Datasheet HGTG20N60A4D Datasheet (Fairchild Semiconductor)

HGTG20N60A4D, HGT4E20N60A4DS

Data Sheet APRIL 2002

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

This family of MOS gat ed high voltage switching devices combine the best f eatures of MOSFETs and bipolar transist ors. These devices hav e the high input i m pedance of a MOSFET and the low on-st ate conduction l oss of a bipolar transist or. The much lower on-state voltage drop v ari es only moderately bet ween 25

o

C and 150oC. Th e IGBT used is the dev elopment type TA49339. The diode used in anti-parallel is the development type TA49372.

These IGBT’s are ideal for many high volt age switching applications operating at high frequencies where low conduction losses are essential. These devices have been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49341.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60A4D TO-247 20N60A4D HGT4E20N60A4DS TO-268 20N60A4DS

NOTE: When ordering, use the entire part number.

Features

• >100kHz Opera ti on At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SO A Capability

• Typical Fall Ti m e . . . . . . . . . . . . . . . . .55ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model www.fairchildsemi.com

Packaging

JEDEC STYLE TO-247

E

C

G

TO-268AA

= 125oC

J

Symbol

C

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

E

HGTG20N60A4D, HGT4E20N60A4DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG20N60A4D,

HGT4E20N60A4DS UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

At T

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T Power Dissipation Total at T Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Rati ngs” may cause permane nt damage to the device. This is a stress only rating and oper ation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

C25

C110

CM

GES

GEM

D

, T

J

STG

L

70 A 40 A

280 A

±20 V ±30 V

290 W

-55 to 150 260

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakag e C urrent I

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fal l Tim e t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fal l Tim e t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI ON1 ON2

OFF

d(ON)I

rI

d(OFF)I

fI ON1 ON2

OFF

IC = 250µA, VGE = 0V 600 - - V VCE = 600V TJ = 25oC--250µA

= 125oC--3.0mA

T

J

= 20A,

V

GE

= 15V

= 25oC-1.82.7V

T

J

= 125oC-1.62.0V

T

J

IC = 250µA, VCE = 600V 4.5 5.5 7.0 V VGE = ±20V - - ±250 nA

= 150oC, RG = 3Ω, VGE = 15V,

J

L = 100µH, V

= 600V

CE

100 - - A

IC = 20A, VCE = 300V - 8.6 - V IC = 20A,

V

= 300V

CE

IGBT and D io de at TJ = 25oC, I

= 20A,

CE

V

= 390V,

CE

V

= 15V,

GE

R

= 3Ω,

G

L = 500µH, Test Circuit Figure 24

= 15V - 142 162 nC

V

GE

= 20V - 182 210 nC

V

GE

-15- ns

-12- ns

-73- ns

-32- ns

-105- µJ

- 280 350 µJ

- 150 200 µJ

IGBT and D io de at TJ = 125oC, I

= 20A,

CE

V

= 390V, VGE = 15V,

CE

R

= 3Ω,

G

L = 500µH, Test Circuit Figure 24

-1521ns

-1318ns

- 105 135 ns

-5573ns

-115- µJ

- 510 600 µJ

- 330 500 µJ

HGTG20N60A4D, HGT4E20N60A4DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

EC

rr

θJC

IEC = 20A - 2.3 - V IEC = 20A, dIEC/dt = 200A/µs-35-ns

= 1A, dIEC/dt = 200A/µs-26-ns

I

EC

IGBT - - 0.43 Diode - - 1.9

NOTE:

2. Turn-Off Energy Loss (E at the point where the collector current equals zero (I of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

) is define d as the integr al of the i nsta ntaneo us pow er loss st arti ng at the tr aili ng edge of the inp ut pul se and en ding

OFF

= 0A). Al l d ev ic es we r e tes t ed per J E DEC S t anda r d No . 2 4-1 Met hod fo r Mea su r eme nt

CE

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E is the turn-on loss when a typ ical diode is used i n the test circuit and the diod e is at the sa me T Figure 20.

Typical Performance Curves Unless Otherwise Specified

100

80

PACKAGE LIMIT

60

DIE CAPABILITY

V

= 15V

GE

120

TJ = 150oC, RG = 3Ω, V

100

80

o

C/W

o

C/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The di ode type is speci fied in

J

= 15V, L = 100µH

GE

ON2

40

20

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECT OR CURRENT vs CASE

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

100

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)

, OPERATING FREQUENCY (kHz)

R

= 0.43oC/W, SEE NOTES

ØJC

MAX

f

TJ = 125oC, RG = 3Ω, L = 500µH, V

40

5

I

d(OFF)I

, COLLECTOR TO EMITTER CURRENT (A)

CE

+ t

ON2

d(ON)I

+ E

OFF

)

