Datasheet HGTP3N60A4D Datasheet (Fairchild Semiconductor)

COLLECTOR (FLANGE)

E

G

C

G

E

COLLECTOR

(FLANGE)

HGT1S3N60A4DS, HGTP3N60A4D

Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between

o

25

C and 150

o

C. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.

This device has been optimized for high frequency switch mode power supplies

.

Formerly Developmental Type TA49329.

Ordering Information

PART NUMBER PACKAGE BRAND

HGT1S3N60A4DS TO-263AB 3N60A4D

HGTP3N60A4D TO-220AB 3N60A4D

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.

Features

• >100kHz Operation At 390V, 3A

• 200kHz Operation At 390V, 2.5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model www.Fairchildsemi.com

Packaging

JEDEC TO-263AB

JEDEC TO-220AB

= 125

J

o

C

Symbol

C

G

E

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

±

µ

±

HGT1S3N60A4DS, HGTP3N60A4D

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

HGT1S3N60A4DS

HGTP3N60A4D UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T

Power Dissipation Total at T

Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

o

= 110

C

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

o

= 150

J

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

C

> 25

C

C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 15A at 600V

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.58 W/

C25

C110

CM

GES

GEM

D

, T

J

STG

L

PKG

17 A

8A

40 A

20 V

30 V

70 W

o

C

-55 to 150

300 260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

o

T

= 25

Electrical Speciﬁcations

C, Unless Otherwise Speciﬁed

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV

Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CES

CE(SAT)

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V

On-State Gate Charge Q

Current Turn-On Delay Time t

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-On Energy (Note 2) E

Turn-Off Energy (Note 3) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI

ON1

ON2

OFF

I

= 250 µ A, V

C

V

= 600V T

CE

I

= 3A,

C

V

= 15V

GE

I

= 250 µ A, V

C

V

= ± 20V - -

GE

= 150

J

L = 200 µ H, V

I

= 3A, V

C

I

= 3A,

C

V

= 300V

CE

IGBT and Diode at T I

= 3A,

CE

V

= 390V,

CE

V

= 15V,

GE

R

= 50 Ω,

G

L = 1mH, Test Circuit (Figure 24)

= 0V 600 - - V

GE

o

= 25

C - - 250

J

T

= 600V 4.5 6.1 7.0 V

CE

o

C, R

= 50 Ω , V

G

= 600V

CE

= 300V - 8.8 - V

CE

V

= 25

J

o

= 125

J

GE

C - - 3.0 mA

o

= 25

C - 2.0 2.7 V

o

= 125

C - 1.6 2.2 V

GE

= 15V,

15 - - A

= 15V - 21 25 nC

= 20V - 26 32 nC

o

C,

-73 - ns

-47 - ns

-37 - µ J

-5570 µ J

-2535 µ J

A

250 nA

-6 - ns

-11 - ns

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

12

0

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

4

300 400200100 500 600

0

16

20

8

TJ = 150oC, RG = 50Ω, V

GE

= 15V, L = 200µH

HGT1S3N60A4DS, HGTP3N60A4D

µ

θ

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t

Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t

Turn-On Energy (Note 2) E

Turn-Off Energy (Note 3) E

Diode Forward Voltage V

Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON1

ON2

OFF

EC

rr

JC

IGBT and Diode at T I

= 3A,

CE

V

= 390V, V

CE

R

= 50 Ω,

G

L = 1mH,

GE

= 15V,

Test Circuit (Figure 24)

I

= 3A - 2.25 - V

EC

I

EC

I

EC

= 3A, dI

= 1A, dI

/dt = 200A/ µ s - 29 - ns

EC

/dt = 200A/ µ s - 19 - ns

EC

IGBT - - 1.8

= 125

J

o

C,

- 5.5 8 ns

-1215ns

- 110 165 ns

- 70 100 ns

-37 - µ J

- 90 100

-5080 µ J

Diode - - 3.5

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T Figure 24.

