Datasheet HGTP14N37G3VL, HGT1S14N37G3VLS Datasheet (Fairchild Semiconductor)

HGT1S14N37G3VLS, HGTP14N37G3VL

Data Sheet December 2001

14A, 370V N-Channel, Logic Level, Voltage
Clamping IGBTs

This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in
automotive ig nition circuits. Unique features in clude an
active voltage clamp between the collector and the gate
which provide s Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide ESD
protection for the logic level gate. Both a series resistor and
a shunt resister are provided in the gate circuit.

Formerly Developmental Type TA49169.

Ordering Information

PART NUMBER PACKAGE BRAND

HGT1S14N37G3VLS TO-263AB 14N37GVL
HGTP14N37G3VL TO-220AB 14N37GVL

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A

Symbol

COLLECTOR

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection

•T

= 175oC

J

• Internal Series and Shunt Gate Resistors

• Low Conduction Loss

• Ignition Energy Capable

Packaging

JEDEC TO-263AB

COLLECTOR

G

E

JEDEC TO-220AB

(FLANGE)

E

R

GATE

Fairchild CORPORATION IGBT PRODUCT IS COVE RED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

R

2

COLLECTOR

EMITTER

(FLANGE)

C

G

©2001 Fairchild Semiconductor Corpo ration HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

HGT1S14N37G3VLS, HGTP14N37G3VL

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGT1S14N37G3VLS,

HGTP14N37G3VL UNITS

Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector Current Continuous at V

= 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . I

GE

at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Inductive Switching Current at L = 3mH, T

at L = 3mH, T
Collector to Emitter Avalanche Energy at L = 3 mH, T
Pow er Dissi pation Total at T
Power Dissipation Derating T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/oC

C

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 25oC . . . . . . . . . . . . . . . . . . . . E

C

Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CER
ECS

C25

C110

GEM
SCIS
SCIS

STG

Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

D

J

380 V

24 V
25 A
18 A

±10 V

15 A

11.5 A
340 mJ
136 W

-55 to 175

-55 to 175

o

C

o

C

Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . . . .ESD 5 kV

Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . . . . ESD 2 kV

Maximum Lead T emperature f or Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300
260

o

C

o

C

NOTE:

1. May be exceeded if I

is limited to 10mA.

GEM

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV

Gate to Emitter Plateau Voltage V
Gate Charge Q

Collector to Emitter Clamp Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Emitter to Collector Leakage Current

Collector to Emitter On-State Voltage V

Gate to Emitter Threshold Voltage V
Gate Series Resistance R
Gate to Emitter Resistance R
Gate to Emitter Leakage Current I

CERIC

GEPIC

G(ON)IC

CE(CL)IC

ECSIC

CES

I

ECS

CE(ON)IC

GE(TH)IC

1
2

GES

= 10mA, RG = 1kΩ, VGE = 0V,

= -55oC to 175oC (Figure 16)

T

J

320 350 380 V

= 6.5A, VCE = 12V - 2.76 - V
= 6.5A, VCE = 12V, VGE = 5V

-27 - nC

(Figure 16)

= 15A, RG = 1kΩ 320 350 380 V
= 10mA 24 28 - V

VCE = 300V, VGE = 0V
(Figure 13)

V

= 250V,

CE

V

= 0V (Figure 13)

GE

VEC = -24V,
V

= 0V (Figure 13)

GE

= 6A, VGE = 4.0V

(Figures 3 through 9)

I

= 10A, VGE = 4.5V

C

(Figures 3 through 9)

I

= 14A, VGE = 5V

C

(Figures 3 through 9)

TJ = 25oC- - 40 µA
T

= 175oC - - 250 µA

J

= 25oC- - 10 µA

T

J

T

= 175oC- - 75 µA

J

= 25oC- - 10 mA

T

J

T

= 175oC- - 50 mA

J

TJ = -55oC- 1.31.45 V
T

= 25oC - 1.25 1.6 V

J

TJ = 25oC - 1.45 1.75 V
T

= 175oC- 1.5 1.9 V

J

TJ = 25oC- 1.6 2 V
T

= 175oC- 1.7 2.3 V

J

= 1mA, VCE = VGE (Figure 12) 1.3 1.8 2.2 V

- 70 150 Ω

10 18 26 kΩ

VGE = ±10V ±310 ±500 ±1000 µA

©2001 Fairchild Semiconductor Corpo ration HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

HGT1S14N37G3VLS, HGTP14N37G3VL

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Gate to Emitter Breakdown Voltage BV
Current Turn-On Delay Time -

Resistive Load

Current Turn-On Rise Time ­Resistive Load

Current Turn-Off Time -

t

d(OFF)I

Inductive Load

Inductive Use Test I

Thermal Resistance R

Typical Performance Curves

60

52

I

CAN BE LIMITED BY gfs at VGE = 5V

44

SCIS

Unless Otherwise Specified

RG = 1kΩ, V

GESIGES

t

d(ON)I IC

= ±2mA ±12 ±14 - V

= 6.5A, RG = 1kΩ, VGE = 5V,

R

= 2.1Ω, VDD = 14V, TJ = 150oC

L

(Figure 14)

t

IC = 6.5A, RG = 1kΩ

rI

V

GE

V

DD

= 5V, RL = 2.1Ω
= 14V, TJ = 150oC (Figure 14)

+ tfIIC = 6.5A, RG = 1kΩ

V

= 5V, L = 300µH

GE

= 300V, TJ = 150oC (Figure 14)

V

DD

SCIS

L = 3mH, VG = 5V,
R

= 1kΩ

G

(Figures 1 and 2)

