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HI-SINCERITY
MICROELECTRONICS CORP.
HI112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI112 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2002.01.11
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)..................................................................................... 25 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 100 V
VCEO Collector to Emitter Voltage.................................................................................... 100 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current .............................................................................................................. 4 A
TO-251
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
ICBO - - 10 uA VCB=80V
ICEO - - 20 uA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=2A, IB=8mA
*VCE(sat)2 - - 3 V IC=4A, IB=40mA
*VBE(on) - - 2.8 V IC=2A, VCE=4V
*VBE(sat) - - 4 V IC=4A, IB=80mA
*hFE1 500 - - IC=0.5A, VCE=3V
*hFE2 1 - 12 K IC=2A, VCE=3V
*hFE3 200 - - IC=4A, VCE=3V
Cob - - 100 pF VCB=10V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HI112 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2002.01.11
Page No. : 2/4
10000
125oC
1000
75oC
100
hFE
25oC
10
hFE @ VCE=4V
1
1 10 100 1000 10000
Collect o r Current IC (mA)
Sat urati on Voltage & Collector Curren t
10000
Current Gain & Collector Current
10000
125oC
1000
75oC
100
hFE
25oC
10
hFE @ VCE=3V
1
1 10 100 1000 10000
Collector Current IC (mA)
Sat uration Voltage & Collector Current
10000
Current Gain & Collector Current
1000
Saturat ion Voltag e ( m V)
100
100 1000 10000
25oC
125oC
Collect o r Current IC (mA)
CE(sat)
V
75oC
@ IC=100I
Sat uration Voltage & Collector Current
10000
25oC
1000
Saturation Voltage (mV)
125oC 75oC
V
BE(sat)
@ IC=250I
1000
Saturat ion Voltag e ( m V)
B
100
100 1000 10000
25oC
125oC
Collect o r Current IC (mA)
75oC
CE(sat)
V
@ IC=250I
B
ON Voltage & Collcetor Current
10000
25oC
1000
125oC
ON Voltage ( m V)
B
75oC
BE(ON)
V
@ VCE=4V
100
100 1000 10000
Collect o r Current IC (mA)
100
100 1000 10000
Collect o r Current IC (mA)
HI112 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2002.01.11
Page No. : 3/4
10000
25oC
1000
125oC
ON Voltage ( m V)
100
100 1000 10000
Collect o r Current IC (mA)
BE(ON)
V
75oC
@ VCE=3V
Capacitance & Rev erse-Biased Voltage
1000
100
Capacitance (pF)
Cob
ON Voltage & Collcetor Current
10
VCC=30V, IC=250IB1= -250I
1
Switching Times (us)..
0.1
110
B2
Tstg
Tf
Ton
Collect o r Current ( A)
Safe Oper ating Area
Switching Time & Collector Current
100000
10000
(mA)
C
1000
100
Collect or Current-I
PT=1ms
PT=100ms
PT=1s
10
10
0.1 1 10 100
Reverse-Biased Vol tage (V)
1
1 10 100
Forwar d Voltage-VCE (V)
HI112 HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-251 Dimension
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2002.01.11
Page No. : 4/4
A
C
B
HI
D
Date Code
112
Control Code
F G
Marking:
Style: Pin 1.Base 2.Collector 3.Emitter
3
I
E
K
2
H
1
J
3-Lead TO-251 Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code: I
DIM
*: Typical
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20
Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Tai pei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HI112 HSMC Product Specification
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