16-Channel, 8-Channel, Differential
8-Channel and Differential 4-Channel,
CMOS Analog MUXs with Active
Overvoltage Protection
The HI-506A, HI-507A, HI-508A and HI-509A are analog
multiplexers with active overvoltage protection. Analog input
levels may greatly exceed either power supply without
damaging the device or disturbing the signal path of other
channels. Active protection circuitry assures that signal
fidelity is maintained even under fault conditions that would
destroy other multiplexers. Analog inputs can withstand
constant 70V
also sustain continuous faults up to 4V greater than either
supply. In addition, signal sources are protected from short
circuiting should multiplexer supply loss occur. Each input
presents 1kΩ of resistance under this condition. These
features make the HI-506A, HI-507A, HI-508A and HI-509A
ideal for use in systems where the analog inputs originate
from external equipment, or separately powered circuitry. All
devices are fabricated with 44V dielectrically isolated CMOS
technology. The HI-506A is a single 16-Channel multiplexer,
the HI-507A is an 8-Channel differential multiplexer, the
HI-508A isasingle8-Channelmultiplexer andtheHI-509Ais
a differential 4-Channel multiplexer. If input overvoltage
protection is not needed the HI-506/507/508/509
multiplexers are recommended. For further information see
Application Notes AN520 and AN521.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Current, I+Notes 2, 8Full-0.52.0-0.52.0mA
Current, I-Notes 2, 8Full-0.021.0-0.021.0mA
Power Dissipation, P
D
Full-7.5--7.5-mW
NOTES:
o
2. 100% tested for Dash 8. Leakage currents not tested at -55
3. V
OUT
= ±10V, I
= +100µA.
OUT
C.
4. 10nA is the practical lower limit for high speed measurement in the production test environment.
5. Analog Overvoltage = ±33V.
6. Digital input leakage is primarily due to the clamp diodes (see Schematic). Typical leakage is less than 1nA at 25oC.
7. VEN = 0.8V, RL = 1K, CL = 15pF, VS = 7V
, f = 100kHz.
RMS
8. VEN, VA = 0V or 4V.
9. To drive from DTL/TTL Circuits, 1kΩ pull-up resistors to +5V supply are recommended.
8
HI-506A, HI-507A, HI-508A, HI-509A
T est Cir cuits and Waveforms T
1.4
1.3
1.2
1.1
1.0
0.9
0.8
ON RESISTANCE (kΩ)
0.7
0.6
-10
-8246810-6-4-20
125oC
25oC
-55oC
ANALOG INPUT (V)
= 25oC, V
A
= ±15V, VAH = 4V, VAL = 0.8V, V
SUPPLY
Unless Otherwise Specified
100µA
V
2
V
IN
FIGURE 1A. TEST CIRCUIT
NORMALIZED RESISTANCE
(REFERRED TO VALUE AT ±15V)
OUTIN
rON =
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
56
= Open,
REF
V
2
100µA
-55oC TO 125oC
V
= +5V
IN
789101112131415
SUPPLY VOLTAGE (±V)
FIGURE 1B. ON RESISTANCE vs ANALOG INPUT VOLTAGEFIGURE 1C. NORMALIZED ON RESISTANCE vsSUPPLY
VOLTAGE
FIGURE 1. ON RESISTANCE
100nA
10nA
OFF OUTPUT
ON LEAKAGE
CURRENT
I
1nA
LEAKAGE CURRENT
100pA
10pA
255075100125
D(ON)
CURRENT
I
D(OFF)
OFF INPUT
LEAKAGE CURRENT
I
S(OFF)
TEMPERATURE (
±10V
o
C)
FIGURE 2A. LEAKAGE CURRENT vs TEMPERATUREFIGURE 2B. I
TEST CIRCUIT (NOTE 10)
D(OFF)
EN
OUT
A
+0.8V
I
D(OFF)
±
10V
9
HI-506A, HI-507A, HI-508A, HI-509A
T est Cir cuits and Waveforms T
= 25oC, V
A
= ±15V, VAH = 4V, VAL = 0.8V, V
SUPPLY
Unless Otherwise Specified (Continued)
OUT
I
A
S(OFF)
±10V
FIGURE 2C. I
±
10V
TEST CIRCUIT (NOTE 10)FIGURE 2D. I
S(OFF)
EN
+0.8V
±
10V
NOTE:
10. Two measurements per channel: ±10V and +10V. (Two measurements per device for I
FIGURE 2. LEAKAGE CURRENTS
7
18
ANALOG INPUT
15
12
CURRENT (I
)
IN
6
5
4
D(OFF)
= Open,
REF
A
0
D(On)
A
1
TEST CIRCUIT (NOTE 10)
±10V and +10V.)
