Datasheet HGTP10N40C1, HGTH12N50E1, HGTH12N50C1, HGTH12N40E1, HGTP10N50E1 Datasheet (Intersil Corporation)

3-15

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HGTP10N40C1, 40E1, 50C1, 50E1,

HGTH12N40C1, 40E1, 50C1, 50E1

10A, 12A,

400V and 500V N-Channel IGBTs

Features

• 10A and 12A, 400V and 500V

•V

CE(ON)

: 2.5V Max.

•T

FI

: 1µs, 0.5µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• No Anti-Parallel Diode

Applications

• Power Supplies

• Motor Drives

• Protection Circuits

Description

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTH12N40C1 TO-218AC G12N40C1
HGTH12N40E1 TO-218AC G12N40E1
HGTH12N50C1 TO-218AC G12N50C1
HGTH12N50E1 TO-218AC G12N50E1
HGTP10N40C1 TO-220AB G10N40C1
HGTP10N40E1 TO-220AB G10N40E1
HGTP10N50C1 TO-220AB G10N50C1
HGTP10N50E1 TO-220AB G10N50E1

NOTE: When ordering, use the entire part number.

April 1995

Packages

HGTH-TYPES JEDEC TO-218AC

HGTP-TYPES JEDEC TO-220AB

GATE

COLLECTOR

EMITTER

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

GATE

COLLECTOR

EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

C

E

G

Absolute Maximum Ratings T

C

= +25oC, Unless Otherwise Specified

HGTH12N40C1
HGTH12N40E1

HGTH12N50C1
HGTH12N50E1

HGTP10N40C1
HGTP10N40E1

HGTP10N50C1
HGTP10N50E1 UNITS

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V

CES

400 500 400 500 V

Collector-Gate Voltage R

GE

= 1MΩ. . . . . . . . . . . . . . . . V

CGR

400 500 400 500 V

Reverse Collector-Emitter Voltage . . . . . . . . . . . . V

ECS

(rev.) 15 15 -5 -5 V

Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GE

±20 ±20 ±20 ±20 V

Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I

C

12 12 10 10 A

Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I

CM

17.5 17.5 17.5 17.5 A

Power Dissipation at T

C

= +25oC . . . . . . . . . . . . . . . . . . . P

D

75 75 60 60 W

Power Dissipation Derating Above T

C

> +25oC . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC

Operating and Storage Junction Temperature Range . . . T

J

, T

STG

-55 to +150 -55 to +150 -55 to +150 -55 to +150

o

C

File Number 1697.3

3-16

Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

Electrical Specifications T

C

= +25oC, Unless Otherwise Specified

PARAMETERS SYMBOL TEST CONDITIONS

LIMITS

UNITS

HGTH12N40C1, E1,

HGTP10N40C1, E1

HGTH12N50C1, E1,

HGTP10N50C1, E1

MIN MAX MIN MAX

Collector-Emitter Breakdown
Voltage

BV

CESIC

= 1mA, VGE = 0 400 - 500 - V

Gate Threshold Voltage V

GE(TH)VGE

= VCE, IC = 1mA 2.0 4.5

3 (Typ)

2.0 4.5
3 (Typ)

V

Zero Gate Voltage Collector
Current

I

CES

VCE = 400V, TC = +25oC - 250 - - µA
VCE = 500V, TC = +25oC ---250µA
VCE = 400V, TC = +125oC - 1000 - - µA
VCE = 500V, TC = +125oC - - - 1000 µA

Gate-Emitter Leakage Current I

GES

VGE = ±20V, VCE = 0 - 100 - 100 nA

Collector-Emitter on Voltage V

CE(ON)IC

= 10A, VGE = 10V - 2.5 - 2.5 V

IC = 17.5A, VGE = 20V - 3.2 - 3.2 V

Gate-Emitter Plateau Voltage V

GEP

IC = 5A, VCE = 10V - 6 (Typ) - 6 (Typ) V

On-State Gate Charge Q

G(ON)IC

= 5A, VCE = 10V - 19 (Typ) - 19 (Typ) nC

Turn-On Delay Time t

D(ON)IIC

= 10A, V

CE(CLP)

= 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω

- 50 - 50 ns

Rise Time t

RI

- 50 - 50 ns

Turn-Off Delay Time t

D(OFF)I

- 400 - 400 ns

Fall Time t

FI

40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns
40C1, 50C1 400 500 400 500 ns

Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W

OFF

x Frequency)

W

OFFIC

= 10A, V

CE(CLP)

= 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω

40E1, 50E1 680 (Typ) µJ
40C1, 50C1 400 (Typ) µJ

Thermal Resistance
Junction-to-Case

R

θJC

HGTH, HGTM - 1.67 - 1.67

o

C/W

HGTP - 2.083 - 2.083

o

C/W

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

3-17

HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

Typical Performance Curves

FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,

VGE = 0V ARE THE MIN. ALLOWABLE VALUES

FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-

ING CURVE

FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-

AGE vs JUNCTION TEMPERATURE

FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-

TERISTICS

FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS FIGURE 6. TYPICAL SATURATION CHARACTERISTICS

20.0

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0

-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175

I

CE

, COLLECTOR CURRENT (A)

