Datasheet HGTH20N50E1D, HGTH20N50C1D, HGTH20N40E1D, HGTH20N40C1D Datasheet (Intersil Corporation)
Page 1
April 1995
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
• 20A, 400V and 500V
•V
•T
CE(ON)
FALL
2.5V Max.
1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
Package
JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTH20N40C1D TO-218AC G20N40C1D
HGTH20N40E1D TO-218AC G20N40E1D
HGTH20N50C1D TO-218AC G20N50C1D
HGTH20N50E1D TO-218AC G20N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 0.8 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, T
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . I
3-76
HGTH20N40C1D
HGTH20N40E1D
CES
CGR
GE
C
CM
F25
F90
D
STG
HGTH20N50C1D
HGTH20N50E1D UNITS
400 500 V
400 500 V
±20 ±20 V
20 20 A
35 35 A
35 35 A
20 20 A
100 100 W
-55 to +150 -55 to +150
File Number 2271.4
o
C
Page 2
Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Collector Current I
Gate-Emitter Leakage Current I
Collector-Emitter On Voltage V
Gate-Emitter Plateau Voltage V
CESIC
GE(TH)VGE
CES
VCE = 400V, TC = +25oC - 250 - - µA
VCE = 500V, TC = +25oC---250µA
VCE = 400V, TC = +125oC - 1000 - - µA
VCE = 500V, TC = +125oC - - - 1000 µA
GES
CE(ON)IC
VGE = ±20V, VCE = 0 - 100 - 100 nA
IC = 35A, VGE = 20V - 3.2 - 3.2 V
GEP
IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V
LIMITS
HGTH20N40C1D,
HGTH20N40E1D
MIN MAX MIN MAX
HGTH20N50C1D,
HGTH20N50E1D
UNITS
= 1mA, VGE = 0 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
= 20A, VGE = 10V - 2.5 - 2.5 V
On-State Gate Charge Q
Turn-On Delay Time t
G(ON)IC
D(ON)IIC
= 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC
= 20A, V
CE(CLP)
= 300V,
- 50 - 50 ns
L = 25µH, TJ = +100oC,
Rise Time t
Turn-Off Delay Time t
Fall Time t
RI
D(OFF)I
FI
40E1D, 50E1D 680
40C1D, 50C1D 400
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation = W
OFF
x
W
OFFIC
Frequency)
VGE = 10V, RG = 25Ω
= 20A, V
CE(CLP)
= 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
- 50 - 50 ns
- 400 - 400 ns
(Typ)
(Typ)
1000 680
(Typ)
500 400
(Typ)
1000 ns
500 ns
40E1D, 50E1D 1810 (Typ) µJ
40C1D, 50C1D 1070 (Typ) µJ
Thermal Resistance Junction-to-Case R
Diode Forward Voltage V
Diode Reverse Recovery Time t
RR
θJC
EC
IEC = 20A -2-2V
IEC = 20A, dIEC/dt = 100A/µs - 100 - 100 ns
- 1.25 - 1.25
o
C/W
3-77
Page 3
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves
40
VGE = 10V, R
35
30
25
= RGS = 50Ω
GEN
100
80
20
15
10
, COLLECTOR CURRENT (A)
CE
I
5
0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
NORMALIZED GATE THRESHOLD VOLTAGE (V)
-50 0 +50 +100 +150
TJ, JUNCTION TEMPERATURE (oC)
60
40
20
RATED POWER DISSIPATION (%)
0 +25 +50 +75 +125 +150+100
, CASE TEMPERATURE (oC)
T
C
FIGURE 2. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
35
VCE = 10V, PULSE TEST
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX
25
20
15
10
, COLLECTOR CURRENT (A)
CE
I
5
0 2.5 5.0 7.5 10
+25oC
+125oC
-40oC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
AGE vs JUNCTION TEMPERATURE
35
VGE = 20V
30
25
20
15
10
, COLLECTOR CURRENT (A)
CE
I
= 10V
V
GE
V
= 8V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
V
GE
5