3. Turn-Off Energy Loss (E ending at the point where the collector current equals zero (I

) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for

CE

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is speciﬁed in

J

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

o

J

C/W

ON2

Typical Performance Curves Unless Otherwise Speciﬁed

, DC COLLECTOR CURRENT (A)

CE

I

FIGURE 1. DC COLLECTOR CURRENT vs CASE

20

16

12

8

4

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

= 15V

GE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

, PEAK SHORT CIRCUIT CURRENT (A)

t

SC

, SHORT CIRCUIT WITHSTAND TIME (µs)

10 11 12 15

4

6

14

0

24

40

5618

13 14

8

10

12

16

8

16

32

48

20 64

VCE = 390V, RG = 50Ω, TJ = 125oC

t

SC

I

SC

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0

4

8

16

12

20

02341

DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs

TJ = 25oC

TJ = 150oC

TJ = 125oC

120

E

OFF

, TURN-OFF ENERGY LOSS (µJ)

0

20

80

40

100

140

60

324561

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 12V OR 15V

TJ = 125oC, VGE = 12V OR 15V

RG = 50Ω, L = 1mH, VCE = 390V

HGT1S3N60A4DS, HGTP3N60A4D

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

600

300

200

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

PC = CONDUCTION DISSIPATION

100

, OPERATING FREQUENCY (kHz)

MAX

f

50

(DUTY FACTOR = 50%)

= 1.8oC/W, SEE NOTES

R

ØJC

TJ = 125oC, RG = 50Ω, L = 1mH, V

1

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

= 390V

CE

TCV

o

C

75

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

20

DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs

16

12

TJ = 125oC

TJ = 150oC

GE

15V

623

54

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

023

I

1

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

240

RG = 50Ω, L = 1mH, VCE = 390V

200

160

120

80

, TURN-ON ENERGY LOSS (µJ)

40

ON2

E

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

TJ = 125oC, VGE = 12V, VGE = 15V

0

1

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

EMITTER CURRENT

TJ = 25oC, VGE = 12V, VGE = 15V

32456

45

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

ICE, COLLECTOR TO EMITTER CURRENT (A)

t

rI

, RISE TIME (ns)

4

8

20

16

12

24

32

28

32 4561

TJ = 25oC OR TJ = 125oC, V

GE

= 15V

RG = 50Ω, L = 1mH, VCE = 390V

TJ = 25oC OR TJ = 125oC, V

GE

= 12V

ICE, COLLECTOR TO EMITTER CURRENT (A)

t

fI

, FALL TIME (ns)

48

40

64

80

56

72

88

96

213456

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

RG = 50Ω, L = 1mH, VCE = 390V

V

GE

, GATE TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

2

14

0

4

10

6

8

12

16

4 8 12 16 2420 280

VCE = 600V

VCE = 400V

VCE = 200V

I

G(REF)

= 1mA, RL = 100Ω, TJ = 25oC

HGT1S3N60A4DS, HGTP3N60A4D

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

16

RG = 50Ω, L = 1mH, VCE = 390V

12

TJ = 25oC, TJ = 125oC, VGE = 12V

8

, TURN-ON DELAY TIME (ns)

d(ON)I

t

4

0

21 3456

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 15V

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

112

104

96

88

80

72

, TURN-OFF DELAY TIME (ns)

64

56

d(OFF)I

t

48

VGE = 12V, TJ = 125oC

RG = 50Ω, L = 1mH, VCE = 390V

213456

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

VGE = 15V, TJ = 125oC

= 15V, TJ = 25oC

V

GE

VGE = 12V, TJ = 25oC

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

20

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

46810 14

TJ = 25oC

TJ = 125oC

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

CE

= 10V

TJ = -55oC

12

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT

30

10 100

R

G

, GATE RESISTANCE (Ω)

100

3 1000

E

TOTAL

, TOTAL SWITCHING ENERGY LOSS (µJ)

1000

ICE = 4.5A

ICE = 3A

ICE = 1.5A

TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V

E

TOTAL

= E

ON2

+ E

OFF

VGE, GATE TO EMITTER VOLTAGE (V)