TD, JUNCTION TEMPERATURE (oC)

VGE = 10V, R

GEN

= RGE = 100Ω

100

80

60

40

20

0 +25 +50 +75 +100 +125 +150

RATED POWER DISSIPATION (%)

TC, CASE TEMPERATURE (oC)

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-50 0 +50 +100 +150

NORMALIZED GATE THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

VGE = VCE, IC = 1mA

r(t), EFFECTIVE TRANSIENT THERMAL

IMPEDANCE (NORMALIZED)

10

1.0

0.1

0.01

0.01 0.1 1.0 10 100 1000
t, TIME (ms)

Z

θJC

(t) = r(t)R

θJC

,

D CURVES APPLY FOR POWER PULSE,
TRAIN SHOWN READ TIME AT t1,
T

J(PEAK)

- TC = P

(PEAK)ZθJC

(t)

D = 0.05

SINGLE PULSE

D = 0.5

D = 0.2

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0 2.5 5.0 7.5 10.0

I

CE

, ON-STATE COLLECTOR CURRENT (A)

VGE, GATE-TO-EMITTER VOLTAGE (V)

PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

-40oC

+25oC

+125oC

17.5

15.0

12.5

10.0

7.5

5.0

2.5

012345

I

CE

, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VGE = 20V
VGE = 10V

VGE = 8V

VGE = 7V

VGE = 6V

VGE = 5V

VGE = 4V

T

C

= +25oC

3-18

HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

FIGURE 7. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE

vs COLLECTOR CURRENT

FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER

VOLTAGE

FIGURE 9. TYPICAL V

CE(ON)

vs TEMPERATURE FIGURE 10. TYPICAL TURN-OFF DELAY TIME

FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS FIGURE 12. TYPICAL FALL TIME (IC = 5A)

Typical Performance Curves

(Continued)

17.5

15.0

12.5

10.0

7.5

5.0

2.5

01234

I

CE

, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

+25oC

1000

800

600

400

200

0

C, CAPACITANCE (pF)

01020304050

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

f = 1MHz

CISS

COSS

CRSS

1200

3.00

2.75

2.50

2.25

2.00

1.75

1.50
+25 +50 +75 +100 +125 +150

T

J

, JUNCTION TEMPERATURE (oC)

V

CE(ON)

, COLLECTOR-EMITTER ON VOLTAGE (V)

IC = 5A, VGE = 15V

IC = 5A, VGE = 10V

IC = 10A, VGE = 15V

IC = 10A, VGE = 10V

400

300

200

100

0
+25 +50 +75 +100 +125 +150

T

J

, JUNCTION TEMPERATURE (oC)

t

D(OFF)I

, SWITCHING TIME (ns)

IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, R

G

= 50Ω

V

GE

V

CE

I

C

E

OFF

= ∫ I

C

* V

CE

dt

800

700

600

500

400

300

200

100

0
+25 +50 +75 +100 +125 +150

T

J

, JUNCTION TEMPERATURE (oC)

t

FI

, SWITCHING TIME (ns)

IC = 5A, VGE = 10V, VCL = 300V
L = 50µH, R

G

= 50Ω

40C1/50C1

40E1/50E1

3-19

HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

FIGURE 13. TYPICAL FALL TIME (IC = 10A) FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF

SWITCHING LOSS/CYCLE

FIGURE 15. NORMALIZED SWITCHING WAVEFORMS

AT CONSTANT GATE CURRENT

Test Circuit

FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT

Typical Performance Curves

(Continued)

800

700

600

500

400

300

200

100

0
+25 +50 +75 +100 +125 +150

T

J

, JUNCTION TEMPERATURE (oC)

t

FI

, SWITCHING TIME (ns)

IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, R

G

= 50Ω

40C1/50C1

40E1/50E1

1000

900
800
700
600
500
400
300
200
100

0
+25 +50 +75 +100 +125 +150

T

J

, JUNCTION TEMPERATURE (oC)

5A, 40C1/50C1

5A, 40E1/50E1

10A, 40C1/50C1

10A, 40E1/50E1

VGE = 10V, VCL = 300V
L = 50µH, R

G

= 50Ω

W

OFF

, TURN-OFF ENERGY LOSS (µJ)

500

375

250

125

0

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)

V

GE

, GATE-EMITTER VOLTAGE (V)

10

4

0

20

I

G(REF)

I

G(ACT)

80

I

G(REF)

I

G(ACT)

TIME (µs)

GATE­EMITTER
VOLTAGE

RL = 50Ω

I

G(REF)

= 0.38mA

V

GE

= 10V

COLLECTOR-EMITTER VOLTAGE

VCC = 0.25 BV

CES

VCC = BV

CES

8

6

2

BV

CES

NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V

CE

TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.

20V

0V

R

GEN

= 100Ω

1/R

G

= 1/R

GEN

+ 1/R

GE

RGE = 100Ω

L = 50µH

V

CE(CLP)

=

RL = 13Ω

300V

V

CC

130V

3-20

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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TEL: [phone]
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TEL: [phone]
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HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

3-21