Datasheet HGTP14N36G3VL, HGT1S14N36G3VLS Datasheet (Fairchild Semiconductor)

December 2001

HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS

14A, 360V N-Channel,

Logic Level, Voltage Clamping IGBTs

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection

•T

= 175oC

J

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ig niti on coil driver in auto­motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro­vides Self Clamped Inductive Switching (SCIS) capability in
ignition c ircuits. Internal diodes provide ESD pr otection for
the logic level gate. Both a series resistor and a shunt
resister are provi ded in the gate circuit.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTP14N36G3VL TO-220AB 14N36GVL
HGT1S14N36G3VL TO-262AA 14N36GVL
HGT1S14N36G3VLS TO-263AB 14N36GVL

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.

The development type number for this device is TA49021.

Packages

JEDEC TO-220AB

COLLECTOR
(FLANGE)

JEDEC TO-262AA

COLLECTOR
(FLANGE)

JEDEC TO-263AB

GATE

EMITTER

T e rminal Dia gra m

N-CHANNEL ENHANCEMENT MODE

GATE

EMITTER

COLLECTOR

GATE

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

COLLECTOR

R

1

R

2

EMITTER

Absolute Maximum Ratings

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous at V

Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Inductive Switching Current at L = 2.3mH, T

at L = 2.3mH, T
Collector to Emitter Avalanche Energy at L = 2.3mH, T
Power Dissipation Total at T
Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV

NOTE: May be exceeded if I

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

at VGE = 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . . I

= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

C

GEM

TC = +25oC, Unless Otherwise Specified

HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS UNITS

CER

= 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . I

GE

= +25oC . . . . . . . . . . . . . . . . . . . . . . . I

C

= + 175oC . . . . . . . . . . . . . . . . . . . . . .I

C

> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC

is limited to 10mA.

= +25oC. . . . . . . . . . . . . . . E

C

ECS

C25

C100

GEM
SCIS
SCIS

AS

D

, T

J

STG

L

390 V

24 V
18 A
14 A

±10 V

17 A

12 A
332 mJ
100 W

-40 to +175
260

o

C

o

C

Specifications HGTP14N36G3VL, HGT1S14N36G3 VL, HGT1S14N36 G3 VLS

Electrical Specifications

TC = +25oC, Unless Otherwise Specified

PARAMETERS SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV

Gate-Emitter Plateau Voltage V

Gate Charge Q

Collector-Emitter Clamp Breakdown
Voltage

Emitter-Collector Breakdown Voltage BV

Collector-Emitter Leakage Current I

Collector-Emitter Saturation Voltage V

CER

GEP

G(ON)IC

BV

CE(CL)IC

ECS

CER

CE(SAT)IC

LIMITS

UNITSMIN TYP MAX

IC = 10mA,
V

= 0V

GE

= 1kΩ

R

GE

IC = 7A,
V

= 12V

CE

= 7A,

V

= 12V

CE

= 7A

R

= 1000Ω

G

= +175oC 320 355 400 V

T

C

T

= +25oC 330 360 390 V

C

= -40oC 320 350 385 V

T

C

= +25oC-2.7-V

T

C

= +25oC-24-nC

T

C

T

= +175oC 350 380 410 V

C

IC = 10mA TC = +25oC2428-V

VCE = 250V

= 1kΩ

R

GE

= 7A

V

= 4.5V

GE

T

= +25oC-- 25µA

C

T

= +175oC - - 250 µA

C

= +25oC - 1. 25 1.45 V

T

C

T

= +175oC - 1.15 1.6 V

C

Gate-Emitter Threshold Voltage V

GE(TH)IC

Gate Series Resistance R

Gate-Emitter Resistance R

Gate-Emitter Leakage Current I

Gate-Emitter Breakdown Voltage BV

Current Turn-Off Time-Inductive Load t

D(OFF)I

t

F(OFF)I

Inductive Use Test I

Thermal Resistance R

GES

GES

SCIS

θJC

= 14A

I

C

= 5V

V

GE

= 1mA

= V

V

CE

GE

1

2

T

= +25oC-1.62.2V

C

= +175oC-1.72.9V

T

C

TC = +25oC 1.3 1.8 2.2 V

TC = +25oC-75-Ω

TC = +25oC 102030kΩ

VGE = ±10V ±330 ±500 ±1000 µA

I

= ±2mA ±12 ±14 - V

GES

+

IC = 7A, RL = 28Ω
R

= 25Ω, L = 550µH,

G

= 300V, VGE = 5V,

V

CL

T

= +175oC

C

L = 2.3mH,
V

= 5V,

G

= +175oC12--A

T

C

T

= +25oC17--A

C

-7-µs

--1.5oC/W

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

PULSE DURATIO N = 250µs, DUTY CYCLE <0.5%, V

25

CE

= 10V

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T

40

10V

20

30

15

20

10

o

+25

+175oC

5

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

C

-40oC

2 1345

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

0246810

VGE, GATE-TO-EMITTER VOLTAGE (V)

, COLLECTOR-TO-EMITTER VOLTAGE (V)

V

CE

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

35

30

25

20

15

TC = +175oC

V

V

V

GE

GE

GE

= 5.0V

= 4.5V

= 4.0V

35

VGE = 4.5V

30

25

20

15

3.5V

-40oC

5.0V

4.5V

4.0V

3.0V

2.5V

= +25oC

C

o

+25

+175oC

C

10

5

, COLLECTOR EMITTER CURRENT (A)

CE

I

0

V

, SATURATION VOLTAGE (V)

CE(SAT)

