Datasheet HGTG20N60B3D Datasheet (Intersil Corporation)

HGTG20N60B3D

Data Sheet January 2000

40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25

o

150

C. The diode used in anti-parallel with the IGBT is the

o

C and

RHRP3060.
The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low
conduction losses are essential.

Formerly developmental type TA49016.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60B3D TO-247 G20N60B3D

NOTE: When ordering, use the entire part number.

File Number 3739.6

Features

• 40A, 600V at TC = 25oC

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150

• Short Circuit Rated

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR
(BOTTOM SIDE METAL)

o

C

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG20N60B3D

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG20N60B3D UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(AVG)

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CES

CGR

C25

C110

CM

GES

GEM

600 V
600 V

40 A
20 A
20 A

160 A

±20 V
±30 V

Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

165 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L
SC
SC

-40 to 150
260

4 µs

10 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. VCE = 360V, TC = 125oC, RG = 25Ω.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)

GE(TH)

GES

Switching SOA SSOA TC = 150oC

IC = I
VGE = 15V

IC = 250µA, VCE = V

C110

,

TC = 25oC - 1.8 2.0 V
TC = 150oC - 2.1 2.5 V

GE

3.0 5.0 6.0 V

VGE = ±20V - - ±100 nA

VCE= 480V 100 - - A

VGE= 15V,

VCE= 600V 30 - - A

RG = 10Ω,

L = 45µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

GEP

G(ON)

rI

fI

ON

OFF

EC

rr

IC = I

IC = I

VCE = 0.5 BV

TC = 150oC,

ICE = I

VCE = 0.8 BV

VGE = 15V

RG = 10Ω,

L = 100µH

, VCE = 0.5 BV

C110

,

C110

C110

CES

- 8.0 - V

VGE = 15V - 80 105 nC

CES

VGE = 20V - 105 135 nC

-25-ns

-20-ns

CES,

- 220 275 ns

- 140 175 ns

- 475 - µJ

- 1050 - µJ
IEC = 20A - 1.5 1.9 V
IEC= 20A, dIEC/dt = 100A/µs--55ns
IEC = 1A, dIEC/dt = 100A/µs--45ns

Thermal Resistance R

θJC

IGBT - - 0.76
Diode - - 1.2

o
o

C/W
C/W

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integralof the instantaneouspower loss starting at the trailing edge of the input pulseand ending

OFF

at the point where the collector current equals zero (ICE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power DeviceTurn-Off Switching Loss. This test method producesthe true total Turn-OffEnergy Loss. Turn-Onlosses include
diode losses.

2

Typical Performance Curves

HGTG20N60B3D

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

80

TC = 150oC

60

TC = 25oC

40

TC = -40oC

TC = -40oC

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

46810

, GATE TO EMITTER VOLTAGE (V)

V

GE

CE

= 10V

12

100

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0246810

VGE = 15V

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

12V

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, T

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

50

40

VGE = 15V

30

20

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

80

60

TC = -40oC

40

VGE = 10V

= 9V

V

GE

V

= 8.5V

GE

= 8.0V

V

GE

VGE = 7.5V
VGE = 7.0V

= 25oC

C

TC = 25oC

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 50

75

TC, CASE TEMPERATURE (oC)

100 125 150

FIGURE 3. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

5000

C

4000

3000

2000

C, CAPACITANCE (pF)

1000

IES

C

OES

C

RES

0

0 5 10 15 20 25

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

FREQUENCY = 1MHz

FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TC = 150oC

FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

600

480

360

240

120

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

0

V

02040

VCE = 600V

Q

G

VCE = 400V

VCE = 200V

T

C

I

g(REF)

R

, GATE CHARGE (nC)

= 25oC

= 30Ω

L

= 1.685mA

80 10060

15

12

9

6

3

0

FIGURE 6. GATE CHARGE WAVEFORMS

, GATE TO EMITTER VOLTAGE (V)

GE

V

3

Typical Performance Curves (Continued)

HGTG20N60B3D

100

TJ = 150oC, RG = 10Ω, L = 100µH

50
40

30

VCE= 480V, VGE = 15V

20

, TURN-ON DELAY TIME (ns)

d(ON)I

t

10

010203040

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

100

TJ = 150oC, RG = 10Ω, L = 100µH

VCE = 480V, VGE = 15V

10

500

TJ = 150oC, RG = 10Ω, L = 100µH

400

300

VCE = 480V, VGE = 15V

200

, TURN-OFF DELAY TIME (ns)

d(OFF)I

t

100

010 203040

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

1000

TJ = 150oC, RG = 10Ω, L = 100µH

100

VCE = 480V, VGE = 15V

, TURN-ON RISE TIME (ns)

rI

t

1

010203040

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

1400

TJ = 150oC, RG = 10Ω, L = 100µH

1200

1000

800

600

400

, TURN-ON ENERGY LOSS (µJ)

