Datasheet HGTP3N60B3D, HGT1S3N60B3DS Datasheet (Intersil Corporation)

HGTP3N60B3D, HGT1S3N60B3DS

Data Sheet January 2000

7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGTP3N60B3Dand HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the highinput impedanceof a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on­state voltage drop varies only moderately between25

o

150

C. The diode used in anti-parallel with the IGBT is the

o

C and

RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49193.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP3N60B3D TO-220AB G3N60B3D
HGT1S3N60B3DS TO-263AB G3N60B3D

NOTE: Whenordering, usethe entirepartnumber.Addthe suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.

File Number 4414.1

Features

• 7A, 600V TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

• TB334 “Guidelines for Soldering Surface Mount

- Components to PC Boards

Packaging

JEDEC TO-220AB

E

COLLECTOR

(FLANGE)

C

= 125oC

J

G

Symbol

C

G

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

TO-263, TO-263AB

COLLECTOR
(FLANGE)

E

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTP3N60B3D, HGT1S3N60B3DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP3N60B3D,

HGT1S3N60B3DS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

EC(AVG)

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

7.0 A

3.5 A

4.0
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

33.3 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

SC
SC

300
260

5 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 1) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

= I

C110

CES

,

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - - 250 µA

= 150oC - - 2.0 mA

T

C

TC = 25oC - 1.8 2.1 V

= 150oC - 2.1 2.5 V

T

C

GE

4.5 5.4 6.0 V

VGE = ±20V - - ±250 nA

= 150oC, RG = 82Ω, VGE = 15V

J

18 - - A

L = 500µH, VCE= 600V
IC = I
IC = I

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC
ICE = I
VCE = 0.8 BV
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 19)

, VCE = 0.5 BV

C110

,

C110

C110

CES

- 7.9 - V

VGE = 15V - 18 22 nC

CES

V

= 20V - 21 25 nC

GE

-18- ns

CES

-16- ns

- 105 - ns

-70- ns

-6675µJ

- 88 160 µJ

2

HGTP3N60B3D, HGT1S3N60B3DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 1) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON

OFF

EC

rr

θJC

IGBT and Diode at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 19)

-16- ns

-18- ns

- 220 295 ns

- 115 175 ns

- 130 140 µJ

- 210 325 µJ
IEC = 3A - 2.0 2.5 V
IEC = 1A, dIEC/dt = 200A/µs--22ns
I

= 3A, dIEC/dt = 200A/µs--28ns

EC

IGBT - - 3.75
Diode 3.0

NOTE:

3. Turn-OffEnergy Loss (E

) is definedas theintegral of theinstantaneous powerloss starting atthe trailing edgeof theinput pulse andending

OFF

at the pointwhere the collector current equalszero (ICE= 0A). Alldevices were tested per JEDECStandard No. 24-1 Methodfor Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

20

7

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

V

GE

= 15V

TJ= 150oC, RG = 82Ω, VGE= 15V L = 500µH

18
16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

200

100 500 600

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

300 400

700

FIGURE 1. DC COLLECT OR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3

HGTP3N60B3D, HGT1S3N60B3DS

Typical Performance Curves Unless Otherwise Specified (Continued)

200

100

10

f

MAX1

f

MAX2

= CONDUCTION DISSIPATION

P

, OPERATING FREQUENCY (kHz)

C

MAX

f

R

ØJC

1

1

TJ= 150oC, RG = 82Ω, L = 1mH, VCE= 480V

T

C

o

75

C

o

75

C

o

C

110
110oC

= 0.05 / (t
= (PD- PC) / (EON + E

(DUTY FACTOR = 50%)

= 3.75oC/W, SEE NOTES

246

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

+ t

d(OFF)I

357

d(ON)I

OFF

)
)

V

GE

15V
10V

15V

10V

FIGURE 3. OPERATINGFREQUENCY vsCOLLECTOR TO

EMITTER CURRENT

14

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

GE

= 10V

T

= 25oC

C

678910

TC = -55oC

TC = 150oC

SC

45

40

35

30

25

20

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

15

16

VCE = 360V, RG = 82Ω, TJ= 125oC

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

t

8

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

t

SC

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

30

DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

01234

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TC = 25oC

5678910

TC = -55oC

TC = 150oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

0.7
RG = 82Ω, L = 1mH, VCE = 480V

0.6

0.5

0.4

0.3

0.2

, TURN-ON ENERGY LOSS (mJ)

0.1

ON

E

0

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, TJ = 150oC, VGE = 10V

VGE = 15V, TJ = 150oC, TJ = 25oC

7641

FIGURE 7. TURN-ON ENERGYLOSS vs COLLECTORTO

EMITTER CURRENT

8523

0.6
RG = 82Ω, L = 1mH, VCE = 480V

0.5

0.4

0.3

0.2

, TURN-OFF ENERGY LOSS (mJ)

0.1

OFF

E

0

TJ = 150oC; VGE = 10V OR 15V

TJ = 25oC; VGE = 10V OR 15V

3571

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF ENERGYLOSS vs COLLECTORTO

EMITTER CURRENT

4

8642

HGTP3N60B3D, HGT1S3N60B3DS

Typical Performance Curves Unless Otherwise Specified (Continued)