θJC

(Figure 18) - - 1.1

= 5V

GE

-14µs

-37µs

-1030µs

= 150oC 11.5 - - A

T

C

T

= 25oC15 - - A

C

56

48

I

CAN BE LIMITED BY gfs at VGE = 5V

40

SCIS

RG = 1kΩ, V

GE

o

= 5V

C/W

36

28

20

12

, INDUCTIVE SWITCHING CURRENT (A)

4

SCIS

I

40 160 20012080

TJ = 150oC

, TIME IN AVALANCHE (ms)

t

AV

TJ = 25oC

FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT vs TIME IN AVALANCHE

1.28

1.24

1.20

1.16

1.12
V

= 4.5V

1.08

1.04

, COLLECTOR TO EMITTER VOLTAGE (V)

1.00

CE

-50 25 100 175

V

GE

TJ, JUNCTION TEMPERATURE (oC)

ICE = 6A

VGE = 4.0V

V

= 5.0V

GE

32

24

16

8

, INDUCTIVE SWITCHING CURRENT (A)

0

SCIS

I

0

TJ = 150oC

L, INDUCTANCE (mH)

TJ = 25oC

684210

FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT vs INDUCTANCE

1.50
ICE = 10A

1.46

1.42

1.38

1.34

, COLLECTOR TO EMITTER V OLTAGE (V)

CE

1.30

V

-50 25 100 175
TJ, JUNCTION TEMPERATURE (oC)

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

FIGURE 3. COLLECTOR TO EMITTER ON-STATE V OL TAGE

vs JUNCTION TEMPERARURE

©2001 Fairchild Semiconductor Corpo ration HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

FIGURE 4. COLLECTOR T O EMITTER ON-STATE V OLTAGE

vs JUNCTION TEMPERATURE

HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves

45

DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs

30

15

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

0

I

1

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

= 175oC

J

= 4.5V

V

GE

23

Unless Otherwise Specified (Continued)

VGE = 5.0V

= 4.0V

V

GE

54

45

30

15

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs

012 5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 150oC

J

VGE = 4.5V

VGE = 5.0V

VGE = 4.0V

34

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

70

DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs

60

50

40

30

20

10

0

0 2341

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= -40oC

J

VGE = 4.5V

VGE = 5.0V

VGE = 4.0V

60

DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

023

1
, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

= 25oC

J

VGE = 4.5V

VGE = 5.0V

VGE = 4.0V

45

5

FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE

60

V

GE

8.0V

50

5.0V

4.5V

40

4.0V

3.5V

30

3.0V

2.5V

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25oC

324501

40

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

32

24

16

TJ = 25oC

8

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

= 5V

CE

TJ = 150oC

TJ = -40oC

21345

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 10. TRANSFER CHARACTERISTIC

©2001 Fairchild Semiconductor Corpo ration HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves

28

24

20

16

12

8

, DC COLLECTOR CURRENT (A)

4

CE

I

0

5025 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified (Continued)

FIGURE 11. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

10000

1000

100

V

= 300V

CES

10

V

1

LEAKAGE CURRENTS (µA)

CES

= 250V

V

ECS

VGE = 5V

= 24V

175

2.0

1.8

1.6

1.4

1.2

, THRESHOLD VOLTAGE (V)

1.0

GE(TH)

V

0.8

-50 25 100 175
TJ, JUNCTION TEMPERATURE (oC)

ICE = 1mA
V

FIGURE 12. THRESHOLD VOL TAGE vs JUNCTION

TEMPERATURE

16

ICE = 6.5A, VGE = 5V, RG = 1kΩ

14

12

10

8

6

SWITCHING TIME (µs)

4

RESISTIVE t

INDUCTIVE t

OFF

RESISTIVE t

OFF

ON

CE

= V

GE

0.1
25 50 75 100 150

, JUNCTION TEMPERATURE (oC)

T

J

125

FIGURE 13. LEAKAGE CURRENT vs JUNCTION

TEMPERATURE

2400

2000

1600

C

1200

800

C, CAPACITANCE (pF)

400

0

0 5 10 15 20 25

V

IES

C

RES

C

OES

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

FREQUENCY = 1MHz

FIGURE 15. CAPA CITANCE vs COLLECTOR T O EMI TTER

VOLTAGE

175

2

25 50 75 100 150125 175

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE

8

I

= 1mA, RL = 1.865Ω, TJ = 25oC

G(REF)

6

VCE = 12V

4

2

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

056

VCE = 6V

16 40

8243248

Q

, GATE CHARGE (nC)

G

FIGURE 16. GATE CHARGE WAVEFORMS

©2001 Fairchild Semiconductor Corpo ration HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

HGT1S14N37G3VLS, HGTP14N37G3VL

Typical Performance Curves

360

350

340

330

, BREAKDOWN VOLTAGE (V)

CER

BV

10

10

, NORMALIZED THERMAL RESPONSE

θJC

Z

320

0

10

0.5

0.2

0.1

-1

0.05

0.02

0.01

-2

SINGLE PULSE

-5

10

268100

FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE

-4

10

Unless Otherwise Specified (Continued)

TJ (oC)

-55
25

150
175

4

RG, GATE SERIES RESISTANCE (kΩ)

DUTY FACTOR, D = t1 / t
PEAK TJ = (PD X Z

-3

10

t1, RECTANGULAR PULSE DURATION (s)

10

I

= 10mA

CER

t

1

P

2

X R

θJC

) + T

θJC

-2

D

t

C

-1

10

2

0

10

FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuits

3mH

C

R

PULSE

GEN

G

DUT

G

E

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. tON AND t

©2001 Fairchild Semiconductor Corpo ration HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

V

DD

RG = 1kΩ

5V

G

OFF

R

or

LOAD

L

C

DUT

E

+

V

DD

-

SWITCHING TEST CIRCUIT