Datasheet HGTP7N60A4, HGTG7N60A4, HGT1S7N60A4S Datasheet (Fairchild Semiconductor)

HGT1S7N60A4S9A, HGTG7N60A4

Data Sheet August 2003

HGTP7N60A4

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N6 0A4 and HGTP7N 60A4
are MOS gated high voltage switching devices combining
the best fe atures of MOSFETs and bipolar t ransistors . These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.

PART NUMBER PACKAGE BRAND

HGT1S7N60A4S9A TO-263AB 7N60A4
HGTG7N60A4 TO-247 7N60A4
HGTP7N60A4 TO-220AB 7N60A4

NOTE: When ordering, use the entire part number.

o

C and 150oC.

Features

• >100kHz Operation at 390V, 7A

• 200kHz Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time

. . . . . . . . . . . . . . . . . . . 75ns at T

• Low Conduction Loss

SymbolOrdering Information

G

= 125oC

J

C

E

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

E

C

G

E
C
G

COLLECTOR

COLLECTOR

(BOTTOM SIDE METAL)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-263AB

G

E

(FLANGE)

COLLECTOR
(FLANGE)

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (N o t e 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Single Pulse Avalanche Energy at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V

J

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

C

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

AS

D

, T

J

STG

Maximum Lead T emperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Device M aximum Ratings” m ay cause permanent da mage to the device. This is a stress only rating and operation of th e
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

34 A
14 A
56 A

±20 V
±30 V

25mJ at 7A

125 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Pulsed Avalanche Energy E
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

AS

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2mA

J

= 7A,

V

GE

= 15V

T

= 25oC-1.92.7V

J

T

= 125oC-1.62.2V

J

IC = 250µA, VCE = 600V 4.5 5.9 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 25Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

35 - - A

ICE = 7A, L = 500µH25--mJ
IC = 7A, VCE = 300V - 9. 0 - V
IC = 7A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC
I

= 7A

CE

= 390V

V

CE

= 15V

V

GE

R

= 25Ω

G

L = 1mH
Test Circuit (Figure 20)

V

= 15V - 37 45 nC

GE

V

= 20V - 48 60 nC

GE

-11- ns

-11- ns

- 100 - ns

-45- ns

-55- µJ

- 120 150 µJ

-6075µJ

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC

= 7A

I

CE

= 390V

V

CE

V

= 15V

GE

= 25Ω

R

G

L = 1mH
Test Circuit (Figure 20)

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

35

30

25

V

= 15V

GE

40

TJ = 150oC, RG = 25Ω, V

30

-10- ns

-7-ns

- 130 150 ns

-7585ns

-50- µJ

- 200 215 µJ

- 125 170 µJ

--1.0oC/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 100µH

GE

ON2

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

200

100

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

P

= CONDUCTION DISSIPATION

C

, OPERATING FREQUENCY (kHz)

MAX

f

30

(DUTY FACTOR = 50%)

R

= 1.0oC/W, SEE NOTES

ØJC

TJ = 125oC, RG = 25Ω, L = 2mH, V

1

d(OFF)I

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

ON2

+ t

d(ON)I

+ E

OFF

)

)

= 390V

CE

TCV

o

75

C

15V

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

GE

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

s)

µ

14

12

10

8

6

20510

, SHORT CIRCUIT WITHSTAND TIME (

4

SC

t

10

VCE = 390V, RG = 25Ω, TJ = 125oC

I

SC

t

SC

11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

13 14

14016

120

100

80

60

40

20

, PEAK SHORT CIRCUIT CURRENT (A )

SC

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

30

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECT O R TO EMITTER CURRENT (A)

CE

I

0

01.0

TJ = 150oC

0.5 2.5
, COLLECTOR TO EMITTER VOLTA GE (V)

V

CE

= 12V

GE

TJ = 125oC

TJ = 25oC

1.5 2.0 3.0

30

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0 1.0 1.5 2.0 3.00.5 2.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 125oC

TJ = 150oC TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

500

RG = 25Ω, L = 1mH, VCE = 390V

400

TJ = 125oC, VGE = 12V, VGE = 15V

300

200

, TURN-ON ENERGY LOSS (µJ)

100

ON2

E

0

0

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V, VGE = 15V

42 6 8 101214

350

RG = 25Ω, L = 1mH, VCE = 390V

300

250

200

TJ = 125oC, VGE = 12V OR 15V

150

100

, TURN-OFF ENERGY LOSS (µJ)

50

OFF

E

0

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V OR 15V

42 6 8 1012140

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

16

RG = 25Ω, L = 1mH, VCE = 390V

TJ = 25oC, VGE = 12V

14

12

10

, TURN-ON DELAY TIME (ns)

d(ON)I

t

8

ICE, COLLECTOR TO EMITTER CURRENT (A)