= 390V

CE

TCV

75

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLT AGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

GE

o

C

15V

5010 20

4030

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

10 11 12 15

VCE = 390V, RG = 3Ω, TJ = 125oC

I

SC

t

SC

13 14

VGE, GATE TO EMITTER VOLTAGE (V)

45014

400

350

300

250

200

150

100

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

HGTG20N60A4D, HGT4E20N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

100

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0.4 2.4 2.8

00.81.2 V

TJ = 125oC

TJ = 150oC

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 12V

GE

TJ = 25oC

1.6 2.0 3.2

100

DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs

80

60

40

TJ = 125oC

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0 0.8 1.2 1.6 2.00.4 2.4 2.8

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 150oC

TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

1400

RG = 3Ω, L = 500µH, VCE = 390V

1200

1000

TJ = 125oC, VGE = 12V, VGE = 15V

800

600

400

, TURN-ON ENERGY LOSS (µJ)

200

ON2

E

0

5

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V, VGE = 15V

1510 20 25 30 35 40

800

RG = 3Ω, L = 500µH, VCE = 390V

700

600

500

TJ = 125oC, VGE = 12V OR 15V

400

300

200

, TURN-OFF ENERGY LOSS (µJ)

100

OFF

E

0

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, VGE = 12V OR 15V

1510 20 25 30 35 405

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR T O

EMITTER CURRENT

22

RG = 3Ω, L = 500µH, VCE = 390V

20

TJ = 25oC, TJ = 125oC, VGE = 12V

18

16

14

12

, TURN-ON DELAY TIME (ns)

10

d(ON)I

t

8

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 15V

1510 20 25 30 35 405

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O

EMITTER CURRENT

36

RG = 3Ω, L = 500µH, VCE = 390V

32

28

24

20

16

,RISE TIME(ns)

rI

t

12

8

4

TJ = 25oC, TJ = 125oC, V

TJ = 25oC OR TJ = 125oC, V

1510 20 25 30 35 405

ICE, COLLECTOR TO EMITTER CURRENT (A)

GE

= 12V

GE

= 15V

FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O

EMITTER CURRENT

HGTG20N60A4D, HGT4E20N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

120

110

100

90

80

, TURN-OFF DELAY TIME (ns)

70

d(OFF)I

t

60

RG = 3Ω, L = 500µH,

VGE = 12V, VGE = 15V, TJ = 125oC

VGE = 12V, VGE = 15V, TJ = 25oC

1510 20 25 30 35 405

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

V

CE

= 390V

FIGURE 11. TURN-OFF DELAY TIME vs COLLECT OR T O

EMITTER CURRENT

240

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

200

160

120

80

40

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

6

78910 12

TJ = 125oC

, GATE TO EMITTER VOLTAGE (V)

V

GE

= 10V

CE

TJ = 25oC

TJ = -55oC

11

80

RG = 3Ω, L = 500µH, VCE = 390V

72

64

56

48

40

, FALL TIME (ns)

fI

t

32

24

16

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

1510 20 25 30 35 405

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 12. FALL TIME vs COLLECTOR T O EMITTER

CURRENT

16

I

= 1mA, RL = 15Ω, TJ = 25oC

I

= 1mA, RL = 15Ω, TJ = 25oC

G(REF)

14

12

10

, GATE TO EMITTER VOLTAGE (V)

GE

V

8

6

4

2

0

VCE = 600V

VCE = 200V

20 40 60 80 120100 140 1600

= 400V

V

CE

QG, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

1.8 RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V

1.6

E

= E

TOTAL

1.4

1.2

1.0

0.8

0.6

0.4

0.2

, TOTAL SWITCHING ENERGY LOSS (mJ)

0

TOTAL

E

+ E

ON2

OFF

ICE = 30A

ICE = 20A

ICE = 10A

50 75 100

T

, CASE TEMPERATURE (oC)

C

FIGURE 15. TOT AL SWITCHING LOSS vs CASE

12525 150

FIGURE 16. TOT AL SWITCHI NG LOSS vs GATE RESISTANCE

TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V

E

= E

TOTAL

10

1

, TOTAL SWITCHING ENERGY LOSS (mJ)

0.1

TOTAL

3 1000

E

+ E

ON2

OFF

ICE = 30A

ICE = 20A

ICE = 10A

10 100

R

, GATE RESISTANCE (Ω)

G

TEMPERATURE

HGTG20N60A4D, HGT4E20N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

5

FREQUENCY = 1MHz

4

3

2

C, CAPACITANCE (nF)

1

0

0 20406080100

C

IES

C

OES

C

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACI TANCE vs COLLECTOR TO EMITTER

