Datasheet HGTP20N60B3, HGTG20N60B3, HGT1S20N60B3S Datasheet (Intersil Corporation)

HGT1S20N60B3S, HGTP20N60B3,

HGTG20N60B3

Data Sheet January 2000

40A, 600V, UFS Series N-Channel IGBTs

The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49050.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP20N60B3 TO-220AB G20N60B3

File Number 3723.6

Features

• 40A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150

• Short Circuit Rated

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Packaging

JEDEC TO-263AB

G

E

COLLECTOR
(FLANGE)

o

C

HGT1S20N60B3S TO-263AB G20N60B3
HGTG20N60B3 TO-247 HG20N60B3

NOTE: Whenordering, use the entire part number.Addthesuffix9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-220AB (ALTERNATE VERSION)

E

C

COLLECTOR
(FLANGE)

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(FLANGE)

G

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGT1S20N60B3S

HGTP20N60B3
HGTG20N60B3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

CGR

600 V
600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

40 A
20 A

160 A

±20 V
±30 V

Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

165 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

-40 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

4 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. VCE = 360V, TC = 125oC, RG = 25Ω.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

CE(SAT)IC

= I

, VGE = 15V TC = 25oC - 1.8 2.0 V

C110

TC = 150oC - 2.1 2.5 V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)

GES

Switching SOA SSOA TC = 150oC, VGE=

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

θJC

IC = 250µA, VCE = V

GE

3.0 5.0 6.0 V

VGE = ±20V - - ±100 nA

VCE= 480V 100 - - A

15V, RG = 10Ω, L =
45µH

IC = I
IC = I

VCE = 0.5 BV

, VCE = 0.5 BV

C110

,

C110

CES

TC = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 10Ω
L = 100µH

VCE= 600V 30 - - A

CES

- 8.0 - V
VGE = 15V - 80 105 nC
VGE = 20V - 105 135 nC

-25-ns

-20-ns

- 220 275 ns

- 140 175 ns

- 475 - µJ

- 1050 - µJ

- - 0.76

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting atthe trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE = 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn­Off Energy Loss. Turn-On losses include diode losses.

o

C/W

2

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3

Typical Performance Curves

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

80

TC = 150oC

60

TC = 25oC

40

TC = -40oC

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

46810

VGE, GATE TO EMITTER VOLTAGE (V)

CE

= 10V

12

100

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0246810

VGE = 15V

TC = 25oC

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

12V

PULSE DURATION = 250µs
DUTY CYCLE <0.5%

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

50

40

VGE = 15V

30

20

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 50

75

TC, CASE TEMPERATURE (oC)

100 125 150

FIGURE 3. DC COLLECTOR CURRENT vs CASE

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

80

60

TC = -40oC

40

TC = 150oC

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

TEMPERATURE

V

= 10V

GE

= 9V

V

GE

= 8.5V

V

GE

VGE = 8.0V

VGE = 7.5V

VGE = 7.0V

TC = 25oC

5000

C

4000

3000

2000

C, CAPACITANCE (pF)

1000

IES

C

OES

C

RES

0

0 5 10 15 20 25

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

FREQUENCY = 1MHz

FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

3

600

480

360

240

120

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

0

V

02040

VCE = 600V

VCE = 200V

, GATE CHARGE (nC)

Q

G

FIGURE 6. GATE CHARGE WAVEFORMS

VCE = 400V

T

C

I

g(REF)

R

= 30Ω

L

= 25oC

= 1.685mA

80

15

12

9

6

3

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

10060

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3

Typical Performance Curves (Continued)

100

TJ = 150oC, RG = 10Ω, L = 100µH

50
40

30

20

, TURN-ON DELAY TIME (ns)

d(ON)I

t

10

010203040

VCE = 480V, VGE = 15V

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

100

TJ = 150oC, RG = 10Ω, L = 100µH

VCE = 480V, VGE = 15V

500

TJ = 150oC, RG = 10Ω, L = 100µH

400

300

200

, TURN-OFF DELAY TIME (ns)

d(OFF)I

t

100

VCE = 480V, VGE = 15V

0

10 20 30 40

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

1000

TJ = 150oC, RG = 10Ω, L = 100µH

VCE = 480V, VGE = 15V

10

, TURN-ON RISE TIME (ns)

rI

t

1

010203040

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

1400

TJ = 150oC, RG = 10Ω, L = 100µH

1200

1000

800

600

400

, TURN-ON ENERGY LOSS (µJ)

200

ON

E

0

010203040

VCE= 480V, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

, FALL TIME (ns)

fI

t

10

010203040

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO

EMITTER CURRENT

2500

TJ = 150oC, RG = 10Ω, L = 100µH

2000

1500

1000

500

, TURN-OFF ENERGY LOSS (µJ)

OFF

E

0

010203040

VCE = 480V, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

4

FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3

Typical Performance Curves (Continued)

500

TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10Ω, L = 100µH

VCE = 480V

100

= 0.05/(t

f

MAX1

f

= (PD - PC)/(EON + E

MAX2

= ALLOWABLE DISSIPATION

P

D

P

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

f

C

(DUTY FACTOR = 50%)

= 0.76oC/W

R

θJC

10

510203040

d(OFF)I

+ t

d(ON)I

OFF

)

)

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

120

TC = 150oC, VGE = 15V, RG = 10Ω

100

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

100 200 300 400 500 600 7000

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

FIGURE 14. SWITCHING SAFE OPERATING AREA

0.01

-2

10

SINGLE PULSE

, NORMALIZED THERMAL RESPONSE

θJC

Z

-3

10

-5

10

-4

10

FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveform

L = 100µH

RHRP3060

RG = 10Ω

t

1

P

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-3

10

-2

10

θJC

X R

2

) + T

θJC

-1

10

D

C

t

2

0

10

1

10

t1, RECTANGULAR PULSE DURATION (s)

90%

V

GE

E

OFF

V

CE

+

= 480V

V

DD

-

I

CE

90%

t

d(OFF)I

10%

t

fI

10%

E

ON

t

rI

t

d(ON)I

FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 17. SWITCHING TEST WAVEFORMS

5

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturersin
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions
are taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBDLD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devicesshould never be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating - Neverexceedthe gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open­circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. GateProtection - These devicesdo not haveaninternal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical de vice
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.

f

is defined by f

MAX1

MAX1

Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceed P

. A 50% duty factor was used (Figure 13)

D

and the conduction losses (P
P

=(VCExICE)/2.

C

EON and E
shown in Figure 17. E
power loss (I

are defined in the switching waveforms

OFF

x VCE) during turn-on and E

CE

is the integral of the instantaneous

ON

integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E

; i.e., the collector current equals zero (ICE = 0).

OFF

) plots are possible using

CE

whichever is smaller at each

= 0.05/(t

d(ON)I

d(OFF)I

are defined in Figure 17.

) are approximated by

C

+ t

d(ON)I

+ EON). The

OFF

OFF

x VCE) during

CE

JM

is the

).

. t

d(OFF)I

θJC

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

6

ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.