Datasheet HGTP7N60A4D, HGTG7N60A4D, HGT1S7N60A4DS Datasheet (Intersil Corporation)

TM

HGTG7N60A4D, HGTP7N60A4D,

HGT1S7N60A4DS

Data Sheet March 2000

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49333.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG7N60A4D TO-247 7N60A4D
HGTP7N60A4D TO-220AB 7N60A4D
HGT1S7N60A4DS TO-263AB 7N60A4D

NOTE: When ordering, use the entirepart number.Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.

File Number 4827.1

Features

• >100kHz Operation At 390V, 7A

• 200kHz Operation At 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR
(FLANGE)

JEDEC TO-220AB

E

C

G

= 125oC

J

Symbol

C

G

E

G

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

2-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc. | 1-888-INTERSIL or 321-724-7143

JEDEC TO-263AB

E

COLLECTOR
(FLANGE)

COLLECTOR
(FLANGE)

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

34 A
14 A
56 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

125 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC--2mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V,

= 7A,

VGE = 15V

TJ = 25oC - 1.9 2.7 V

TJ = 125oC - 1.6 2.2 V
IC = 250µA, VCE = 600V 4.5 5.9 7 V
VGE = ±20V - - ±250 nA

35 - - A

L = 100µH, VCE = 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-On Energy E
Turn-Off Energy (Note 2) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

IC = 7A, VCE = 300V - 9 - V
IC = 7A,

VCE = 300V

IGBT and Diode at TJ = 25oC,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)

VGE = 15V - 37 45 nC
VGE = 20V - 48 60 nC

-11- ns

-11- ns

- 100 - ns

-45- ns

-55- µJ

- 120 150 µJ

-6075µJ

IGBT and Diode at TJ = 125oC,
ICE = 7A,
VCE = 390V, VGE = 15V,
RG= 25Ω,
L = 1mH,
Test Circuit (Figure 24)

-10- ns

-7-ns

- 130 150 ns

-7585ns

-50- µJ

- 200 215 µJ

- 125 170 µJ

2-2

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V
Diode Reverse Recovery Time t

EC

rr

IEC = 7A - 2.4 - V
IEC = 7A, dIEC/dt = 200A/µs - 34 - ns
IEC = 1A, dIEC/dt = 200A/µs - 22 - ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 1.0
Diode - - 2.2

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneouspower loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

35

VGE= 15V

30

25

20

15

40

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 100µH

30

20

o
o

C/W
C/W

ON2

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

200

100

f

= 0.05 / (t

MAX1

= (PD- PC) / (E

f

MAX2

P

= CONDUCTION DISSIPATION

C

, OPERATING FREQUENCY (kHz)

MAX

f

30

(DUTY FACTOR = 50%)

R

= 1.0oC/W, SEE NOTES

ØJC

TJ= 125oC, RG = 25Ω, L = 1mH, VCE= 390V

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

)

TCV

75

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

GE

o

15V

C

20510

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

4

t

10

VCE = 390V, RG = 25Ω, TJ= 125oC

I

SC

t

SC

11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

13 14

14016

120

100

80

60

40

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

20

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

2-3

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

30

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0 1.0

0.5 2.5

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

GE

TJ = 150oC

= 12V

TJ = 125oC

TJ = 25oC

1.5 2.0 3.0

30

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0 1.0 1.5 2.0 3.00.5 2.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 125oC

TJ = 150oC TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

500

RG = 25Ω, L = 1mH, VCE = 390V

400

TJ = 125oC, VGE = 12V, VGE = 15V

300

200

, TURN-ON ENERGY LOSS (µJ)

100

ON2

E

0

0

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 12V, VGE = 15V

4268101214

350

RG = 25Ω, L = 1mH, VCE = 390V

300

250

200

TJ = 125oC, VGE = 12V OR 15V

150

100

, TURN-OFF ENERGY LOSS (µJ)

50

OFF

E

0

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, VGE = 12V OR 15V

42 6 8 1012140

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

16

RG = 25Ω, L = 1mH, VCE = 390V

TJ = 25oC, VGE = 12V

14

12

10

, TURN-ON DELAY TIME (ns)

d(ON)I

t

8

42681012140

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 125oC, VGE = 12V

TJ = 25oC, VGE = 15V

TJ = 125oC, VGE = 15V

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

2-4

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

40

RG = 25Ω, L = 1mH, VCE = 390V

TJ = 25oC, VGE= 12V, VGE= 15V

TJ = 125oC, VGE= 12V, VGE= 15V

42681012140

ICE, COLLECTOR TO EMITTER CURRENT (A)