VOLTAGE

30

DUTY CYCLE < 0.5%, PULSE DURATION = 250µs

25

20

15

10

, FORWARD CURRENT (A)

EC

5

I

0

02.0

0.5 1.0 1.5 2.5 3.0 VEC, FORWARD VOLTAGE (V)

125

o

C

25oC

2.2

2.1

2.0

1.9

1.8

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

1.7

V

89

VGE, GATE TO EMITTER VOLTAGE (V)

10 12

DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs

ICE = 30A

ICE = 20A

ICE = 10A

11 13 14 15 16

FIGURE 18. COLLECTOR TO EMITTER ON-STA TE VOL T A GE

vs GATE TO EMITTER VOLTAGE

90

dIEC/dt = 200A/µs

80 70 60 50 40 30

, RECOVERY TIMES (ns)

20

rr

t

10

0

4 8 16 20

IEC, FORWARD CURRENT (A)

125oC t

b

12

125oC t

rr

125oC t

25oC t

a

rr

a

b

FIGURE 19. DIODE FORWARD CURRENT vs FOR WARD

FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT

VOLTAGE DROP

50

40

30

20

, RECOVERY TIMES (ns)

rr

10

t

0

200 600

300 400 500 700 800 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

125oC t

25oC t

125oC t

b

a

b

IEC = 20A, VCE = 390V

a

900 1000

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF

CURRENT

800

VCE = 390V

600

400

200

Qrr, REVERSE RECOVERY CHARGE (nC)

0

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

600 700 800

125oC, IEC = 20A

125oC, IEC = 10A

25oC, IEC = 20A

25oC, IEC = 10A

FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF

CURRENT

1000500200 300 400 900

HGTG20N60A4D, HGT4E20N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

-2

10

, NORMALIZED THERMAL RESPONSE

θJC

Z

-5

10

SINGLE PULSE

-4

10

-3

10

DUTY FACTOR, D = t1 / t

PEAK TJ = (PD X Z

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

t

1

P

2

X R

θJC

) + T

θJC

-2

D

t

C

-1

10

2

0

10

HGTG20N60A4D

DIODE TA49372

90%

10%

E

ON2

t

rI

t

d(ON)I

RG = 3Ω

L = 500µH

DUT

V

GE

E

V

CE

OFF

90%

+

V

= 390V

DD

-

I

CE

t

d(OFF)I

10%

t

fI

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS

HGTG20N60A4D, HGT4E20N60A4DS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insul ation damage by the elect rostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not di scharged through the device. With proper handling and applicati on procedures, however, IGBTs are currently being extensively used in production by numerous equi pment manuf acture rs in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:

1. Prior to assembly into a circ uit, all leads shoul d be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.

2. When devices are r emoved by hand from their carriers, the hand being us ed sho uld be g roun ded by a ny suitab le means - for example, with a metall ic wristband.

3. Tips of soldering irons shoul d be grounded.

4. Devices shoul d nev e r be inserted into or remov ed from circuits with power on.

5. Gate V oltage Rat in g - Ne v er e x ceed the ga te-v ol tage rating of V permanent damage to the oxide layer in t he gate region.

6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be a voided. These conditions can result in turn-on of the device due to voltage buildup on the input capaci tor due to leakage currents or pickup .

7. Gate Protection - Thes e devices do not have an int ernal monolithic Zener di ode from gate to emitter. If gate protectio n is required an e xternal Zen er is recommended .

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical dev ice (Figure 3) is presented as a guide for estimating devic e performance for a specific application. Other typical frequency vs collector current (I the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operati ng fr equency plot (Figure 3) of a typical device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a typical device and is bounded b y the maximum rated junction tempe rature.

f

is defined by f

MAX1

= 0.05/(t Deadtime (the denominat or ) has been arb itrari ly hel d to 10% of the on-state ti me for a 50% duty factor. Other definitions are possibl e. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency limiting condition for an appli cation other than T is important when controlli ng output ripple under a lightly loaded condition.

is defined by f

f

MAX2

allowable dissipati on (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of de vice switching and conduction los ses mu st not exceed P conduction losses (P P

C

E

ON2

shown in Figure 25. E

. A 50% duty factor was used (Figure 3) and the

D

) are approximated by

C

=(VCExICE)/2.

and E

are defined in the switching waveforms

OFF

is the integral of the

ON2

instantaneous power loss (I

is the integral of the instantaneous power loss

E

OFF

(I

CExVCE

calculation for E (I

CE

) during turn-off. All tail losses are included in the

; i.e., the collector current equals zero

OFF

= 0).

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are defined in Figure 25.

. t

JM

d(OFF)I

+ E

OFF

x VCE) during turn-on and

CE

ON2

). The

θJC

.

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UHC UltraFET VCX

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H5