Datasheet HGTH20N50C1, HGTH20N40E1, HGTH20N40C1, HGTP15N50E1, HGTP15N50C1 Datasheet (Intersil Corporation)

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

HGTP15N40C1, 40E1, 50C1, 50E1,

HGTH20N40C1, 40E1, 50C1, 50E1

15A, 20A,

400V and 500V N-Channel IGBTs

Features

• 15A and 20A, 400V and 500V

•V

CE(ON)

2.5V

•T

1µs, 0.5µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• No Anti-Parallel Diode

Applications

• Power Supplies

• Motor Drives

• Protection Circuits

Description

The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTH20N40C1 TO-218AC G20N40C1 HGTH20N40E1 TO-218AC G20N40E1 HGTH20N50C1 TO-218AC G20N50C1 HGTH20N50E1 TO-218AC G20N50E1 HGTP15N40C1 TO-220AB G15N40C1 HGTP15N40E1 TO-220AB G15N40E1 HGTP15N50C1 TO-220AB G15N50C1 HGTP15N50E1 TO-220AB G15N50E1

NOTE: When ordering, use the entire part number.

April 1995

Packages

HGTH-TYPES JEDEC TO-218AC

HGTP-TYPES JEDEC TO-220AB

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

GATE

COLLECTOR

EMITTER

COLLECTOR (FLANGE)

GATE

COLLECTOR

EMITTER

Absolute Maximum Ratings T

= +25oC, Unless Otherwise Speciﬁed

HGTH20N40C1 HGTH20N40E1

HGTH20N50C1 HGTH20N50E1

HGTP15N40C1 HGTP15N40E1

HGTP15N50C1 HGTP15N50E1 UNITS

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V

CES

400 500 400 500 V

Collector-Gate Voltage R

= 1MΩ. . . . . . . . . . . . . . . . V

CGR

400 500 400 500 V

Reverse Collector-Emitter Voltage . . . . . . . . . . . . V

CES

(rev.) -5 -5 -5 -5 V

Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20 ±20 ±20 ±20 V

Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I

20 20 15 15 A

Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I

35 35 35 35 A

Power Dissipation at T

= +25oC . . . . . . . . . . . . . . . . . . . P

100 100 75 75 W

Power Dissipation Derating T

> +25oC . . . . . . . . . . . . . . . . . 0.8 0.8 0.6 0.6 W/oC

Operating and Storage Junction Temperature Range . . . T

, T

STG

-55 to +150 -55 to +150 -55 to +150 -55 to +150

File Number 2174.3

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Speciﬁcations HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

Electrical Speciﬁcations T

= +25oC, Unless Otherwise Speciﬁed

PARAMETERS SYMBOL TEST CONDITIONS

LIMITS

UNITS

HGTH20N40C1, E1,

HGTP15N40C1, E1

HGTH20N50C1, E1,

HGTP15N50C1, E1

MIN MAX MIN MAX

Collector-Emitter Breakdown Voltage

CESIC

= 1mA, VGE = 0 400 - 500 - V

Gate Threshold Voltage V

GE(TH)VGE

= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V

Zero-Gate Voltage Collector Current

CES

VCE = 400V, TC = +25oC - 250 - - µA VCE = 500V, TC = +25oC ---250µA VCE = 400V, TC = +125oC - 1000 - - µA VCE = 500V, TC = +125oC - - - 1000 µA

Gate-Emitter Leakage Current I

GES

VGE = ±20V, VCE = 0 - 100 - 100 nA

Reverse Collector-Emitter Leakage Current

RGE = 0Ω, VEC = 5V - -5 - -5 mA

Collector-Emitter on Voltage V

CE(ON)IC

= 20A, VGE = 10V - 2.5 - 2.5 V

IC = 35A, VGE = 20V - 3.2 - 3.2 V

Gate-Emitter Plateau Voltage V

GEP

IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V

On-State Gate Charge Q

G(ON)IC

= 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC

Turn-On Delay Time t

D(ON)IIC

= 20A, V

CE(CLP)

= 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω

- 50 - 50 ns

Rise Time t

- 50 - 50 ns

Turn-Off Delay Time t

D(OFF)I

- 400 - 400 ns

Fall Time t

40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns 40C1, 50C1 400 500 400 500 ns

Turn-Off Energy Loss per Cycle (Off Switching Dissipation = W

OFF

x Frequency)

OFFIC

= 10A, V

CE(CLP)

