Datasheet HGTP12N60A4, HGTG12N60A4 Datasheet (Fairchild Semiconductor)

HGTP12N60A4, HGTG12N60A4,

HGT1S12N60A4S9A

Data Sheet August 2003

600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transis tor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49335.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60A4 TO-220AB 12N60A4
HGTG12N60A4 TO-247 12N60A4
HGT1S12N60A4S9A TO-263AB 12N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• >100kHz Operation at 390V, 12A

• 200kHz Operation at 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

COLLECTOR
(FLANGE)

JEDEC TO-263AB

= 125oC

J

E
C
G

G

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

E

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE METAL)

COLLECTOR
(FLANGE)

E

C

G

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60A4, HGTP12N60A4,

HGT1S12N60A4S9A UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

= 110oC

At T

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

C25

CM

GES

GEM

D

, T

J

STG

Maximum Lead T emperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

54 A
23 A
96 A

±20 V
±30 V

167 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2.0mA

J

= 12A,

V

GE

= 15V

T

= 25oC-2.02.7V

J

T

= 125oC-1.62.0V

J

IC = 250µA, VCE = 600V - 5.6 - V
VGE = ±20V - - ±250 nA

= 150oC, RG = 10Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

60 - - A

IC = 12A, VCE = 300V - 8 - V
IC = 12A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC
I

= 12A

CE

= 390V

V

CE

=15V

V

GE

R

= 10Ω

G

L = 500µH
Test Circuit (Figure 20)

V

= 15V - 78 96 nC

GE

V

= 20V - 97 120 nC

GE

-17- ns

-8-ns

-96- ns

-18- ns

-55- µJ

- 160 - µJ

-50- µJ

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 12A

CE

= 390V

V

CE

= 15V

V

GE

R

= 10Ω

G

L = 500µH
Test Circuit (Figure 20)

NOTES:

2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

Typical Performance Curves Unless Otherwise Specified

60

50

V

= 15V

GE

70

TJ = 150oC, RG = 10Ω, V

60

-17- ns

-16- ns

- 110 170 ns

-7095ns

-55- µJ

- 250 350 µJ

- 175 285 µJ

- - 0.75

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 200µH

GE

o

C/W

ON2

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

V

T

300

100

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)
= 0.75oC/W, SEE NOTES

R

ØJC

, OPERATING FREQUENCY (kHz)

MAX

TJ = 125oC, RG = 10Ω, L = 500µH, V

f

10

1

I

CE

d(OFF)I

3

, COLLECTOR TO EMITTER CURRENT (A)

+ t

ON2

d(ON)I

+ E

OFF

)

)

CE

= 390V

75

C

o

15V

C

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

GE

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20

VCE = 390V, RG = 10Ω, TJ = 125oC

18
16
14
12
10

8
6
4
2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

3010 20

9101112 15

V

, GATE TO EMITTER V OLTAGE (V)

GE

I

SC

t

SC

13 14

300
275
250
225
200
175
150
125
100
75

50

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Typical Performance Curves Unless Otherwise Specified (Continued)

24

DUTY CYCLE < 0.5%, V
PULSE DURA TION = 250µs

20

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

00.51.0
, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

= 12V

GE

TJ = 150oC

TJ = 125oC

TJ = 25oC

1.5 2 2.5

24

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs

20

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0 0.5 1.0 1.5 2 2.5

VCE, COLLECTOR TO EMITTER VOLTA GE (V)

TJ = 150oC

TJ = 125oC

TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STA TE VOLTAGE

700

RG = 10Ω, L = 500µH, VCE = 390V

600

TJ = 125oC, VGE = 12V, VGE = 15V

500

400

300

200

, TURN-ON ENERGY LOSS (µJ)

100

ON2

E

0

2

64 10121416818202224

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V, VGE = 15V

400

RG = 10Ω, L = 500µH, VCE = 390V

J)

µ

350

300

250

TJ = 125oC, VGE = 12V OR 15V

200

150

100

, TURN-OFF ENERGY LOSS (

50

OFF

E

0

642 101214168 18202224

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V OR 15V

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

18

RG = 10Ω, L = 500µH, VCE = 390V

17

16

15

14

13

12

, TURN-ON DELAY TIME (ns)

11

d(ON)I

t

10

642 101214168 18202224

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 12V

TJ = 25oC, TJ = 125oC, VGE = 15V

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR T O

EMITTER CURRENT

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

FIGURE 8. TURN-OFF ENERGY LOSS vs

COLLECTOR TO EMITTER CURRENT

32

RG = 10Ω, L = 500µH, VCE = 390V

28

24

TJ = 125oC, OR TJ = 25oC, V

20

16

12

, RISE TIME (ns)

rI

t

8

4

0

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC OR TJ = 125oC, V

642 10121416818202224

GE

= 12V

GE

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

= 15V

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Typical Performance Curves Unless Otherwise Specified (Continued)

115

RG = 10Ω, L = 500µH,

110

105

100

95

, TURN-OFF DELA Y TIME (ns)