EN
OUT
4V
A
I
D(ON)
±10V
9
6
3
ANALOG INPUT CURRENT (mA)
0
1518212427303336
ANALOG INPUT OVERVOLTAGE (±V)
OUTPUT OFF LEAKAGE
CURRENT ID
(OFF)
FIGURE 3A. ANALOG INPUTOVERVOLTAGE
CHARACTERISTICS
FIGURE 3. ANALOG INPUT OVERVOLTAGE CHARACTERISTICS
±14
±12
±10
±8
±6
±4
SWITCH CURRENT (mA)
±2
-55oC
3
2
1
0
25oC
125oC
OUTPUT OFF LEAKAGE CURRENT (nA)
I
A
IN
±V
IN
I
A
D(OFF)
FIGURE 3B. TEST CIRCUIT
±V
IN
A
0
2468101214
0
VOLTAGE ACROSS SWITCH (±V)
FIGURE 4A. ON CHANNEL CURRENT vs VOLTAGEFIGURE 4B. TEST CIRCUIT
FIGURE 4. ON CHANNEL CURRENT
10
HI-506A, HI-507A, HI-508A, HI-509A
T est Cir cuits and Waveforms T
= 25oC, V
A
= ±15V, VAH = 4V, VAL = 0.8V, V
SUPPLY
REF
= Open,
Unless Otherwise Specified (Continued)
8
6
4
2
SUPPLY CURRENT (mA)
0
1K
V
= ±15V
SUPPLY
V
= ±10V
SUPPLY
10K100K1M10M
TOGGLE FREQUENCY (Hz)
A
3
HI-506A
A
2
50Ω
V
A
+4V
A
A
EN
1
0
GND
+15V/+10V
A
V+
IN 1
†
IN 2
THRU
IN 7/IN 15
IN 8/IN 16
OUT
V-
A
-15V/-10V
+I
SUPPLY
-I
SUPPLY
FIGURE 5A. SUPPLY CURRENT vs TOGGLE FREQUENCY†Similar connection for HI-507A/HI-508A/HI-509A
FIGURE 5B. TEST CIRCUIT
FIGURE 5. DYNAMIC SUPPLY CURRENT
V+
IN 2 THRU
IN 7/IN 15
HI-506A
IN 16
OUT
V-
+15V
IN 1
†
-15V
900
V
REF
V
800
700
600
500
ACCESS TIME (ns)
400
300
REF
3
468101214
= OPEN FOR LOGIC HIGH LEVEL ≤ 6V
= LOGIC HIGH FOR LOGIC HIGH LEVELS > 6V
579151311
LOGIC LEVEL (HIGH) (V)
V
REF
A
3
A
2
50Ω
V
A
+4V
A
A
EN
1
0
GND
FIGURE 6A. ACCESS TIME vs LOGIC LEVEL (HIGH)†Similar connection for HI-507A/HI-580A/HI-509A
FIGURE 6B. TEST CIRCUIT
±
10V
±10V/±5V
10V/±5V
10
MΩ
±10V
10
kΩ
±
14
pF
50
pF
VA INPUT
2V/DIV.
S1 ON
S16 ON
200ns/DIV.
OUTPUT
5V/DIV.
1
/2 V
+10V
AH
VAH = 4.0V
t
A
10%
ADDRESS
DRIVE (V
OUTPUT
-10V
)
A
0V
FIGURE 6C. MEASUREMENT POINTSFIGURE 6D. WAVEFORMS
FIGURE 6. ACCESS TIME
11
HI-506A, HI-507A, HI-508A, HI-509A
T est Cir cuits and Waveforms T
A
3
HI-506A†
A
2
50Ω
V
A
+4.0V
A
A
EN
1
0
GND
†Similar connection for HI-507A/HI-508A/HI-509A
FIGURE 7A. TEST CIRCUITFIGURE 7B. MEASUREMENT POINTS
IN 1
IN 2 THRU
IN 7/IN 15
IN 8/IN 16
OUT
1kΩ
= 25oC, V
A
= ±15V, VAH = 4V, VAL = 0.8V, V
SUPPLY
Unless Otherwise Specified (Continued)
+5V
V
OUT
50pF
0V
= Open,
REF
VAH = 4.0V
50%50%
t
OPEN
ADDRESS
DRIVE (V
)
A
OUTPUT
VA INPUT
2V/DIV.
S1 ONS16 ON
OUTPUT
0.5V/DIV.