4

53210

FIGURE 3. COLLECTO R-EMI TTER CU RRENT AS A FUNC TION

OF SATURATION VOLTAGE

1.35

1.25

1.15

, SATURATION VOLTAGE (V)

CE(SAT)

V

1.05

-25 +25 +75 +125 +175
TJ, JUNCTION TEMPERATURE (oC)

ICE = 7A

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

10

5

, COLLECTOR EMITTER CURRENT (A)

CE

I

0

01234 5

V

, SATURATION VOLTAGE (V)

CE(SAT)

FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE

2.25
ICE = 14A

VGE = 4.0V

2.00

1.75

, SATURATION VOLTAGE (V)

CE(SAT)

V

1.50

-25 +25 +75
TJ, JUNCTION TEMPERATURE (oC)

VGE = 4.5V

VGE = 5.0V

+125

+175

FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

20
18

16
14
12
10

8
6
4
2

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

+25 +50 +75 +125 +150

T

, CASE TEMPERATURE (oC)

C

+100 +175

(Continued)

VGE = 5V

FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF CASE TEMPERATURE

1E4

1E3

V

= 20V

ECS

1.2

1.1

1.0

0.9

0.8

0.7

NORMALIZED THRESHOLD VOLTAGE

0.6

GE(TH),

V

-25

+25 +75 +125 +175

, JUNCTION TEMPERATURE (oC)

T

J

ICE = 1ma

FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A

FUNCTION OF JUNCTION TEMPERATURE

7.0
VCE = 300V, VGE = 5V

6.5

6.0

= 25Ω, L = 550µH

R

GE

I

= 37Ω,

R

L

CE

= 7A

1E2

1E1

LEAKAGE CURRENT (µA)

1E0

1E-1

+20 +60 +100 +140

V

= 250V

CES

, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF

JUNCTION TEMPERATURE

+180

5.5

5.0

4.5

TURN OFF TIME (µs)

4.0

(OFF)I,

t

3.5

3.0

+25 +50 + 75 +100 +150 +175+125

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. TURN-OFF TIME AS A FUNCTION OF

JUNCTION TEMPERATURE

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

25

o

+25

C

(Continued)

V

20

o

C

+175

15

10

, INDUCTIVE SWITCHING CURRENT (A)

C

I

5

0

24

6

810

L, INDUCTANCE (mH)

FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT AS A FUNCTION OF INDUCTANCE

2000
1800

1600
1400

C

1200
1000

800
600

C, CAPACITANCE (pF)

400
200

C

0

RES

C

0 5 10 15 20 25

V

, COLLECTOR-TO-EMITTER VOLTAGE (V)

CE

FREQUENCY = 1MHz

IES

OES

GE

= 5V

650

V

= 5V

GE

600

550

+25

o

C

500

450
400

, ENERGY (mJ)

350

AS

E

300
250

+175

o

C

200
150

0

2

4

L, INDUCTANCE (mH)

6

8

10

FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY

AS A FUNCTION OF INDUCTANCE

REF IG = 1mA, RL = 1.7Ω, TC = +25oC

12

10

8

V

= 12V

CE

6

V

= 4V

CE

4

V

= 8V

CE

2

, COLLECTOR-EMITTER VOLTAGE (V)

CE

0

V

0

5

Q

15

10

, GATE CHARGE (nC)

G

20

25

6

5

4

3

2

, GA TE-EMITTER VOLTAGE (V)

1

GE

V

0

30

FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-

FIGURE 14. GATE CHARGE WAVEFORMS

EMITTER VOLTAGE

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

Typical Performance Curves

(Continued)

0

10

0.5

0.2
t

0.1

-1

10

0.05

PD

1

t

2

0.02

DUTY FACTOR, D = t1 / t

, NORMALIZED THERMAL RESPONSE

θJC

Z

10

0.01
SINGLE PULSE

-2

-5

10

PEAK TJ = (PD X Z

-4

10

-3

10

-2

10

10

θJC

X R

-1

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 15. NORMALIZED TRANSIENT THERMAL

IMPEDANCE, JUNCTION TO CASE

Test Circuits

2.3mH

355

350

345

340

25oC

335

, COLLECTOR-EMITTER

2

) + T

θJC

C

1

0

10

10

CER

BV

BKDN VOLTAGE (V)

330

325

0

2000 4000 6000 8000 10000

R

, GATE-TO- EMITTER RESISTANCE (Ω)

GE

175oC

FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF

GATE-EMITTER RESISTANCE

R

L

V

DD

L = 550µH

C

R

= 25Ω

GEN

5V

R

G

DUT

G

E

FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT TEST CIRCUIT

1/R

= 1/R

G

+ 1/R

GEN

R

GEN

= 50Ω

GE

G

DUT

10V

C

= 50Ω

R

GE

E

FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME

TEST CIRCUIT

+

-

V

CC

300V

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Handling Precautions for IGBT’s

Insulated Gate Bipolar Transistors are susceptible to gate­insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not disch arged th rough th e
device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in pro­duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam­age problems due to electrostatic discharge. IGBT’s can be
handled saf ely if the following basic preca uti ons are taken:

1. Prior to assembly int o a circ uit, al l lead s sho uld be k ept

.

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATEN TS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

shorted together either by the use of metal shorting
springs or by the insertion into co nduct ive mater ial su ch
as †“ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand from their carriers ,
the hand being used shoul d be ground ed by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be gro und ed.

4. Devices should ne ver be i nserted into or rem oved fro m
circuits with power on.

5. Gate Voltage Rating -The gate-voltage rating of V
may be exceeded i f I

is limited to 10mA.

GEM

† Trademark Emerson and Cumm ing, Inc

GEM

©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4