90

d(OFF)I

t

85

482

6

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

= 390V

V

CE

VGE = 12V, VGE = 15V, TJ = 125oC

VGE = 12V, VGE = 15V, TJ = 25oC

12

10

18 20 22 24

1614

FIGURE 11. TURN-OFF DELA Y TIME vs COLLECT OR T O

EMITTER CURRENT

250

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

200

150

100

CE

= 10V

TJ = 25oC

TJ = -55oC

TJ = 125oC

90

80

70

60

50

40

, FALL TIME (ns)

fI

t

30

20

10

RG = 10Ω, L = 500µH, VCE = 390V

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

4826 12161410 18 20 22 24

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 12. FALL TIME vs COLL ECT OR T O EMITTER

CURRENT

16

I

= 1mA, RL = 25Ω, TC = 25oC

G(REF)

14

12

VCE = 600V

10

8

6

VCE = 400V

VCE = 200V

50

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

6

, GATE TO EMITTER VOLTAGE (V)

V

GE

11

137 8 9 10 12

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V

E

= E

TOTAL

1.0

0.8

0.6

0.4

0.2

, TOTAL SWITCHING ENERGY LOSS (mJ)

0

TOTAL

E

+ E

ON2

OFF

50 75 100

T

, CASE TEMPERATURE (oC)

C

I

= 24A

CE

ICE = 12A

ICE = 6A

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE

14 15

12525 150

4

, GATE TO EMITTER VOLTAGE (V)

2

GE

V

16

0

10 20 30 40 6050 70 800

10

TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V

E

= E

TOTAL

ICE = 24A

1

ICE = 12A

ICE = 6A

, TOTAL SWITCHING ENERGY LOSS (mJ)

TOTAL

0.1

E

10 100

51000

QG, GATE CHARGE (nC)

+ E

ON2

OFF

R

, GATE RESISTANCE (Ω)

G

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Typical Performance Curves Unless Otherwise Specified (Continued)

3.0
FREQUENCY = 1MHz

2.5

2.0

C

C

IES

OES

1.5

1.0

C, CAPACITANCE (nF)

0.5

C

RES

0

0 5 10 15 20 25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPA CITANCE vs COLLECTOR T O EMITTER

VOLTAGE

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

-2

10

Z

-5

10

SINGLE PULSE

10

-4

-3

10

t1, RECTANGULAR PULSE DURATION (s)

2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, T

2.3

2.2

ICE = 18A

2.1

2.0

, COLLECTOR TO EMITTER VOLTAGE (V)

1.9

CE

V

89

10 12

11 13 14 15 16

ICE = 12A

ICE = 6A

VGE, GATE TO EMITTER V OLTAGE (V)

FIGURE 18. COLLECTOR T O EMITTER ON-STATE V OLTA GE

vs GATE TO EMITTER VOLTAGE

t

1

P

D

t

2

DUTY FACTOR, D = t1 / t

PEAK TJ = (PD X Z

-2

10

-1

10

10

2

X R

θJC

) + T

θJC

0

= 25oC

J

C

1

10

FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

RHRP660

90%

V

GE

E

OFF

t

fI

RG = 10Ω

L = 500µH

V

CE

90%

+

V

= 390V

DD

-

I

CE

t

d(OFF)I

10%

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

E

ON2

10%

t

d(ON)I

t

rI

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being ex tensively
used in production b y nume rous equipme nt manuf acturers i n
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are rem ov ed b y hand from their carriers ,
the hand being used should be grounde d b y any su itab le
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.

5. Gate V olta ge Rating - Nev er e xceed the gate-v oltag e
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termin ation - The gates of thes e de vices are
essentially capacitors. Circuits that leave the gate open­circuited or floating shoul d be a v oide d. Thes e condi tions
can result in turn-on of the device due to voltage build up
on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information s hown f or a ty pical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the deno minator) ha s been a rbitra rily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T

f

is defined by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD = (TJM - TC)/R

D

The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P

C

E

ON2

shown in Figure 21. E

. A 50% duty factor was used (Figure 3) and the

D

) are approximated b y

C

=(VCExICE)/2.

and E

are defined in the switching waveforms

OFF

is the integral of the

ON2

instantaneous power loss (I
E

is the integral of the instantan eou s power loss

OFF

(I

CExVCE

calculation for E
(I

CE

) during turn-off. All tail losses are incl ude d in the

; i.e., the collector current equals zero

OFF

= 0).

) plots are possible using

CE

; whichever is smaller at each

+ t

d(OFF)I

are defined in Figure 21.

d(ON)I

OFF

x VCE) during turn-on and

CE

d(ON)I

JM

+ E

).

.

ON2

). The

θJC

.

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™

2

CMOS™

E
EnSigna™
FACT™

FACT Quiet Series™

®

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™

2

C™

I
ImpliedDisconnect™

ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™

LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC

®

OPTOPLANAR™
PACMAN™
POP™

Power247™
PowerTrench
QFET

®

®

QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3

SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET

®

VCX™

®

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.

As used herein:

1. Life support devices or systems are devices or syst em s
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5