8

2.0 10 12

2.1

2.4

2.2

14 16

2.6

2.7

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

2.3

2.5

DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs

ICE = 4.5A

ICE = 1.5A

ICE = 3A

48

32

16

0

t

rr

, RECOVERY TIMES (ns)

IEC, FORWARD CURRENT (A)

1

64

40

24

8

23 56

56

4

125oC t

rr

dIEC/dt = 200A/µs

25oC t

rr

25oC t

a

25oC t

b

125oC t

a

125oC t

b

HGT1S3N60A4DS, HGTP3N60A4D

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

250

RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V

E

= E

TOTAL

200

ICE = 4.5A

150

ICE = 3A

100

ICE = 1.5A

50

, TOTAL SWITCHING ENERGY LOSS (µJ)

0

TOTAL

E

+ E

ON2

OFF

50 75 100

, CASE TEMPERATURE (oC)

T

C

12525 150

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE

700

600

500

400

300

200

C, CAPACITANCE (pF)

100

0

0 20406080100

C

IES

C

RES

C

OES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FREQUENCY = 1MHz

FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER

VO LTAGE

20

DUTY CYCLE < 0.5%, PULSE DURATION = 250µs

16

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE

vs GATE TO EMITTER VOLTAGE

12

8

, FORWARD CURRENT (A)

4

EC

I

0

03

125oC

12 45

VEC, FORWARD VOLTAGE (V)

FIGURE 19. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

25oC

FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT

160

80

40

0

Qrr, REVERSE RECOVERY CHARGE (nc)

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

1000200 400

200

600 800

120

125oC, IEC = 3A

125oC, IEC = 1.5A

25oC, IEC = 20A

25oC, IEC = 10A

VCE = 390V

t

fI

t

d(OFF)I

t

rI

t

d(ON)I

10%

90%

10%

90%

V

CE

I

CE

V

GE

I

CE

E

OFF

E

0N2

HGT1S3N60A4DS, HGTP3N60A4D

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

26

22

18

14

, RECOVERY TIMES (ns)

rr

10

t

6

200 600

125oC t

25oC t

a

400 800

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

a

IEC = 3A, VCE = 390V

125oC t

b

25oC t

b

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF

CURRENT

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

-2

10

, NORMALIZED THERMAL RESPONSE

θJC

Z

-5

10

SINGLE PULSE

-4

10

t1, RECTANGULAR PULSE DURATION (s)

10

1000

-3

FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF

CURRENT

t

1

P

D

t

2

DUTY FACTOR, D = t1 / t PEAK TJ = (PD X Z

-2

10

-1

10

θJC

X R

2

) + T

θJC

C

10

0

Test Circuit and Waveforms

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

HGTP3N60A4D DIODE TA49369

L = 1mH

RG = 50Ω

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS

DUT

+

-

= 390V

V

DD

HGT1S3N60A4DS, HGTP3N60A4D

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage rating of V permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or ﬂoating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a speciﬁc application. Other typical frequency vs collector current (I the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.

f

is deﬁned by f

MAX1

= 0.05/(t Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other deﬁnitions are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency limiting condition for an application other than T is important when controlling output ripple under a lightly loaded condition.

f

is deﬁned by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is deﬁned by PD = (TJM - TC)/R

D

The sum of device switching and conduction losses must not exceed P conduction losses (P P

= (VCE x ICE)/2.

C

E

ON2

shown in Figure 25. E power loss (I

. A 50% duty factor was used (Figure 3) and the

D

and E

OFF

CE

) are approximated by:

C

are deﬁned in the switching waveforms

is the integral of the instantaneous

ON2

x VCE) during turn-on and E integral of the instantaneous power loss (I turn-off. All tail losses are included in the calculation for E

; i.e., the collector current equals zero (ICE = 0).

OFF

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are deﬁned in Figure 25.

. t

JM

d(OFF)I

OFF

CE

+ E

OFF

). The

ON2

θJC

is the

x VCE) during

.

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

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4