL LIMIT
V
SUPPLY
V
SUPPLY
TOGGLE FREQUENCY
= ±15V
= ±10V
50
V
A
HIGH = 4.0V LOW = 0V
V
A
50% DUTY CYCLE
A
1
HI-539
A
0
5V
EN
GND
Similar Connection For Side “B”
A
V+
IN 1A
IN 2A
IN 3A
IN 4A
OUT A
V-
A
+I
-I
-15V/-10V
FIGURE 3A. SUPPLY CURRENT vs TOGGLE FREQUENCY FIGURE 3B. TEST CIRCUIT
FIGURE 3. DYNAMIC SUPPLY CURRENT
SUPPLY
SUPPLY
+10V/+5V
-10V/-5V
10M
14pF
5
HI-539
T est Cir cuits and Waveforms
320
300
280
260
240
ACCESS TIME (ns)
220
200
3
456789101112131415
LOGIC LEVEL (HIGH) (V)
Unless Otherwise Specified TA = 25oC, V+ = +15V, V - = -15V, VAH = 4V and VAL = 0.8V (Continued)
A
1
A
0
50
V
A
5V
EN
HI-539
GND
FIGURE 4A. ACCESS TIME vs LOGIC LEVEL (HIGH) FIGURE 4B. TEST CIRCUIT
= 4V
V
AH
50%
ADDRESS DRIVE (V
)
A
0V
VA INPUT 2V/DIV.
S1 ON
+15V
V+
IN 1A
IN 2A,
IN 3A
IN 4A
OUT A
V-
-15V
±
10V
±10V
k
50
10
pF
+10V
10%
t
A
OUTPUT
-10V
200ns/DIV.
OUTPUT 5V/DIV.
S4 ON
FIGURE 4C. MEASUREMENT POINTS FIGURE 4D. WAVEFORMS
FIGURE 4. ACCESS TIME
+15V
0V
VAH = 4V
50% 50%
t
ADDRESS DRIVE (V
OPEN
)
A
OUTPUT
HI-539
A
1
A
0
EN
5V
50V
A
IN 2, IN 3A
GND
V+
IN 1A
IN 4A
OUT A
V-
-15V
Similar connection for side “B”
700
+5V
V
OUT
12.5pF
FIGURE 5A. MEASUREMENT POINTS FIGURE 5B. TEST CIRCUIT
6
HI-539
T est Cir cuits and Waveforms
VAH = 4V
Unless Otherwise Specified TA = 25oC, V+ = +15V, V - = -15V, VAH = 4V and VAL = 0.8V (Continued)
VA INPUT 2V/DIV.
S1 ON
100ns/DIV.
S4 ON
OUTPUT 1V/DIV.
FIGURE 5C. WAVEFORMS
FIGURE 5. BREAK-BEFORE-MAKE DELAY
+15V
HI-539
V+
IN 1A
+10V
50%
90%
t
ON(EN)
50% ENABLE DRIVE (V
0V
OUTPUT
10%
0V
t
OFF(EN)
)
A
V
A
50
A A
EN
1
0
GND
IN 2A THRU
Similar connection for side “B”
FIGURE 6A. MEASUREMENT POINTS FIGURE 6B. TEST CIRCUIT
ENABLE
DRIVE
2V/DIV.
DISABLED
ENABLED
(S1 ON)
OUTPUT
2V/DIV.
IN 4A
OUT A
V-
-15V
700
V
OUT
12.5pF
100ns/DIV.
FIGURE 6C. WAVEFORMS
FIGURE 6. ENABLE DELAYS
7
HI-539
T est Cir cuits and Waveforms
HI-539
1kHz, 15V
P-P
350
AD606 or BB3630, for Example
FIGURE 7A. SINGLE-ENDED CROSSTALK TEST CIRCUIT FIGURE 7B. DIFFERENTIAL CROSSTALK TEST CIRCUIT
Application Information
Unless Otherwise Specified TA = 25oC, V+ = +15V, V - = -15V, VAH = 4V and VAL = 0.8V (Continued)
INSTRUMENTATION
AMPLIFIER
G = 1000
+
-
1kHz, 15V
HI-539
350
350
P-P
INSTRUMENTATION
AMPLIFIER
G = 1000
+
-
AD606 or BB3630, for example
FIGURE 7. CROSSTALK
Coaxial cable is not suitable for lo w le vel signals because the two conductors (center and shield) are unbalanced. Also,
General
The Hl-539 accepts inputs in the range -15V to +15V, with performance guaranteed over the ±10V range. At these higher levelsof analog inputvoltage it is comparable to the Hl­509, and is plug-in compatiblewith that device (as wellas the Hl-509A). Howev er, as mentioned earlier, the Hl-539 was designed to introduce minimum error when switchinglow level inputs.
Special care is required in working with these low level signals. The main concern with signals below 100mV is that noise, offset voltage, and other aberrations can represent a large percentage error. A shielded differential signal path is essential to maintain a noise level below 50µV
RMS
.
Low Level Signal Transmission
The transmission cable carrying the transducer signal is critical in a low level system. It should be as short as practical and rigidly supported. Signal conductors should be tightly twisted for minimum enclosed area to guard against pickup of electromagnetic interference, and the twisted pair should be shielded against capacitively coupled (electrostatic) interference. A braided wire shield ma y be satisfactory, but a lapped foil shield is better since it allows only leakage capacitance to ground per foot. A ke y requirement f or the transmission cable is that it presents a balanced line to sources of noise interference. This means an equal series
1
/10 as much
ground loops are produced if the shield is grounded at both ends by standard BNC connectors. If coax must be used, carry the signal on the center conductors of two equal-length cables whose shields are terminated only at the transducer end. As a general rule, terminate (ground) the shield at one end only , preferably at the end with greatest noise interference. This is usually the transducer end for both high and low le v el signals .