42681012140

TJ = 125oC, VGE = 12V

TJ = 25oC, VGE = 15V

TJ = 125oC, VGE = 15V

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR T O

EMITTER CURRENT

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR T O

EMITTER CURRENT

40

RG = 25Ω, L = 1mH, VCE = 390V

30

20

, RISE TIME (ns)

rI

t

10

0

TJ = 25oC, V

42681012140

ICE, COLLECTOR TO EMITTER CURRENT (A)

= 12V, V

GE

TJ = 125oC, V

GE

= 15V

GE

= 12V, V

GE

= 15V

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

180

160

140

120

100

, TURN-OFF DELAY TIME (ns)

80

d(OFF)I

t

60

RG = 25Ω, L = 1mH,

42681012140

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

= 390V

V

CE

VGE = 15V, TJ = 125oC

VGE = 12V, TJ = 125oC

VGE = 15V, TJ = 25oC

VGE = 12V, TJ = 25oC

FIGURE 11. TURN-OFF DELA Y TIME vs COLLECT OR T O

EMITTER CURRENT

120

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

100

80

60

40

= 10V

CE

TJ = 25oC

TJ = 125oC TJ = -55oC

90

RG = 25Ω, L = 1mH, VCE = 390V

80

70

60

50

, FALL TIME (ns)

fI

t

40

30

20

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

42 6 8 1012140

FIGURE 12. FALL TIME vs COLL ECT OR T O EMITTER

CURRENT

15

I

= 1mA, RL = 43Ω, TJ = 25oC

G(REF)

12

9

6

VCE = 600V

VCE = 400V

VCE = 200V

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

7

8 9 11 12 15

, GATE TO EMITTER VOLTAGE (V)

V

GE

1310

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

800

RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V

E

= E

TOTAL

600

400

200

, TOTAL SWITCHING ENERGY LOSS (µJ)

0

TOTAL

E

+ E

ON2

OFF

ICE = 14A

ICE = 7A

ICE = 3.5A

50 75 100

, CASE TEMPERATURE (oC)

T

C

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE

14

12525 150

3

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

, TOTAL SWITCHING ENERGY LOSS (mJ)

0.1

TOTAL

E

5101520 3025 35 400

QG, GATE CHARGE (nC)

10

TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V

E

= E

TOTAL

1

10 1000

+ E

ON2

OFF

ICE = 14A

ICE = 7A

ICE = 3.5A

, GATE RESISTANCE (Ω)

R

G

100

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

1.4
FREQUENCY = 1MHz

1.2

1.0

0.8

0.6

0.4

C, CAPACITANCE (nF)

0.2

0

0 20406080100

C

IES

C

OES

C

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPA CITANCE vs COLLECTOR T O EMITTER

VOLTAGE

0

10

0.5

2.8

2.6

2.4

2.2

2.0

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

1.8

V

9

10 12

11 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURA TION = 250µs,

ICE = 14A

ICE = 7A

ICE = 3.5A

FIGURE 18. COLLECTOR T O EMITTER ON-STATE V OLTA GE

vs GATE TO EMITTER VOLTAGE

0.2

0.1

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE
Z

θJC

-2

10

-5

10

SINGLE PULSE

-4

10

FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

RHRP660

L = 1mH

RG = 25Ω

-3

10

t1, RECTANGULAR PULSE DURATION (s)

+

-

VDD = 390V

10

t

1

P

D

t

2

DUTY FACTOR, D = t1 / t
PEAK TJ = (PD X Z

-2

V

GE

V

CE

I

CE

-1

10

90%

t

d(OFF)I

10%

10

90%

E

OFF

t

fI

2

X R

10%

θJC

t

d(ON)I

t

) + T

rI

C

1

10

θJC

0

E

ON2

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being ex tensively
used in production b y nume rous equipme nt manuf acturers i n
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly int o a circ uit, al l lead s sho uld be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.

2. When device s are remov ed b y hand from thei r carriers,
the hand being used should be grounde d b y any su itab le
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices sho uld n e ver be inserted into or removed from
circuits with power on.

5. Gate V olta ge Rating - Nev er e xceed the gate-v oltag e
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termin ation - The gates of thes e de vices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.

7. Gate Protection - These de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information s hown f or a ty pical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the deno minator) ha s been a rbitra rily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T

f

is defined by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD = (TJM - TC)/R

D

The sum of device switching and conduction lo sses must
not exceed P
the conduction losse s (P
P

=(VCEx ICE)/2.

C

E

and E

ON2

shown in Figure 21. E

. A 50% duty factor was used (Figure 3) and

D

are defined in the switching waveforms

OFF

) are approximated by

C

is the integral of the

ON2

instantaneous power loss (I
E

is the integral of the instantan eou s power loss

OFF

(I

CExVCE

calculation for E
(I

CE

) during turn-off. All tail losses are incl ude d in the

; i.e., the collector current equals zero

OFF

= 0).

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are defined in Figure 21.

.

JM

+ E

OFF

x VCE) during turn-on and

CE

ON2

). The

θJC

.

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

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TINYOPTO™
TruTranslation™
UHC™
UltraFET

®

VCX™

®

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.

As used herein:

1. Life support devices or systems are devices or syst em s
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5