Page 1
SEMICONDUCTOR
January 1997
HGTP3N60C3D , HGT1S3N60C3D ,
HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T
= 150oC
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
o
25
C and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP3N60C3D TO-220AB G3N60C3D
HGT1S3N60C3D TO-262AA G3N60C3D
HGT1S3N60C3DS TO-263AB G3N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
Formerly Developmental Type TA49119.
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
JEDEC TO-262AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
COLLECTOR
GATE
EMITTER
COLLECTOR
GATE
A
A
M
A
COLLECTOR
(FLANGE)
C
E
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At TC = 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = 150oC, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
= 360V, TJ = 125oC, RGE = 82Ω.
CE(PK)
© Harris Corporation 1997
= 25oC, Unless Otherwise Specified
C
3-9
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS UNITS
CES
C25
C110
CM
GES
GEM
D
STG
L
SC
600 V
6A
3A
24 A
±20 V
±30 V
33 W
-40 to 150
260
8 µs
File Number 4140.1
o
C
o
C
Page 2
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
VCE = BV
Collector-Emitter Saturation Voltage V
CE(SAT)
IC = I
C110
VGE = 15V
Gate-Emitter Threshold Voltage V
GE(TH)
IC = 250µA,
VCE = V
Gate-Emitter Leakage Current I
GES
VGE = ±25V - - ±250 nA
Switching SOA SSOA TJ = 150oC
RG = 82Ω
VGE = 15V
L = 1mH
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
IC = I
C110
IC = IC110,
VCE = 0.5 BVCES
Current Turn-On Delay Time t
D(ON)I
TJ = 150oC
ICE = I
Current Rise Time t
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t
RI
FI
ON
OFF
EC
RR
V
CE(PK)
VGE = 15V
RG= 82Ω
L = 1mH
IEC = 3A - 2.0 2.5 V
IEC = 3A, dIEC/dt = 200A/µs - 22 28 ns
IEC = 1A, dIEC/dt = 200A/µs - 17 22 ns
Thermal Resistance R
θJC
IGBT - - 3.75
Diode - - 3.0
CES
CES
,
GE
, VCE = 0.5 BV
C110
= 0.8 BV
TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
TC = 25oC 3.0 5.5 6.0 V
V
V
= 480V 18 - - A
CE(PK)
= 600V 2 - - A
CE(PK)
CES
- 8.3 - V
VGE = 15V - 10.8 13.5 nC
VGE = 20V - 13.8 17.3 nC
-5-ns
CES
-10- ns
- 325 400 ns
- 130 275 ns
-85-µJ
- 245 - µJ
o
o
C/W
C/W
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of P ower De vice Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
3-10
Page 3
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
DUTY CYCLE <0.5%, V
18
PULSE DURATION = 250µs
16
14
12
10
TC = 150oC
8
=25oC
T
C
6
TC = -40oC
4
, COLLECTOR-EMITTER CURRENT (A)
2
CE
I
0
4
6 8 10 12
VGE, GATE-TO-EMITTER VOLTAGE (V)
CE
= 10V
14
20
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
18
TC = 25oC
16
14
12
10
8
6
4
, COLLECTOR-EMITTER CURRENT (A)
2
CE
I
0
VGE = 15V
0246810
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
20
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
18
16
14
12
10
8
6
4
2
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012345
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
= 10V
GE
TC = -40oC
TC = 150oC
TC =25oC
20
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
18
16
14
12
10
T
8
6
4
, COLLECTOR-EMITTER CURRENT (A)
2
CE
I
0
012345
= -40
C
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
o
T
= 25
C
C
o
C
12V
T
= 150
C
9.0V
8.5V
8.0V
7.5V
7.0V
o
10V
C
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
7
V
= 15V
GE
6
5
4
3
2
, DC COLLECTOR CURRENT (A)
1
CE
I
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERA TURE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
14
VCE = 360V, RGE = 82Ω, TJ = 125oC
12
10
t
8
6
4
2
, SHORT CIRCUIT WITHSTAND TIME (µS)
SC
0
t
10 11 12
SC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
I
SC
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-11
70
60
50
40
30
20
10
, PEAK SHORT CIRCUIT CURRENT(A)
SC
I
14 1513
0
Page 4
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
T
= 150oC, RG = 82Ω, L = 1mH, V
J
10
, TURN-ON DELAY TIME (ns)
D(ON)I
t
3
1234
, COLLECTOR-EMITTER CURRENT (A)
I
CE
(Continued)
= 480V
CE(PK)
VGE = 10V
VGE = 15V
56
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
80
T
= 150oC, RG = 82Ω, L = 1mH, V
J
CE(PK)
= 480V
VGE = 10V
78
500
T
= 150oC, RG = 82Ω, L = 1mH, V
J
400
300
, TURN-OFF DELAY TIME (ns)
D(OFF)I
t
200
12345678
ICE, COLLECTOR-EMITTER CURRENT (A)
CE(PK)
= 480V
VGE = 15V
VGE = 10V
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
300
TJ = 150oC, RG = 82Ω, L = 1mH, V
CE(PK)
= 480V
VGE = 15V
10
, TURN-ON RISE TIME (ns)
RI
t
5
12345678
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