Watch Small∆V Errors
Printed circuit traces and short lengths of wire can add substantial error to a signal even after it has traveled hundreds of feet and arrived on a circuit board. Here, the small voltage drops due to current flow through connections of a fewmilliohms must be considered, especially to meet an accuracy requirement of 12 bits or more.
Table 1 is a useful collection of data for calculating theeffect of these short connections. (Proximity to a ground plane will lower the values of inductance.)
As an example, suppose the Hl-539 is feeding a 12-bit converter system with an allowable error of ± (±1.22mV). lf the interface logic draws 100mA from the 5V supply, this current will produce 1.28mV across 6 inches of #24 wire; more than the error budget. Obviously, this digital current must not be routed through any portion of theanalog ground return network.
1
/2 LSB
impedance in each conductor plus an equally distributed impedance from each conductor to ground. The result should be signals equal in magnitude but opposite in phase at any transverse plane. Noise will be coupled in phase to both conductors, and may be rejected as common-mode voltage b y a differential amplifier connected to the multiplexer output.
8
HI-539
TABLE 1.
EQUIVALENT WIDTH OF
P.C. CONDUCTOR
WIRE GAGE
18 0.47” 0.0064 0.36µH 0.0064 0.0235 20 0.30” 0.0102 0.37µH 0.0102 0.0254 22 0.19” 0.0161 0.37µH 0.0161 0.0288 24 0.12” 0.0257 0.40µH 0.0257 0.0345 26 0.075” 0.041 0.42µH 0.041 0.0488 28 0.047” 0.066 0.45µH 0.066 0.0718 30 0.029” 0.105 0.49µH 0.105 0.110 32 0.018” 0.168 0.53µH 0.168 0.171
(2 oz. Cu)
DC RESISTANCE
PER FOOT
INDUCTANCE PER
FOOT
IMPEDANCE PER FOOT
60Hz 10kHz
Provide Path For I
BIAS
The input bias current for any DC-coupled amplifier must have an external path back to the amplifier’s power supply. No such path exists in Figure 8A, and consequently the amplifier output will remain in saturation.
A single large resistor (1Mto10M) from eithersignal line to powersupply common will provide the required path, but a resistor on each line is necessary to preserve accuracy. A single pair of these bias current resistors on the HI-539 output may be used if their loading effect can be tolerated (each formsa voltage divider with r
). Otherwise,a resistor
ON
pair on each input channel of the multiplexer is required. The use of bias current resistors is acceptable only if one is
confident that the sum of signal plus common-mode voltage will remain within the input range of the multiplexer/amplifier combination.
Another solution is to simply run a third wire from the low side of the signal source, as in Figure 8B. This wire assures a low common-mode voltage as well as providing the path for bias currents. Making the connection near the multiplexer will save wire, but it will also unbalance the line and reduce the amplifier's common-mode rejection.
Differential Offset,∆V
OS
There are two major sources of VOS. That part due to the expression(r
ON∆lD(ON)+lD(ON)∆rON
) becomes significant with increasing temperature, as shown in the Electrical Specifications tables. The other source of offset is the thermocouple effects due to dissimilar materials in the signal path. These include silicon, aluminum, tin, nickel-iron and (often) gold, just to exit the package.
For the thermocouple effects in the package alone, the constraint on V
may be stated in terms of a limit on the
OS
difference in temperature for package pins leading to any channel of the Hl-539. For example, a difference of 0.13
o
C produces a 5µV offset. Obviously, this T effect can dominate the V
parameter at any temperature unless
OS
care is taken in mounting the Hl-539 package. Temperature gradients across the Hl-539 package should be
held to a minimum in critical applications. Locate the Hl-539 far from heat producing components, with any air currents flowing lengthwise across the package.
9
HI-539
“FLOATING”
SOURCE
HI-539
r
ON
r
ON
V+
+
-
V-
FIGURE 8A.
1M TO 10M
POWER SUPPLY COMMON
HI-539
r
ON
r
ON
POWER SUPPLY COMMON
V+
+
-
V-
NOTE: The amplifier in Figure 8A is unusable because its bias currents cannot return to the power supply. Figure 8B shows two alternative paths for these bias currents: either a pair of resistors, or (better) a third wire from the low side of the signal source.
FIGURE 8B.
10
Die Characteristics
HI-539
DIE DIMENSIONS:
92 mils x 100 mils
METALLIZATION:
Type: AlCu Thickness: 16k
Å ±2kÅ
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
NOTE: The substrate appears resistive to the -V conductor at -V
SUPPLY
potential.
Metallization Mask Layout
V- EN A
PASSIVATION:
Type: Nitride Over Silox Nitride Thickness: 3.5k
Å ±1kÅ
Silox Thickness: 12kű2.0kÅ
WORST CASE CURRENT DENSITY:
5
2.54 x 10
A/cm2 at 20mA
TRANSISTOR COUNT:
236
PROCESS:
CMOS-DI
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
SUPPLY
HI-539
A
0
1
GND V+
IN1A
IN2A
OUTB IN4BIN4A OUTAIN3A
IN1B
IN2B
IN3B
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.inter sil.com
11
Loading...