100ns/DIV.
FIGURE 7C. WAVEFORMS
FIGURE 7. BREAK-BEFORE-MAKE DELAY
12
HI-506A, HI-507A, HI-508A, HI-509A
T est Cir cuits and Waveforms T
A
3
A
2
A
1
A
0
EN
V
A
50Ω
GND
†Similar connection for HI-507A//HI-508A/HI-509A
FIGURE 8A. TEST CIRCUITFIGURE 8B. MEASUREMENT POINTS
HI-506A
IN 2 THRU
IN 7/IN 15
IN 8 /IN 16
†
IN 1
OUT
1kΩ
= 25oC, V
A
= ±15V, VAH = 4V, VAL = 0.8V, V
SUPPLY
Unless Otherwise Specified (Continued)
+10V
V
OUT
50pF
50%
VAH = 4.0V
90%
t
ON(EN)
REF
= Open,
50%
t
OFF(EN)
ENABLE DRIVE
)
(V
A
0V
OUTPUT
10%
0V
ENABLE DRIVE
2V/DIV.
DISABLED
ENABLED
ON)
(S
1
100ns/DIV.
FIGURE 8C. WAVEFORMS
FIGURE 8. ENABLE DELAYS
OUTPUT
2V/DIV.
13
Die Characteristics
HI-506A, HI-507A, HI-508A, HI-509A
DIE DIMENSIONS:
159 mils x 83.9 mils
METALLIZATION:
Type: CuAl
Thickness: 16k
Å ±2kÅ
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
PASSIVATION:
Silox: 12k
Å ±2kÅ
Nitride: 3.5kÅ ±1kÅ
NOTE: The substrate appears resistiveto the -V
conductor at -V
SUPPLY
potential.
Metallization Mask Layouts
HI-506AHI-507A
EN
(18)(17)(16) (15)(13)(12)
A
0
A
A
2
1
A
(14)
V
REF
3
WORST CASE CURRENT DENSITY:
5
2
1.4 x 10
A/cm
TRANSISTOR COUNT:
485
PROCESS:
CMOS-DI
terminal, therefore it maybe left floating (Insulating Die Mount) or it may be mounted on a
SUPPLY
NC
GND
EN
(18)(17)(16) (15)
A
0
A
A
1
2
V
REF
(14)
(13)(12)
GND
IN 1
(19)
IN 2
(20)
IN 3
(21)
IN 4
(22)
IN 5
(23)
IN 6
(24)
IN 7
(25)
IN 8
(26)
V- (27)+V (1)NC (2)
OUT (28)
IN 9
(11)
IN 10
(10)
IN 11
(9)
IN 12
(8)
IN 13
(7)
IN 14
(6)
IN 15
(5)
IN 16
(4)
IN 1A
(19)
IN 2A
(20)
IN 3A
(21)
IN 4A
(22)
IN 5A
(23)
IN 6A
(24)
IN 7A
(25)
IN 8A
(26)
V- (27)+V (1)OUT B(2)
OUT A (28)
IN 1B
(11)
IN 2B
(10)
IN 3B
(9)
IN 4B
(8)
IN 5B
(7)
IN 6B
(6)
IN 7B
(5)
IN 8B
(4)
14
Die Characteristics
HI-506A, HI-507A, HI-508A, HI-509A
DIE DIMENSIONS:
108 mils x 83 mils
METALLIZATION:
Type: CuAl
Thickness: 16k
Å ±2kÅ
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
PASSIVATION:
Silox: 12k
Å ±2kÅ
Nitride: 3.5kÅ ±1kÅ
NOTE: The substrate appears resistive to the -V
conductor at -V
SUPPLY
potential.
Metallization Mask Layouts
HI-508A HI-509A
IN 6 IN 7 IN 8OUTIN 4 IN 3
(11) (10) (9)(8)(7)(6)
WORST CASE CURRENT DENSITY:
5
2
1.4 x 10
A/cm
TRANSISTOR COUNT:
253
PROCESS:
CMOS-DI
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
SUPPLY
IN 3B IN 4B OUT BOUT A IN 4AIN 3A
(11) (10)(9)(8)(7)(6)
IN 5
(12)
+V
(13)
GND
(14)
A
2
(15)(16) (1)
A
A
1
IN 2
(5)
IN 1
(4)
-V
(3)
EN
0
(2)
IN 2B
(12)
IN 1B
(13)
+V
(14)
GND
(15)(16) (1)
A
1
A
EN
0
(2)
IN 2A
(5)
IN 1A
(4)
-V
(3)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
15
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