Datasheet hgtp14n3 Datasheet

HGTP14N36G3VL,

SEMICONDUCTOR

June 1995

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection
= 175oC

•T

J

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto­motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro­vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTP14N36G3VL TO-220AB 14N36GVL
HGT1S14N36G3VL TO-262AA 14N36GVL
HGT1S14N36G3VLS TO-263AB 14N36GVL

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.

The development type number for this device is TA49021.

HGT1S14N36G3VL,

HGT1S14N36G3VLS

14A, 360V N-Channel,

Logic Level, Voltage Clamping IGBTs

Packages

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

COLLECTOR
(FLANGE)

JEDEC TO-262AA

EMITTER

COLLECTOR

COLLECTOR
(FLANGE)

JEDEC TO-263AB

GATE

EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

GATE

A

A

M

A

R

1

GATE

COLLECTOR

(FLANGE)

COLLECTOR

R

2

EMITTER

Absolute Maximum Ratings T

= +25oC, Unless Otherwise Specified

C

HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS UNITS

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous at V

Gate-Emitter Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Inductive Switching Current at L = 2.3mH, T

at L = 2.3mH, T
Collector to Emitter Avalanche Energy at L = 2.3mH, T
Power Dissipation Total at T
Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T

= 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . I

GE

= 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . .I

at V

GE

= +25oC . . . . . . . . . . . . . . . . . . . . . . .I

C

= + 175oC . . . . . . . . . . . . . . . . . . . . . .I

C

= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC

C

= +25oC. . . . . . . . . . . . . . . E

C

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV

NOTE: May be exceeded if I

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1995

is limited to 10mA.

GEM

3-55

CER
ECS

C25

C100

GEM
SCIS
SCIS

AS

D

, T

J

STG

L

390 V

24 V
18 A
14 A

±10 V

17 A

12 A
332 mJ
100 W

-40 to +175
260

File Number

o

C

o

C

4008

Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV

Gate-Emitter Plateau Voltage V

Gate Charge Q

Collector-Emitter Clamp Breakdown
Voltage

Emitter-Collector Breakdown Voltage BV

Collector-Emitter Leakage Current I

Collector-Emitter Saturation Voltage V

CER

GEP

G(ON)IC

BV

CE(CL)IC

ECS

CER

CE(SAT)IC

LIMITS

UNITSMIN TYP MAX

IC = 10mA,

TC = +175oC 320 355 400 V
VGE = 0V
RGE = 1kΩ

TC = +25oC 330 360 390 V

TC = -40oC 320 350 385 V

IC = 7A,

TC = +25oC - 2.7 - V
VCE = 12V

= 7A,

TC = +25oC - 24 - nC
VCE = 12V

= 7A

TC = +175oC 350 380 410 V
RG = 1000Ω

IC = 10mA TC = +25oC2428-V

VCE = 250V

TC = +25oC-- 25µA
RGE = 1kΩ

T

= +175oC - - 250 µA

C

= 7A

TC = +25oC - 1.25 1.45 V
VGE = 4.5V

TC = +175oC - 1.15 1.6 V

Gate-Emitter Threshold Voltage V

GE(TH)IC

Gate Series Resistance R

Gate-Emitter Resistance R

Gate-Emitter Leakage Current I

Gate-Emitter Breakdown Voltage BV

Current Turn-Off Time-Inductive Load t

D(OFF)I

t

F(OFF)I

Inductive Use Test I

Thermal Resistance R

GES

GES

SCIS

θJC

IC = 14A

TC = +25oC - 1.6 2.2 V
VGE = 5V

TC = +175oC - 1.7 2.9 V

= 1mA

VCE = V

GE

1

2

TC = +25oC 1.3 1.8 2.2 V

TC = +25oC - 75 - Ω

TC = +25oC 102030kΩ

VGE = ±10V ±330 ±500 ±1000 µA

I

= ±2mA ±12 ±14 - V

GES

+

IC = 7A, RL = 28Ω

-7-µs
RG = 25Ω, L = 550µH,
VCL = 300V, VGE = 5V,
TC = +175oC

L = 2.3mH,

TC = +175oC12--A

VG = 5V,

T

= +25oC17--A

C

- - 1.5

o

C/W

3-56

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V

25

CE

= 10V

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T

40

10V

20

30

15

20

10

o

+25

+175oC

5

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

VGE, GATE-TO-EMITTER VOLTAGE (V)

C

-40oC

21345

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

0246810

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

35

30

25

20

15

TC = +175oC

VGE = 5.0V

V

= 4.5V

GE

= 4.0V

V

GE

35

V

30

25

20

15

GE

= 4.5V

3.5V

-40oC

5.0V

4.5V

4.0V

3.0V

2.5V

= +25oC

C

o

+25

+175oC

C

10

5

, COLLECTOR EMITTER CURRENT (A)

CE

I

0

, SATURATION VOLTAGE (V)

V

CE(SAT)

4

53210

FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE

1.35

1.25

1.15

, SATURATION VOLTAGE (V)

CE(SAT)