= 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω

40E1, 50E1 1810 (Typ) µJ 40C1, 50C1 1070 (Typ) µJ

Thermal Resistance Junction-to-Case

θJC

HGTH, HGTM - 1.25 - 1.25

C/W

HGTP - 1.67 - 1.67

C/W

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

Typical Performance Curves

FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25Ω,

VGE = 0V ARE THE MIN. ALLOWABLE VALUES

FIGURE 2. POWER DISSIPA TION vs TEMPERA TURE DERA TING

CURVE

FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-

AGE vs JUNCTION TEMPERATURE

FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE

vs COLLECTOR CURRENT

-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175

, COLLECTOR CURRENT (A)

TJ, JUNCTION TEMPERATURE (oC)

VGE = 10V, R

GEN

= RGS = 50Ω

100

0 +25 +50 +75 +100 +125 +150

RATED POWER DISSIPATION (%)

TC, CASE TEMPERATURE (oC)

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-50 0 +50 +100 +150

NORMALIZED GATE THRESHOLD VOLTAGE

TC, JUNCTION TEMPERATURE (oC)

VGE = VCE, IC = 1mA

0 2.5 5.0 7.5 10.0

, COLLECTOR CURRENT (A)

VGE, GATE-TO-EMITTER VOLTAGE (V)

PULSE TEST, VCE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX.

-40oC

+25oC

+125oC

012345

, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VGE = 20V VGE = 10V

VGE = 8V

VGE = 7V

VGE = 6V

VGE = 5V

VGE = 4V

= +25oC

01234

, COLLECTOR CURRENT (A)

CE(ON)

, COLLECTOR-TO-EMITTER VOLTAGE (V)

PULSE TEST, VGE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX.

+25oC

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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER

VOLTAGE

FIGURE 8. TYPICAL V

CE(ON)

vs TEMPERATURE

FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS

FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A)

Typical Performance Curves

(Continued)

2250

1800

1350

900

450

C, CAPACITANCE (pF)

01020304050

, COLLECTOR-TO-EMITTER VOLTAGE (V)

f = 1MHz

CISS

COSS

CRSS

2700

3.00

2.75

2.50

2.25

2.00

1.75

1.50 +25 +50 +75 +100 +125 +150

, JUNCTION TEMPERATURE (oC)

CE(ON)

, COLLECTOR-EMITTER ON VOLTAGE (V)

IC = 10A, VGE = 15V

IC = 10A, VGE = 10V

IC = 20A, VGE = 15V

IC = 20A, VGE = 10V

400

300

200

100

+25 +50 +75 +100 +125 +150

, JUNCTION TEMPERATURE (oC)

D(OFF)I

, SWITCHING TIME (ns)

IC = 20A, VGE = 10V, VCL = 300V L = 25µH, R

= 25Ω

OFF

= ∫ I

* V

800

700

600

500

400

300

200

100

0 +25 +50 +75 +100 +125 +150

, JUNCTION TEMPERATURE (oC)

, SWITCHING TIME (ns)

IC = 10A, VGE = 10V, VCL = 300V L = 25µH, R

= 25Ω

40C1/50C1

40E1/50E1

800

700

600

500

400

300

200

100

0 +25 +50 +75 +100 +125 +150

, JUNCTION TEMPERATURE (oC)

, SWITCHING TIME (ns)

IC = 20A, VGE = 10V, VCL = 300V L = 25µH, R

= 25Ω

40C1/50C1

40E1/50E1

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240

EUROPE

Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05

ASIA

Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029

HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF

SWITCHING LOSS/CYCLE

FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-

STANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260 ON THE USE OF NORMALIZED SWITCHING WAVEFORMS)

Test Circuit

FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT

Typical Performance Curves

(Continued)

1000

900 800 700 600 500 400 300 200 100

0 +25 +50 +75 +100 +125 +150

OFF

, TURN-OFF ENERGY LOSS (µJ)

TJ, JUNCTION TEMPERATURE (oC)

10A, 40C1/50C1

10A, 40E1/50E1

20A, 40C1/50C1

20A, 40E1/50E1

VGE = 10V, V

CE(CLP)

= 300V

L = 25µH, R

= 25Ω

500

375

250

125

, COLLECTOR-EMITTER VOLTAGE (V)

, GATE-EMITTER VOLTAGE (V)

G(REF)

G(ACT)

G(REF)

G(ACT)

TIME (µs)

GATEEMITTER VOLTAGE

RL = 25Ω

G(REF)

= 0.76mA

= 10V

COLLECTOR-EMITTER VOLTAGE

VCC = 0.25BV

CES

VCC = BV

CES

NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. V

TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION.

20V

GEN

= 50Ω

1/R

= 1/R

GEN

+ 1/R

RGE = 50Ω

L = 25µH

CE(CLP)

RL = 4Ω

300V

80V