01 2 34
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
TC = +25oC
5
VGE = 10V, PULSE TEST
35
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
25
20
15
, COLLECTOR CURRENT (A)
CE
I
10
5
0123 4
V
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
CE(ON)
+25oC
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-78
Page 4
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves
(Continued)
2700
f = 0.1MHz
2250
1800
1350
CISS
900
C, CAPACITANCE (pF)
COSS
450
CRSS
01020304050
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
IC = 20A, VGE = 10V, V
L = 25µH, R
300
= 25Ω
G
CE(CLP)
= 300V
3.00
2.75
2.50
IC = 20A, VGE = 10V
IC = 20A, VGE = 15V
2.25
2.00
IC = 10A, VGE = 10V
1.75
, COLLECTOR-EMITTER VOLTAGE (V)
CE(ON)
V
1.50
+25 +50 +75 +100 +125 +150
IC = 10A, VGE = 15V
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. TYPICAL V
V
GE
vs TEMPERATURE
CE(ON)
W
= ∫ I
OFF
I
C
V
CE
* V
dt
C
CE
200
100
, TURN OFF DELAY TIME (ns)
D(OFF)I
t
0
+25 +50 +75 +100 +125 +150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
IC = 10A, VGE = 10V, V
700
L = 25µH, R
= 25Ω
G
CE(CLP)
= 300V
600
40E1D/50E1D
500
400
40C1D/50C1D
300
, FALL TIME (ns)
FI
t
200
100
0
+25 +50 +75 +100 +125 +150
, JUNCTION TEMPERATURE (oC)
T
J
800
IC = 20A, VGE = 10V, V
L = 25µH, R
700
= 25Ω
G
CE(CLP)
= 300V
600
500
40E1D/50E1D
400
300
, FALL TIME (ns)
FI
t
200
40C1D/50C1D
100
0
+25 +50 +75 +100 +125 +150
T
, JUNCTION TEMPERATURE (oC)
J
FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A)
3-79
Page 5
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves
1000
900
VGE = 10V, V
L = 25µH, R
CE(CLP)
= 25Ω
G
= 300V
(Continued)
800
700
600
500
20A, 40E1D/50E1D
20A, 40C1D/50C1D
400
10A, 40E1D/50E1D
10A, 40C1D/50C1D
, TURN-OFF ENERGY LOSS (µJ)
OFF
W
300
200
100
0
+25 +50 +75 +100 +125 +150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
100
500
375
VCC = BV
CES
GATE
EMITTER
VOLTAGE
10
8
6
250
VCC = 0.25 BV
CES
RL = 25Ω
4
IG(REF) = 0.76mA
V
125
, COLLECTOR-EMITTER VOLTAGE (V)
CE
V
0
COLLECTOR-EMITTER VOLTAGE
I
G(REF)
20
I
G(ACT)
TIME (µs)
GE
= 10V
2
I
G(REF)
80
I
G(ACT)
0
NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off
is not accurately represented by this normalization.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
TYPICAL REVERSE RECOVERY TIME
, GATE-EMITTER VOLTAGE (V)
GE
V
10
TJ = +150oC
TJ = +100oC
1.0
TJ = +25oC
TJ = -50oC
, EMITTER COLLECTOR CURRENT (A)
EC
I
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
, EMITTER-COLLECTOR VOLTAGE (V)
EC
FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR
VOLTAGE vs CURRENT
Test Circuit
1/R
= 1/R
G
20V
0V
+ 1/R
GEN
R
= 50Ω
GEN
GE
RGE = 50Ω
60
50
40
30
dIEC/dt ≥ 100A/µs
V
= 30V, TJ = +25oC
R
20
, REVERSE RECOVERY TIME (ns)
RR
10
t
02 468101214161820
IEC, EMITTER-COLLECTOR CURRENT (A)
FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME
RL = 4Ω
L = 25µH
V
CC
100V
V
=
CE(CLP)
300V
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
3-80
Page 6
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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3-81
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