45

RG = 82Ω, L = 1mH, VCE = 480V

40

TJ = 25oC, TJ = 150oC, VGE = 10V

35

30

25

20

, TURN-ON DELAY TIME (ns)

dI

15

t

10

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 150oC, VGE = 15V

42581

763

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

250

225

200

175

150

125

, TURN-OFF DELAY TIME (ns)

100

d(OFF)I

t

75

T

= 25oC, VGE = 15V

J

T

= 25oC, VGE = 10V

J

2

ICE, COLLECTOR TO EMITTER CURRENT (A)

RG = 82Ω, L = 1mH, VCE = 480V

TJ = 150oC, VGE = 15V

T

= 150oC, VGE = 10V

J

4681

753

80

RG = 82Ω, L = 1mH, VCE = 480V

70

60

TJ = 25oC AND TJ = 150oC, VGE= 10V

50

40

, RISE TIME (ns)

rI

t

30

20

10

2

3681

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 150oC, VGE= 15V

FIGURE 10. TURN-ON RISETIME vs COLLECTORTO

EMITTER CURRENT

140

RG = 82Ω, L = 1mH, VCE = 480V

120

TJ = 150oC, VGE = 10V OR 15V

100

, FALL TIME (ns)

fI

t

80

60

24681

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 10V OR 15V

754

753

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

30

PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

5789106

V

, GATE TO EMITTER VOLTAGE (V)

GE

TC = -55oC

11 12 13 14 15

= 25oC

T

C

TC = 150oC

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

5

FIGURE 12. FALLTIME vs COLLECTORTO EMITTER

CURRENT

15

I

= 1mA,

G(REF)

RL = 171Ω, TC= 25oC

12

9

6

3

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

01051525

VCE = 200V

VCE = 400V VCE = 600V

Qg, GATE CHARGE (nC)

20

HGTP3N60B3D, HGT1S3N60B3DS

Typical Performance Curves Unless Otherwise Specified (Continued)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

Z

-2

10

10

SINGLE PULSE

-5

-4

10

500

400

C

IES

300

200

C

C, CAPACITANCE (pF)

100

0

0 5 10 15 20 25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

-3

10

OES

C

RES

t1, RECTANGULAR PULSE DURATION (s)

FREQUENCY = 1MHz

-2

10

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-1

10

θJC

10

P

0

D

X R

t

1

t

2

2

) + T

θJC

C

1

10

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

15

12

o

150

9

6

, FORWARD CURRENT (A)

3

EC

I

0

25oC

VEC, FORWARD VOLTAGE (V)

C

o

-55

C

2.0 2.51.51.00.50

FIGURE 17. DIODE FORWARD CURRENT vsFORWARD

VOLTAGE DROP

6

3.0

30

TC = 25oC, dIEC/dt = 200A/µs

25

20

15

10

t, RECOVERY TIMES (ns)

5

0

0.5

14

IEC, FORWARD CURRENT (A)

t

rr

t

a

t

b

23

FIGURE 18. RECOVERY TIME vs FORWARD CURRENT

Test Circuit and Waveforms

HGTP3N60B3D, HGT1S3N60B3DS

HGTP3N60B3D

V

GE

V

L = 1mH

RG = 82Ω

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS

DUT

+

V

= 480V

DD

-

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these de vices ,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
howev er, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the follo wing basic precautions are taken:

1. Prior to assemblyinto a circuit,all leads shouldbe kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26™” or equivalent.

2. When devicesare removedby hand from their carriers,
the handbeing usedshould begrounded byany suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices shouldnever beinserted into orremoved from
circuits with power on.

5. Gate Voltage Rating -Never exceed the gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination -The gates ofthese devicesare
essentially capacitors. Circuits that leave the gate open­circuited orfloating should be avoided. These conditions
can result in turn-on of the devicedue to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. Gate Protection- These devicesdo nothavean internal
monolithic Zener diode from gate to emitter. If gate
protection is requiredan external Zeneris recommended.

. Exceeding the rated VGE can result in

GEM

CE

90%

I

CE

t

d(OFF)I

10%

t

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shownfor a typical unitin Figures5, 6,7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

Deadtime (the denominator) hasbeen arbitrarilyheld to10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

C=VCE

EON and E

x ICE)/2.

OFF

shown in Figure 20. E
power loss (I
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E

; i.e., the collector current equals zero (ICE = 0).

OFF

or f

MAX1

MAX1

and t

d(OFF)I

MAX2

D

. A 50% duty factor was used (Figure 3) and

D

are defined in the switching waveforms

ON

x VCE) during turn-on and E

CE

90%

E

E

OFF

fI

; whichever is smaller at each

MAX2

= 0.05/(t

d(ON)I

ON

) plots are possible using

CE

d(OFF)I

are defined in Figure 20.

= (PD - PC)/(E

) is defined by PD = (TJM - TC)/R

) are approximated by

C

is the integral of the instantaneous

10%

t

rI

t

d(ON)I

+ t

d(ON)I

+ EON). The

OFF

OFF

x VCE) during

CE

. t

JM

is the

).

d(OFF)I

θJC

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to makechanges in circuit design and/or specificationsat any time with­out notice.Accordingly , the reader is cautioned to verify that data sheets are current before placing orders. Information furnished b y Intersil is believed to be accurate and
reliable. However, no responsibilityis assumed by Intersil or its subsidiaries for its use; nor for anyinfringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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7

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