0.5
TJ = 150oC, RG = 82Ω, L = 1mH, V
0.4
0.3
0.2
0.1
, TURN-ON ENERGY LOSS (mJ)
ON
E
0
12345678
ICE, COLLECTOR-EMITTER CURRENT (A)
CE(PK)
= 480V
VGE = 10V
VGE = 15V
200
VGE = 10V or 15V
, FALL TIME (ns)
FI
t
100
12345678
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
0.8
TJ = 150oC, RG = 82Ω, L = 1mH, V
0.7
0.6
0.5
0.4
0.3
0.2
, TURN-OFF ENERGY LOSS (mJ)
0.1
OFF
E
0
12345678
ICE, COLLECTOR-EMITTER CURRENT (A)
VGE = 10V or 15V
CE(PK)
= 480V
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
3-12
Page 5
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
200
(Continued)
TJ = 150oC, TC = 75oC
= 82Ω, L = 1mH
R
G
100
= 0.05/(t
f
MAX1
f
= (PD - PC)/(EON + E
MAX2
= ALLOWABLE DISSIPATION
P
D
= CONDUCTION DISSIPATION
P
, OPERATING FREQUENCY (kHz)
MAX
f
C
(DUTY FACTOR = 50%)
R
= 3.75oC/W
JC
θ
10
1246
D(OFF)I
+ t
D(ON)I
OFF
)
VGE = 15V
)
VGE = 10V
53
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
500
400
C
FREQUENCY = 1MHz
IES
20
TJ = 150oC, VGE= 15V, RG= 82Ω, L = 1mH
18
16
14
12
10
8
6
4
, COLLECTOR-EMITTER CURRENT (A)
2
CE
I
0
0 100 200 300 400 500 600
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE(PK)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
600
480
15
12
300
200
C, CAPACITANCE (pF)
100
0
0 5 10 15 20 25
C
C
OES
RES
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
-2
10
10
0.01
SINGLE PULSE
-5
-4
10
-3
10
t1, RECTANGULAR PULSE DURATION (s)
, NORMALIZED THERMAL RESPONSE
JC
θ
Z
, COLLECTOR - EMITTER VOLTAGE (V)
CE
V
-2
10
360
240
120
0
2 4 6 8 10 12 14
0
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z
-1
10
= 600V
V
CE
VCE = 400V
VCE = 200V
IG REF = 1.060mA
RL = 200Ω
T
= 25oC
C
t
1
P
D
t
2
2
X R
JC
θ
0
10
) + T
JC
θ
9
6
, GATE-EMITTER VOLTAGE (V)
3
GE
V
0
C
1
10
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-13
Page 6
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
15
12
9
100oC
6
, FORWARD CURRENT (A)
EC
3
I
0
0 2.0
0.5 1.0 1.5 2.5 3.0
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
150oC
VEC, FORWARD VOLTAGE (V)
(Continued)
25oC
3.5
Test Circuit and Waveform
30
TC = 25oC, dIEC/dt = 200A/µs
25
20
15
10
, RECOVERY TIMES (ns)
R
t
5
0
0.5
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD
CURRENT
14
IEC, FORWARD CURRENT (A)
t
rr
t
A
t
B
L = 1mH
RHRD460
RG = 82Ω
+
V
= 480V
DD
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
V
GE
V
CE
90%
I
CE
t
D(OFF)I
10%
t
90%
E
FI
OFF
E
ON
Operating Frequency Information
Operating frequency information for a typical de vice (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
) plots are possible using the information shown
CE
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
f
whichever is smaller at each point. The information is
MAX2
MAX1
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
MAX1
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Deadtime (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
are defined in Figure 21.
D(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
t
D(OFF)I
is important when controlling output ripple under a
JMAX
lightly loaded condition.
f
is defined by f
MAX2
allowable dissipation (P
T
)/R
C
. The sum of device switching and conduction
θJC
losses must not exceed P
= (PD - PC)/(E
MAX2
) is defined by PD = (T
D
. A 50% duty factor was used
D
(Figure 13) and the conduction losses (P
mated by P
or
and E
E
ON
shown in Figure 21. E
power loss (I
=(VCE x ICE)/2.
C
are defined in the switching waveforms
OFF
x VCE) during turn-on and E
CE
is the integral of the instantaneous
ON
gral of the instantaneous power loss during turn-off. All tail
losses are included in the calculation for E
lector current equals zero (I
CE
= 0).
.
10%
t
RI
t
D(ON)I
+ EON). The
OFF
) are approxi-
C
OFF
OFF
JMAX
is the inte-
; i.e. the col-
-
3-14
Page 7
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating- Never exceed the gate-voltage rat-
ing of V
. Exceeding the rated VGE can result in
GEM
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these de vices are essen-
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems cer tification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS
NORTH AMERICA
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
SEMICONDUCTOR
3-15
ASIA
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Cencon 1, #09-01
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TEL: (65) 748-4200
FAX: (65) 748-0400
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