200

ON

E

0

010203040

VCE = 480V, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

, FALL TIME (ns)

fI

t

10

010203040

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO

EMITTER CURRENT

2500

TJ = 150oC, RG = 10Ω, L = 100µH

2000

1500

1000

500

, TURN-OFF ENERGY LOSS (µJ)

OFF

E

0

010 203040

VCE = 480V, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

4

FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

Typical Performance Curves (Continued)

500

TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10Ω, L = 100mH

VCE = 480V

100

f

= 0.05/(t

MAX1

f

=(PD - PC)/(EON +E

MAX2

PD = ALLOWABLE DISSIPATION

= CONDUCTION DISSIPATION

P

, OPERATING FREQUENCY (kHz)

MAX

f

C

(DUTY FACTOR = 50%)

R

= 0.76oC/W

θJC

10

510203040

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

d(ON)I

OFF

)

)

HGTG20N60B3D

120

100

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

TC = 150oC, VGE = 15V, RG = 10Ω

80

60

40

20

0

100 200 300 400 500 600 7000

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

FIGURE 13. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

RESPONSE

-2

10

, NORMALIZED THERMAL

JC

θ

Z

10

-3

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

100

80

60

40

, FORWARD CURRENT (A)

20

EC

I

150

o

25oC

C

o

100

C

-2

10

FIGURE 14. SWITCHING SAFE OPERATING AREA

t

1

P

D

t

2

-1

10

50

TC = 25oC, dIEC/dt = 100A/µs

t

40

rr

30

t

a

20

t

b

, RECOVERY TIMES (ns)

r

t

10

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

10

2

X R

JC

θ

0

JC

θ

) + T

C

1

10

0

0 0.5 1.0 1.5 2.0 2.5

VEC, FORWARD VOLTAGE (V)

FIGURE 16. DIODE FORWARDCURRENT vs FORWARD

VOLTAGE DROP

5

0

110205

IEC, FORWARD CURRENT (A)

FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT

Test Circuit and Waveform

HGTG20N60B3D

L = 100µH

RHRP3060

RG = 10Ω

+

= 480V

V

DD

-

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these de vices ,
care should be exercisedto assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and discharge procedures,
howev er, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the follo wing basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.

2. When devicesare removedby hand fromtheircarriers, the
hand being used should be grounded by any suitable
means - for example , with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from
circuits with power on.

5. Gate V olta geRating - Never exceed the gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are
essentially capacitors.Circuits that leavethe gate open­circuitedor floating should beavoided.Theseconditions
can result in turn-on of the devicedue to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. Gate Protection- These devices donot havean internal
monolithic zener diode from gate to emitter. If gate

. Exceeding the rated VGE can result in

GEM

V

GE

V

CE

90%

I

CE

t

d(OFF)I

10%

Operating Frequency Information

Operating frequency information for a typical device(Figure 13)
is presented as a guide for estimating device performance
fora specific application. Other typical frequency vs collector
current (I
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
f

MAX2

based on measurements of a typical device and is bounded
by the maximum rated junction temperature.

f

MAX1

Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. t

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

MAX2

allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
and the conduction losses (P
P

=(VCE x ICE)/2.

C

EON and E
shown in Figure 19. E
power loss (I
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E
collector current equals zero (I

) plots are possible using the information shown

CE

whichever is smaller at each point. The information is

is defined by f

is defined by f

OFF

CE

MAX1

and t

d(OFF)I

MAX2

D

. A 50% duty factor was used (Figure 13)

D

are defined in the switching waveforms

ON

x VCE) during turn-on and E

90%

t

fI

= 0.05/(t

d(ON)I

E

E

OFF

ON

d(OFF)I td(ON)I

are defined in Figure 19.

= (PD - PC)/(E

) is defined by PD=(TJM-TC)/R

) are approximated by

C

is the integral of the instantaneous

= 0).

CE

protection is required an external zener is recommended.

10%

t

rI

t

d(ON)I

+ EON). The

OFF

OFF

OFF

).

. t

JM

is the

; i.e. the

MAX1

d(OFF)I

θJC

or

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

6

ECCOSORBD is a Trademark of Emerson and Cumming, Inc.