V

1.05

-25 +25 +75 +125 +175
TJ, JUNCTION TEMPERATURE (oC)

ICE = 7A

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

10

5

, COLLECTOR EMITTER CURRENT (A)

CE

I

0

01234 5

V

, SATURATION VOLTAGE (V)

CE(SAT)

FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE

2.25
ICE = 14A

VGE = 4.0V

2.00

1.75

, SATURATION VOLTAGE (V)

CE(SAT)

V

1.50

-25 +25 +75
, JUNCTION TEMPERATURE (oC)

T

J

VGE = 4.5V

VGE = 5.0V

+125

+175

FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

3-57

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

20
18

16
14
12
10

8
6
4
2

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

+25 +50 +75 +125 +150

, CASE TEMPERATURE (oC)

T

C

+100 +175

(Continued)

VGE = 5V

FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF CASE TEMPERATURE

1E4

1E3

1E2

V

= 20V

ECS

1.2

1.1

1.0

0.9

0.8

0.7

NORMALIZED THRESHOLD VOLTAGE

0.6

GE(TH),

V

-25

+25 +75 +125 +175

T

, JUNCTION TEMPERATURE (oC)

J

ICE = 1ma

FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A

FUNCTION OF JUNCTION TEMPERATURE

7.0
VCE = 300V, VGE = 5V

6.5

6.0

5.5

5.0

= 25Ω, L = 550µH

R

GE

I

= 37Ω,

R

L

CE

= 7A

1E1

LEAKAGE CURRENT (µA)

1E0

1E-1

+20 +60 +100 +140

V

= 250V

CES

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF

JUNCTION TEMPERATURE

25

o

C

+25

20

+175oC

15

10

, INDUCTIVE SWITCHING CURRENT (A)

C

I

5

0

2

4

L, INDUCTANCE (mH)

6

V

GE

8

FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT AS A FUNCTION OF INDUCTANCE

+180

= 5V

4.5

TURN OFF TIME (µs)

4.0

(OFF)I,

t

3.5

3.0

+25 +50 + 75 +100 +150 +175+125

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. TURN-OFF TIME AS A FUNCTION OF

JUNCTION TEMPERATURE

650

V

= 5V

GE

600

550
500
450

400

, ENERGY (mJ)

350

AS

E

300
250
200

10

150

0

2

L, INDUCTANCE (mH)

+175oC

4

+25

o

C

6

8

10

FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY

AS A FUNCTION OF INDUCTANCE

3-58

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Typical Performance Curves

2000
1800

(Continued)

FREQUENCY = 1MHz

1600

C

1400

IES

1200
1000

800
600

C, CAPACITANCE (pF)

400

C

200

C

0

RES

OES

0 5 10 15 20 25

V

, COLLECTOR-TO-EMITTER VOLTAGE (V)

CE

FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-

EMITTER VOLTAGE

0

10

0.5

0.2
t

0.1

-1

10

0.05

PD

1

t

2

0.02

DUTY FACTOR, D = t1 / t

0.01

, NORMALIZED THERMAL RESPONSE

SINGLE PULSE

θJC

-2

Z

10

-5

10

-4

10

PEAK TJ = (PDX Z

-3

10

10

-2

θJC

10

X R

-1

2

) + T

θJC

C

1

0

10

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 15. NORMALIZED TRANSIENT THERMAL

IMPEDANCE, JUNCTION TO CASE

REF IG= 1mA, RL= 1.7Ω, TC= +25oC

12

10

8

VCE= 12V

6

6

5

4

3

VCE= 4V

4

2

VCE= 8V

2

, COLLECTOR-EMITTER VOLTAGE (V)

CE

0

V

0

5

Q

15

10

, GATE CHARGE (nC)

G

20

25

1

0

30

FIGURE 14. GATE CHARGE WAVEFORMS

355

350

345

340

25oC

335

, COLLECTOR-EMITTER

BKDN VOLTAGE (V)

CER

330

BV

325

0

2000 4000 6000 8000 10000

175oC

RGE, GATE-TO- EMITTER RESISTANCE (Ω)

FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF

GATE-EMITTER RESISTANCE

, GATE-EMITTER VOLTAGE (V)

GE

V

Test Circuits

2.3mH

C

R

= 25Ω

GEN

5V

FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT TEST CIRCUIT

R

G

DUT

G

E

R

L

V

DD

L = 550µH

C

1/R

= 1/R

G

R

10V

GEN

GEN

+ 1/R

= 50Ω

GE

G

R

GE

DUT

= 50Ω

+

-

V

CC

300V

E

FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME

TEST CIRCUIT

3-59

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Handling Precautions for IGBT’s

Insulated Gate Bipolar Transistors are susceptible to gate­insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application proce­dures, however, IGBT’s are currently being extensively used
in production by numerous equipment manufacturers in mili­tary, industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBT’s can
be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as † “ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating -The gate-voltage rating of V
may be exceeded if I

is limited to 10mA.

GEM

† Trademark Emerson and Cumming, Inc

.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

GEM

3-60