, RISE TIME (ns)

rI

t

30

20

10

0

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

180

160

140

120

100

, TURN-OFF DELAY TIME (ns)

d(OFF)I

t

80

60

42681012140

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

RG = 25Ω, L = 1mH, VCE = 390V

VGE = 15V, TJ = 125oC

VGE = 12V, TJ = 125oC

VGE = 15V, TJ = 25oC

VGE = 12V, TJ = 25oC

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

120

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

100

80

60

40

= 10V

CE

TJ = 25oC

TJ = 125oC TJ = -55oC

90

RG = 25Ω, L = 1mH, VCE = 390V

80

, FALL TIME (ns)

fI

t

70

60

50

40

30

20

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

42681012140

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT

15

I

= 1mA, RL = 43Ω, TJ = 25oC

G(REF)

12

9

6

VCE = 600V

VCE = 400V

VCE = 200V

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

8 9 11 12 15

7

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

800

RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V
E

= E

TOTAL

600

400

200

, TOTAL SWITCHING ENERGY LOSS (µJ)

0

TOTAL

E

+ E

ON2

OFF

ICE = 14A

ICE = 7A

ICE = 3.5A

50 75 100

, CASE TEMPERATURE (oC)

T

C

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE

14

1310

12525 150

3

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

, TOTAL SWITCHING ENERGY LOSS (mJ)

TOTAL

E

5 101520 3025 35 40

0

QG, GATE CHARGE (nC)

10

TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
E

= E

TOTAL

1

0.1
10 1000

+ E

ON2

OFF

ICE = 14A

ICE = 7A

ICE = 3.5A

R

, GATE RESISTANCE (Ω)

G

100

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

2-5

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

1.4
FREQUENCY = 1MHz

1.2

1.0

0.8

0.6

0.4

C, CAPACITANCE (nF)

0.2

0

0 20406080100

C

IES

C

OES

C

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER

2.8

2.6

2.4

2.2

2.0

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

1.8

V

9

FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE

VOLTAGE

35

DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs

30

25

20

15

10

, FORWARD CURRENT (A)

EC

I

5

0

04

123 5

VEC, FORWARD VOLTAGE (V)

125

o

C

25oC

100

dIEC/dt = 200A/µs

80

60

40

, RECOVERY TIMES (ns)

rr

t

20

0

0

DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs

ICE = 14A

ICE = 7A

ICE = 3.5A

10 12

11 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

vs GATE TO EMITTER VOLTAGE

125oC t

rr

125oC t

b

125oC t

a

25oC t

rr

25oC t

a

25oC t

b

2 8 12 14

IEC, FORWARD CURRENT (A)

64

10

FIGURE 19. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

60

50

40

30

, RECOVERY TIMES (ns)

rr

20

t

10

100 500

125oC t

b

125oC t

a

25oC t

a

25oC t

b

200 300 400 600 700

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

IEC = 7A, VCE = 390V

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF

CURRENT

2-6

FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT

500

VCE = 390V

400

300

200

100

, REVERSE RECOVERY CHARGE (nc)

rr

Q

0

400100 200 300

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

125oC, IEC = 7A

125oC, IEC = 3.5A

25oC, IEC = 7A

25oC, IEC = 3.5A

500 600 700

FIGURE 22. STORED CHARGE vs RATEOF CHANGE OF

CURRENT

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

Z

-2

10

10

-5

SINGLE PULSE

10

-4

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

DUTY FACTOR, D = t1 / t

PEAK TJ = (PDX Z

-1

10

t

1

P

D

t

2

2

X R

θJC

) + T

C

1

10

θJC

0

10

HGTG7N60A4D

L = 1mH

RG = 25Ω

DUT

+

= 390V

V

DD

-

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT

90%

V

GE

E

V

CE

90%

I

CE

t

d(OFF)I

10%

OFF

t

fI

10%

E

ON2

t

rI

t

d(ON)I

FIGURE 25. SWITCHING TEST WAVEFORMS

2-7

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate­insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device.With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devicesshould never be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating - Neverexceedthe gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open­circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. GateProtection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an externalZener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowabledissipation (P

= (PD - PC)/(E

MAX2

)is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

=(VCExICE)/2.

C

E

and E

ON2

shown in Figure 25. E

. A 50% duty factor was used (Figure 3) and

D

are defined in the switching waveforms

OFF

) are approximated by

C

is the integral of the

ON2

instantaneous power loss (I
E

is the integral of the instantaneous power loss

OFF

(I

CExVCE

calculation for E
(I

CE

) during turn-off. All tail losses are included in the

; i.e., the collector current equals zero

OFF

= 0).

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are defined in Figure 25.

. t

JM

d(OFF)I

+ E

OFF

x VCE) during turn-on and

CE

ON2

). The

θJC

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

2-8

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

ASIA

Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]

ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.